AAAAAA
Results:
1-25
|
Results: 25
Authors:
Pathak, NN
Pattanaik, AK
Patra, RC
Arora, BM
Citation: Nn. Pathak et al., Mineral composition of antlers of three deer species reared in captivity, SMALL RUMIN, 42(1), 2001, pp. 61-65
Authors:
Gadkari, DB
Shashidharan, P
Lal, KB
Arora, BM
Citation: Db. Gadkari et al., Influence of crystal-melt interface shape on self-seeding and single crystalline quality, B MATER SCI, 24(5), 2001, pp. 475-482
Authors:
Ganguli, T
Vedvyas, M
Bhattacharya, P
Kukreja, LM
Ingale, A
Adhi, KP
Chandrashekharan, KS
Arora, BM
Rustagi, KC
Citation: T. Ganguli et al., Crystalline quality of ZnSe thin films grown on GaAs by pulsed laser deposition in He and Ar ambients, THIN SOL FI, 388(1-2), 2001, pp. 189-194
Authors:
Datta, S
Ghosh, S
Arora, BM
Citation: S. Datta et al., Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium-tin-oxide-coated glass electrode in soft contact mode, REV SCI INS, 72(1), 2001, pp. 177-183
Authors:
Siddiqui, AM
Rao, SVSN
Pathak, AP
Kulkarni, VN
Murthy, RK
Williams, E
Ila, D
Muntele, C
Chandrasekaran, KS
Arora, BM
Citation: Am. Siddiqui et al., Ion channeling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells, J APPL PHYS, 90(6), 2001, pp. 2824-2830
Authors:
Dixit, VK
Rodrigues, BV
Bhat, HL
Kumar, R
Venkataraghavan, R
Chandrasekaran, KS
Arora, BM
Citation: Vk. Dixit et al., Effect of lithium ion irradiation on the transport and optical properties of Bridgman grown n-type InSb single crystals, J APPL PHYS, 90(4), 2001, pp. 1750-1753
Authors:
Shashidharan, P
Gokhale, NA
Gadkari, DB
Lal, KB
Gokhale, MR
Arora, BM
Citation: P. Shashidharan et al., Effect of In content in InxGa1-xSb on breaking of ampoule during growth byvertical directional solidification, I J PA PHYS, 39(11), 2001, pp. 704-706
Authors:
Narsale, AM
Damle, AR
Ali, YP
Kanjilal, D
Arora, BM
Shah, AP
Lokhre, SG
Salvi, VP
Citation: Am. Narsale et al., Annealing effects on electrical characteristics of 100 MeV Si-28 implantation in GaAs, J MAT S-M E, 11(5), 2000, pp. 439-443
Authors:
Damle, AR
Narsale, AM
Ali, YP
Arora, BM
Gokhale, MR
Kanjilal, D
Salvi, VP
Citation: Ar. Damle et al., Near-infrared transmission characteristics of GaAs implanted with high energy (100 Mev) Si-28 ions, NUCL INST B, 168(2), 2000, pp. 229-236
Authors:
Datta, S
Arora, BM
Kumar, S
Citation: S. Datta et al., Bound exciton effect and carrier escape mechanisms in temperature-dependent surface photovoltage spectroscopy of a single quantum well, PHYS REV B, 62(20), 2000, pp. 13604-13611
Authors:
Sarkar, S
Chakraborty, P
Sanyal, MK
Caccavale, F
Arora, BM
Citation: S. Sarkar et al., Interfacial diffusion in a double quantum well structure, SURF INT AN, 29(10), 2000, pp. 659-662
Authors:
Sharma, TK
Arora, BM
Gokhale, MR
Rajgopalan, S
Citation: Tk. Sharma et al., Characterization of InGaP/GaAs heterointerfaces grown by metal organic vapour phase epitaxy, J CRYST GR, 221, 2000, pp. 509-514
Authors:
Venkataraghavan, R
Gokhale, MR
Shah, AP
Bhattacharya, A
Chandrasekaran, KS
Arora, BM
Citation: R. Venkataraghavan et al., Influence of compressive strain on the arsenic incorporation in MOVPE-grown InAsP/InP single quantum wells, J CRYST GR, 221, 2000, pp. 535-539
Authors:
Sharma, TK
Gokhale, MR
Arora, BM
Citation: Tk. Sharma et al., Long-wavelength photoluminescence from InGaP/GaAs heterointerfaces grown by metal organic vapour-phase epitaxy, J CRYST GR, 213(3-4), 2000, pp. 241-249
Authors:
Chandvankar, SS
Sharma, TK
Shah, AP
Chandrasekaran, KS
Arora, BM
Kapoor, AK
Verma, D
Sharma, BB
Citation: Ss. Chandvankar et al., Indium thallium phosphide: experiments versus predictions, J CRYST GR, 213(3-4), 2000, pp. 250-258
Authors:
Karar, N
Basu, S
Venkataraghavan, R
Arora, BM
Citation: N. Karar et al., Absorption and photoluminescence spectra of the diluted magnetic semiconductor Ga1-xFexSb, J APPL PHYS, 88(2), 2000, pp. 924-926
Authors:
Arora, BM
Chandrasekaran, KS
Gokhale, MR
Nair, G
Rao, GV
Amarendra, G
Viswanathan, B
Citation: Bm. Arora et al., Study of defects and strain relaxation in GaAs/InxGa1-xAs/GaAs heterostructures using photoluminescence, positron annihilation, and x-ray diffraction, J APPL PHYS, 87(12), 2000, pp. 8444-8450
Authors:
Gadkari, DB
Arora, BM
Citation: Db. Gadkari et Bm. Arora, Characterization of p and n-type bulk InSb crystals grown by vertical directional solidification technique, I J PA PHYS, 38(4), 2000, pp. 237-242
Authors:
Datta, S
Gokhale, MR
Shah, AP
Arora, BM
Kumar, S
Citation: S. Datta et al., Temperature dependence of surface photovoltage of bulk semiconductors and the effect of surface passivation, APPL PHYS L, 77(26), 2000, pp. 4383-4385
Authors:
Sharma, TK
Shah, AP
Gokhale, MR
Panchal, CJ
Arora, BM
Citation: Tk. Sharma et al., Short interval open tube diffusion of Zn in GaAs at low temperatures, SEMIC SCI T, 14(4), 1999, pp. 327-330
Authors:
Ghosh, S
Arora, BM
Kim, SJ
Noh, JH
Asahi, H
Citation: S. Ghosh et al., Spectroscopic study of Ga-In-P based self-organized lateral superlattices, SEMIC SCI T, 14(3), 1999, pp. 239-245
Authors:
Ali, YP
Narsale, AM
Arora, BM
Gokhale, MR
Kanjilal, D
Salvi, VP
Citation: Yp. Ali et al., Electrical characteristics of high energy Sn-120 implantation in p-type GaAs, NUCL INST B, 156(1-4), 1999, pp. 78-83
Authors:
Narsale, AM
Ali, YP
Arora, BM
Citation: Am. Narsale et al., Electrical behaviour of high energy Sn-120 implantation in n- and p-type GaAs, NUCL INST B, 148(1-4), 1999, pp. 421-425
Authors:
Ghosh, S
Arora, BM
Kim, SJ
Noh, JH
Asahi, H
Citation: S. Ghosh et al., Spectroscopic study of self-organized quantum dot like structures in Ga-In-P superlattices on (311) GaAs, J APPL PHYS, 85(5), 1999, pp. 2687-2693
Authors:
Gadkari, DB
Shashidharan, P
Lal, KB
Gokhale, NA
Shah, AP
Arora, BM
Citation: Db. Gadkari et al., Growth morphology and compositional analysis of InxGa1-xSb crystals-grown by vertical directional solidification technique, I J PA PHYS, 37(9), 1999, pp. 652-656
Risultati:
1-25
|