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Results: 1-11 |
Results: 11
CLINICAL AND NEUROPHYSIOLOGICAL PECULIARITIES OF MOTOR DISORDERS IN PATIENTS WITH POSTSTROKE EPILEPSY
Authors: GEKHT AB BURD GS SELIKHOVA MV BELYAKOV VV LEBEDEVA AV
Citation: Ab. Gekht et al., CLINICAL AND NEUROPHYSIOLOGICAL PECULIARITIES OF MOTOR DISORDERS IN PATIENTS WITH POSTSTROKE EPILEPSY, Zurnal nevropatologii i psihiatrii im. S.S. Korsakova, 98(7), 1998, pp. 4-8
METABOLIC THERAPY OF ISCHEMIC STROKE - AP PLICATION OF NOOTROPIL
Authors: GUSEV EI BURD GS GEKHT AB SKVORTSOVA VI SELIKHOVA MV PAVLOV NA BOLOTOV DA BELYAKOV VV VANICHKIN AV KONSTANTINOVA MV
Citation: Ei. Gusev et al., METABOLIC THERAPY OF ISCHEMIC STROKE - AP PLICATION OF NOOTROPIL, Zurnal nevropatologii i psihiatrii im. S.S. Korsakova, 97(10), 1997, pp. 24-28
THE EFFECT OF EMITTER JUNCTION BIAS ON THE LOW DOSE-RATE RADIATION RESPONSE OF BIPOLAR-DEVICES
Authors: PERSHENKOV VS MASLOV VB CHEREPKO SV SHVETZOVSHILOVSKY IN BELYAKOV VV SOGOYAN AV RUSANOVSKY VI ULIMOV VN EMELIANOV VV NASIBULLIN VS
Citation: Vs. Pershenkov et al., THE EFFECT OF EMITTER JUNCTION BIAS ON THE LOW DOSE-RATE RADIATION RESPONSE OF BIPOLAR-DEVICES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1840-1848
PROPOSED 2-LEVEL ACCEPTOR-DONOR (AD) CENTER AND THE NATURE OF SWITCHING TRAPS IN IRRADIATED MOS STRUCTURES
Authors: PERSHENKOV VS CHEREPKO SV SOGOYAN AV BELYAKOV VV ULIMOV VN ABRAMOV VV SHALNOV AV RUSANOVSKY VI
Citation: Vs. Pershenkov et al., PROPOSED 2-LEVEL ACCEPTOR-DONOR (AD) CENTER AND THE NATURE OF SWITCHING TRAPS IN IRRADIATED MOS STRUCTURES, IEEE transactions on nuclear science, 43(6), 1996, pp. 2579-2586
THE USE OF CONVERSION MODEL FOR CMOS IC PREDICTION IN-SPACE ENVIRONMENTS
Authors: SHVETZOVSHILOVSKY IN BELYAKOV VV CHEREPKO SV CHUMAKOV AI EMELYANOV VV PERSHENKOV VS POPOV MY ZEBREV GI
Citation: In. Shvetzovshilovsky et al., THE USE OF CONVERSION MODEL FOR CMOS IC PREDICTION IN-SPACE ENVIRONMENTS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3182-3188
REVERSIBLE POSITIVE CHARGE ANNEALING IN MOS-TRANSISTOR DURING VARIETYOF ELECTRICAL AND THERMAL-STRESSES
Authors: EMELIANOV VV ZEBREV GI ULIMOV VN USEINOV RG BELYAKOV VV PERSHENKOV VS
Citation: Vv. Emelianov et al., REVERSIBLE POSITIVE CHARGE ANNEALING IN MOS-TRANSISTOR DURING VARIETYOF ELECTRICAL AND THERMAL-STRESSES, IEEE transactions on nuclear science, 43(3), 1996, pp. 805-809
USE OF MOS STRUCTURES FOR THE INVESTIGATION OF LOW-DOSE-RATE EFFECTS IN BIPOLAR-TRANSISTORS
Authors: BELYAKOV VV PERSHENKOV VS SHALNOV AV SHVETZOVSHILOVSKY IN
Citation: Vv. Belyakov et al., USE OF MOS STRUCTURES FOR THE INVESTIGATION OF LOW-DOSE-RATE EFFECTS IN BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1660-1666
EFFECT OF ELECTRON TRAPS ON REVERSIBILITY OF ANNEALING
Authors: PERSHENKOV VS BELYAKOV VV CHEREPKO SV NIKIFOROV AY SOGOYAN AV ULIMOV VN EMELIANOV VV
Citation: Vs. Pershenkov et al., EFFECT OF ELECTRON TRAPS ON REVERSIBILITY OF ANNEALING, IEEE transactions on nuclear science, 42(6), 1995, pp. 1750-1757
EFFECT OF JUNCTION FRINGING FIELD ON RADIATION-INDUCED LEAKAGE CURRENT IN OXIDE ISOLATION STRUCTURES AND NONUNIFORM DAMAGE NEAR THE CHANNELEDGES IN MOSFETS
Authors: PERSHENKOV VS CHIROKOV MS BRETCHKO PT FASTENKO PO BAEV VK BELYAKOV VV
Citation: Vs. Pershenkov et al., EFFECT OF JUNCTION FRINGING FIELD ON RADIATION-INDUCED LEAKAGE CURRENT IN OXIDE ISOLATION STRUCTURES AND NONUNIFORM DAMAGE NEAR THE CHANNELEDGES IN MOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1895-1901
FAST SWITCHED-BIAS ANNEALING OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE AND ITS APPLICATION FOR TESTING OF RADIATION EFFECTS IN MOS STRUCTURES
Authors: PERSHENKOV VS BELYAKOV VV SHALNOV AV
Citation: Vs. Pershenkov et al., FAST SWITCHED-BIAS ANNEALING OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE AND ITS APPLICATION FOR TESTING OF RADIATION EFFECTS IN MOS STRUCTURES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2593-2599
3-POINT METHOD OF PREDICTION OF MOS DEVICE RESPONSE IN-SPACE ENVIRONMENTS
Authors: PERSHENKOV VS BELYAKOV VV CHEREPKO SV SHVETZOVSHILOVSKY IN
Citation: Vs. Pershenkov et al., 3-POINT METHOD OF PREDICTION OF MOS DEVICE RESPONSE IN-SPACE ENVIRONMENTS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1714-1720
Risultati: 1-11 |