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Results: 1-25 | 26-32
Results: 1-25/32
MULTIWAFER MOLECULAR-BEAM EPITAXY FOR HIGH-VOLUME PRODUCTION OF GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WAFERS/
Authors: BLOCK TR WOJTOWICZ M HAN AC OLSON SR OKI AK STREIT DC
Citation: Tr. Block et al., MULTIWAFER MOLECULAR-BEAM EPITAXY FOR HIGH-VOLUME PRODUCTION OF GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WAFERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1475-1478
INP-BASED HBT TECHNOLOGY FOR NEXT-GENERATION LIGHTWAVE COMMUNICATIONS
Authors: KOBAYASHI KW OKI AK GUTIERREZAITKEN A COWLES J TRAN LT BLOCK TR STREIT DC
Citation: Kw. Kobayashi et al., INP-BASED HBT TECHNOLOGY FOR NEXT-GENERATION LIGHTWAVE COMMUNICATIONS, Microwave journal, 41(6), 1998, pp. 22
A NOVEL SELF-OSCILLATING HEMT-HBT CASCODE VCO-MIXER USING AN ACTIVE TUNABLE INDUCTOR
Authors: KOBAYASHI KW OKI AK UMEMOTO DK BLOCK TR STREIT DC
Citation: Kw. Kobayashi et al., A NOVEL SELF-OSCILLATING HEMT-HBT CASCODE VCO-MIXER USING AN ACTIVE TUNABLE INDUCTOR, IEEE journal of solid-state circuits, 33(6), 1998, pp. 870-876
AN INP HEMT W-BAND AMPLIFIER WITH MONOLITHICALLY INTEGRATED HBT BIAS REGULATION
Authors: KOBAYASHI KW WANG H LAI R TRAN LT BLOCK TR LIU PH COWLES J CHEN YC HUANG TW OKI AK YEN HC STREIT DC
Citation: Kw. Kobayashi et al., AN INP HEMT W-BAND AMPLIFIER WITH MONOLITHICALLY INTEGRATED HBT BIAS REGULATION, IEEE microwave and guided wave letters, 7(8), 1997, pp. 222-224
AN ACTIVELY BALANCED GAAS HBT-SCHOTTKY MIXER FOR 3-V WIRELESS APPLICATIONS
Authors: KOBAYASHI KW TRAN LT OKI AK LAMMERT M BLOCK TR STREIT DC
Citation: Kw. Kobayashi et al., AN ACTIVELY BALANCED GAAS HBT-SCHOTTKY MIXER FOR 3-V WIRELESS APPLICATIONS, IEEE microwave and guided wave letters, 7(7), 1997, pp. 181-183
AN 18-22-GHZ DOWN-CONVERTER BASED ON GAAS ALGAAS HBT-SCHOTTKY DIODE INTEGRATED TECHNOLOGY/
Authors: KOBAYASHI KW TRAN LT OKI AK LAMMERT M BLOCK TR STREIT DC
Citation: Kw. Kobayashi et al., AN 18-22-GHZ DOWN-CONVERTER BASED ON GAAS ALGAAS HBT-SCHOTTKY DIODE INTEGRATED TECHNOLOGY/, IEEE microwave and guided wave letters, 7(4), 1997, pp. 106-108
THE VOLTAGE-DEPENDENT IP3 PERFORMANCE OF A 35-GHZ INALAS INGAAS-INP HBT AMPLIFIER/
Authors: KOBAYASHI KW OKI AK COWLES J TRAN LT GROSSMAN PC BLOCK TR STREIT DC
Citation: Kw. Kobayashi et al., THE VOLTAGE-DEPENDENT IP3 PERFORMANCE OF A 35-GHZ INALAS INGAAS-INP HBT AMPLIFIER/, IEEE microwave and guided wave letters, 7(3), 1997, pp. 66-68
A 50-MHZ-55-GHZ MULTIDECADE INP-BASED HBT DISTRIBUTED-AMPLIFIER
Authors: KOBAYASHI KW COWLES J TRAN LT GUTIERREZAITKEN A BLOCK TR OKI AK STREIT DC
Citation: Kw. Kobayashi et al., A 50-MHZ-55-GHZ MULTIDECADE INP-BASED HBT DISTRIBUTED-AMPLIFIER, IEEE microwave and guided wave letters, 7(10), 1997, pp. 353-355
RECIPROCAL SPACE MAPPING FOR SEMICONDUCTOR SUBSTRATES AND DEVICE HETEROSTRUCTURES
Authors: GOORSKY MS MATNEY KM MESHKINPOUR M STREIT DC BLOCK TR
Citation: Ms. Goorsky et al., RECIPROCAL SPACE MAPPING FOR SEMICONDUCTOR SUBSTRATES AND DEVICE HETEROSTRUCTURES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 257-266
MBE GROWTH OF QUATERNARY INGAALAS LAYERS IN INGAAS INALAS HBTS TO IMPROVE DEVICE PERFORMANCE/
Authors: BLOCK TR COWLES J TRAN L WOJTOWICZ M OKI AK STREIT DC
Citation: Tr. Block et al., MBE GROWTH OF QUATERNARY INGAALAS LAYERS IN INGAAS INALAS HBTS TO IMPROVE DEVICE PERFORMANCE/, Journal of crystal growth, 175, 1997, pp. 903-909
PHOTOLUMINESCENCE CHARACTERIZATION OF MBE GROWN ALGAAS INGAAS/GAAS PSEUDOMORPHIC HEMTS/
Authors: WOJTOWICZ M PASCUA D HAN AC BLOCK TR STREIT DC
Citation: M. Wojtowicz et al., PHOTOLUMINESCENCE CHARACTERIZATION OF MBE GROWN ALGAAS INGAAS/GAAS PSEUDOMORPHIC HEMTS/, Journal of crystal growth, 175, 1997, pp. 930-934
PHOTOREFLECTANCE STUDY OF PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: HAN AC WOJTOWICZ M PASCUA D BLOCK TR STREIT DC
Citation: Ac. Han et al., PHOTOREFLECTANCE STUDY OF PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of applied physics, 82(5), 1997, pp. 2607-2610
THE ROLE OF SUBSTRATE QUALITY ON MISFIT DISLOCATION FORMATION IN PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES
Authors: MESHKINPOUR M GOORSKY MS JENICHEN B STREIT DC BLOCK TR
Citation: M. Meshkinpour et al., THE ROLE OF SUBSTRATE QUALITY ON MISFIT DISLOCATION FORMATION IN PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, Journal of applied physics, 81(7), 1997, pp. 3124-3128
ALL-ACTIVE MONOLITHIC INP-BASED HBT VCO WITH TUNABLE HEMT INDUCTOR
Authors: KOBAYASHI KW TRAN LT LAI R BLOCK TR COWLES J LIU PH OKI AK STREIT DC
Citation: Kw. Kobayashi et al., ALL-ACTIVE MONOLITHIC INP-BASED HBT VCO WITH TUNABLE HEMT INDUCTOR, Electronics Letters, 33(16), 1997, pp. 1379-1380
COMMERCIAL HETEROJUNCTION BIPOLAR-TRANSISTOR PRODUCTION BY MOLECULAR-BEAM EPITAXY
Authors: STREIT DC OKI AK BLOCK TR LAMMERT MD HOPPE MM UMEMOTO DK WOJTOWICZ M
Citation: Dc. Streit et al., COMMERCIAL HETEROJUNCTION BIPOLAR-TRANSISTOR PRODUCTION BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2216-2220
MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INGAALAS-COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS WITH 140 GHZ - F-MAX AND 20 V BREAKDOWN
Authors: BLOCK TR WOJTOWICZ M COWLES J TRAN L OKI AK STREIT DC
Citation: Tr. Block et al., MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF INGAALAS-COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS WITH 140 GHZ - F-MAX AND 20 V BREAKDOWN, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2221-2224
A MONOLITHIC HEMT PASSIVE SWITCH WITH INTEGRATED HBT STANDARD LOGIC COMPATIBLE DRIVER FOR PHASED-ARRAY APPLICATIONS
Authors: KOBAYASHI KW OKI AK SJOGREN LB UMEMOTO DK BLOCK TR STREIT DC
Citation: Kw. Kobayashi et al., A MONOLITHIC HEMT PASSIVE SWITCH WITH INTEGRATED HBT STANDARD LOGIC COMPATIBLE DRIVER FOR PHASED-ARRAY APPLICATIONS, IEEE microwave and guided wave letters, 6(10), 1996, pp. 375-377
A MONOLITHIC HEMT-HBT DIRECT-COUPLED AMPLIFIER WITH ACTIVE INPUT-MATCHING
Authors: KOBAYASHI KW STREIT DC UMEMOTO DK BLOCK TR OKI AK
Citation: Kw. Kobayashi et al., A MONOLITHIC HEMT-HBT DIRECT-COUPLED AMPLIFIER WITH ACTIVE INPUT-MATCHING, IEEE microwave and guided wave letters, 6(1), 1996, pp. 55-57
EXTENDING THE BANDWIDTH PERFORMANCE OF HETEROJUNCTION BIPOLAR TRANSISTOR-BASED DISTRIBUTED-AMPLIFIERS
Authors: KOBAYASHI KW TRAN LT COWLES JC BLOCK TR OKI AK STREIT DC
Citation: Kw. Kobayashi et al., EXTENDING THE BANDWIDTH PERFORMANCE OF HETEROJUNCTION BIPOLAR TRANSISTOR-BASED DISTRIBUTED-AMPLIFIERS, IEEE transactions on microwave theory and techniques, 44(5), 1996, pp. 739-748
A NOVEL MONOLITHIC HEMT LNA INTEGRATING HBT-TUNABLE ACTIVE-FEEDBACK LINEARIZATION BY SELECTIVE MBE
Authors: KOBAYASHI KW STREIT DC OKI AK UMEMOTO DK BLOCK TR
Citation: Kw. Kobayashi et al., A NOVEL MONOLITHIC HEMT LNA INTEGRATING HBT-TUNABLE ACTIVE-FEEDBACK LINEARIZATION BY SELECTIVE MBE, IEEE transactions on microwave theory and techniques, 44(12), 1996, pp. 2384-2391
A MONOLITHICALLY INTEGRATED HEMT-HBT LOW-NOISE HIGH LINEARITY VARIABLE GAIN AMPLIFIER
Authors: KOBAYASHI KW UMEMOTO DK BLOCK TR OKI AK STREIT DC
Citation: Kw. Kobayashi et al., A MONOLITHICALLY INTEGRATED HEMT-HBT LOW-NOISE HIGH LINEARITY VARIABLE GAIN AMPLIFIER, IEEE journal of solid-state circuits, 31(5), 1996, pp. 714-718
LOW PHASE NOISE MILLIMETER-WAVE FREQUENCY SOURCES USING INP-BASED HBTMMIC TECHNOLOGY
Authors: WANG H CHANG KW TRAN LT COWLES JC BLOCK TR LIN EW DOW GS OKI AK STREIT DC ALLEN BR
Citation: H. Wang et al., LOW PHASE NOISE MILLIMETER-WAVE FREQUENCY SOURCES USING INP-BASED HBTMMIC TECHNOLOGY, IEEE journal of solid-state circuits, 31(10), 1996, pp. 1419-1425
GAAS AND INP SELECTIVE MOLECULAR-BEAM EPITAXY
Authors: STREIT DC BLOCK TR HAN AC WOJTOWICZ M UMEMOTO DK KOBAYASHI K OKI AK LIU PH LAI R NG GI
Citation: Dc. Streit et al., GAAS AND INP SELECTIVE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 771-773
GRADED-CHANNEL INGAAS-INALAS-INP HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: STREIT DC BLOCK TR WOJTOWICZ M PASCUA D LAI R NG GI LIU PH TAN KL
Citation: Dc. Streit et al., GRADED-CHANNEL INGAAS-INALAS-INP HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 774-776
A NOVEL MONOLITHIC LNA INTEGRATING A COMMON-SOURCE HEMT WITH AN HBT DARLINGTON AMPLIFIER
Authors: KOBAYASHI KW UMEMOTO DK BLOCK TR STREIT DC
Citation: Kw. Kobayashi et al., A NOVEL MONOLITHIC LNA INTEGRATING A COMMON-SOURCE HEMT WITH AN HBT DARLINGTON AMPLIFIER, IEEE microwave and guided wave letters, 5(12), 1995, pp. 442-444
Risultati: 1-25 | 26-32