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Results: 1-20 |
Results: 20
FABRICATION OF SIGE QUANTUM DEVICES BY ELECTRON-BEAM-INDUCED DAMAGE
Authors: RYAN JM BROERS AN PAUL DJ PEPPER M WHALL TE FERNANDEZ JM JOYCE BA
Citation: Jm. Ryan et al., FABRICATION OF SIGE QUANTUM DEVICES BY ELECTRON-BEAM-INDUCED DAMAGE, Superlattices and microstructures, 21(1), 1997, pp. 29-36
NEGATIVE PMMA AS A HIGH-RESOLUTION RESIST - THE LIMITS AND POSSIBILITIES
Authors: HOOLE ACF WELLAND ME BROERS AN
Citation: Acf. Hoole et al., NEGATIVE PMMA AS A HIGH-RESOLUTION RESIST - THE LIMITS AND POSSIBILITIES, Semiconductor science and technology, 12(9), 1997, pp. 1166-1170
ELECTRON-BEAM-INDUCED DAMAGE OF SILICON-GERMANIUM
Authors: PAUL DJ RYAN JM PEPPER M BROERS AN WHALL TE FERNANDEZ JM JOYCE BA
Citation: Dj. Paul et al., ELECTRON-BEAM-INDUCED DAMAGE OF SILICON-GERMANIUM, Microelectronic engineering, 35(1-4), 1997, pp. 59-62
INVESTIGATIONS OF ELECTRON-BEAM AND OPTICAL INDUCED DAMAGE IN HIGH-MOBILITY SIGE HETEROSTRUCTURES
Authors: PAUL DJ RYAN JH KELLY PV CREAN GM FERNANDEZ JM PEPPER M BROERS AN JOYCE BA
Citation: Dj. Paul et al., INVESTIGATIONS OF ELECTRON-BEAM AND OPTICAL INDUCED DAMAGE IN HIGH-MOBILITY SIGE HETEROSTRUCTURES, Solid-state electronics, 41(10), 1997, pp. 1509-1513
ELECTRON-BEAM-INDUCED DAMAGE OF SILICON-GERMANIUM
Authors: PAUL DJ RYAN JM PEPPER M BROERS AN WHALL TE FERNANDEZ JM JOYCE BA
Citation: Dj. Paul et al., ELECTRON-BEAM-INDUCED DAMAGE OF SILICON-GERMANIUM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3834-3838
ELECTRON-BEAM LITHOGRAPHY - RESOLUTION LIMITS
Authors: BROERS AN HOOLE ACF RYAN JM
Citation: An. Broers et al., ELECTRON-BEAM LITHOGRAPHY - RESOLUTION LIMITS, Microelectronic engineering, 32(1-4), 1996, pp. 131-142
THE DEPENDENCE OF NANOSTRUCTURE ETCH RATES ON FEATURE SIZE
Authors: ZACHARIASSE JMF BROERS AN
Citation: Jmf. Zachariasse et An. Broers, THE DEPENDENCE OF NANOSTRUCTURE ETCH RATES ON FEATURE SIZE, Microelectronic engineering, 30(1-4), 1996, pp. 349-352
A NOVEL TECHNIQUE FOR THE FABRICATION OF SUB-20NM METALLIC WIRES
Authors: HOOLE ACF BROERS AN
Citation: Acf. Hoole et An. Broers, A NOVEL TECHNIQUE FOR THE FABRICATION OF SUB-20NM METALLIC WIRES, Microelectronic engineering, 30(1-4), 1996, pp. 467-470
A STUDY OF THE EFFECT OF ULTRASONIC AGITATION DURING DEVELOPMENT OF POLY(METHYLMETHACRYLATE) FOR ULTRAHIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY
Authors: RYAN JM HOOLE ACF BROERS AN
Citation: Jm. Ryan et al., A STUDY OF THE EFFECT OF ULTRASONIC AGITATION DURING DEVELOPMENT OF POLY(METHYLMETHACRYLATE) FOR ULTRAHIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3035-3039
ELECTRON-BEAM DAMAGED HIGH-T-C JUNCTIONS - STABILITY, REPRODUCIBILITYAND SCALING LAWS
Authors: PAUZA AJ MOORE DF CAMPBELL AM BROERS AN CHAR K
Citation: Aj. Pauza et al., ELECTRON-BEAM DAMAGED HIGH-T-C JUNCTIONS - STABILITY, REPRODUCIBILITYAND SCALING LAWS, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 3410-3413
FABRICATION LIMITS OF ELECTRON-BEAM LITHOGRAPHY AND OF UV, X-RAY AND ION-BEAM LITHOGRAPHIES
Authors: BROERS AN
Citation: An. Broers, FABRICATION LIMITS OF ELECTRON-BEAM LITHOGRAPHY AND OF UV, X-RAY AND ION-BEAM LITHOGRAPHIES, Philosophical transactions-Royal Society of London. Physical sciences and engineering, 353(1703), 1995, pp. 291-311
ADAPTIVE FINITE-ELEMENT MESH GENERATION PROGRAM FOR ELECTRON-GUN SIMULATION
Authors: XIA S BROERS AN
Citation: S. Xia et An. Broers, ADAPTIVE FINITE-ELEMENT MESH GENERATION PROGRAM FOR ELECTRON-GUN SIMULATION, International journal of numerical modelling, 8(2), 1995, pp. 109-125
CHARACTERIZATION OF ELECTRON-BEAM-INDUCED MODIFICATION OF THERMALLY GROWN SIO2
Authors: BARNES JR HOOLE ACF MURRELL MP WELLAND ME BROERS AN BOURGOIN JP BIEBUYCK H JOHNSON MB MICHEL B
Citation: Jr. Barnes et al., CHARACTERIZATION OF ELECTRON-BEAM-INDUCED MODIFICATION OF THERMALLY GROWN SIO2, Applied physics letters, 67(11), 1995, pp. 1538-1540
REALIZATION OF LIMITED-AREA CATHODES AND THEIR PERFORMANCE IN AN ELECTRON-OPTICAL COLUMN
Authors: MALONEY CE NAKAMURA H BROERS AN XIA S PETERS L
Citation: Ce. Maloney et al., REALIZATION OF LIMITED-AREA CATHODES AND THEIR PERFORMANCE IN AN ELECTRON-OPTICAL COLUMN, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 26-31
JOSEPHSON-JUNCTIONS IN YBA2CU3O7-DELTA BY ELECTRON-BEAM IRRADIATION
Authors: PAUZA AJ CAMPBELL AM MOORE DF SOMEKH RE BROERS AN
Citation: Aj. Pauza et al., JOSEPHSON-JUNCTIONS IN YBA2CU3O7-DELTA BY ELECTRON-BEAM IRRADIATION, Physica. B, Condensed matter, 194, 1994, pp. 119-120
TOLERANCE ON ALIGNMENT ERROR IN GHOST PROXIMITY EFFECT CORRECTION
Authors: MORITZUMI K BROERS AN
Citation: K. Moritzumi et An. Broers, TOLERANCE ON ALIGNMENT ERROR IN GHOST PROXIMITY EFFECT CORRECTION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2114-2120
DIRECTLY PATTERNED LOW-VOLTAGE PLANAR TUNGSTEN LATERAL FIELD-EMISSIONSTRUCTURES
Authors: HOOLE ACF MOORE DF BROERS AN
Citation: Acf. Hoole et al., DIRECTLY PATTERNED LOW-VOLTAGE PLANAR TUNGSTEN LATERAL FIELD-EMISSIONSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2574-2578
SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/
Authors: VANHOVE M ZOU G DERAEDT W JANSEN P JONCKHEERE R VANROSSUM M HOOLE ACF ALLEE DR BROERS AN CROZAT P JIN Y ANIEL F ADDE R
Citation: M. Vanhove et al., SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1203-1208
INTEGRATED NANOFABRICATION WITH THE SCANNING ELECTRON-MICROSCOPE AND SCANNING TUNNELING MICROSCOPE
Authors: ROSOLEN GC HOOLE ACF WELLAND ME BROERS AN
Citation: Gc. Rosolen et al., INTEGRATED NANOFABRICATION WITH THE SCANNING ELECTRON-MICROSCOPE AND SCANNING TUNNELING MICROSCOPE, Applied physics letters, 63(17), 1993, pp. 2435-2437
IMPROVED ELECTRON-BEAM PATTERN WRITING IN SIO2 WITH THE USE OF A SAMPLE HEATING STAGE
Authors: PAN XD BROERS AN
Citation: Xd. Pan et An. Broers, IMPROVED ELECTRON-BEAM PATTERN WRITING IN SIO2 WITH THE USE OF A SAMPLE HEATING STAGE, Applied physics letters, 63(10), 1993, pp. 1441-1442
Risultati: 1-20 |