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Results: 1-25 | 26-32
Results: 1-25/32
Electronic energy loss Of H-3(+) ion clusters in SiO2 films - art. no. 022904
Authors: Behar, M Dias, JF Grande, PL dos Santos, JRR Arista, NR
Citation: M. Behar et al., Electronic energy loss Of H-3(+) ion clusters in SiO2 films - art. no. 022904, PHYS REV A, 6402(2), 2001, pp. 2904
Range parameters of O-18 implanted into Si and SiO2
Authors: de Souza, JP Behar, M Dias, JF dos Santos, JHR
Citation: Jp. De Souza et al., Range parameters of O-18 implanted into Si and SiO2, NUCL INST B, 175, 2001, pp. 46-50
Random energy loss and straggling study of Li into Si
Authors: da Silva, DL Azevedo, GD Behar, M Dias, JF Grande, PL
Citation: Dl. Da Silva et al., Random energy loss and straggling study of Li into Si, NUCL INST B, 175, 2001, pp. 98-101
Helium implantation induced metal gettering in silicon at half of the projected ion range
Authors: Peeva, A Fichtner, PFP Behar, M Koegler, R Skorupa, W
Citation: A. Peeva et al., Helium implantation induced metal gettering in silicon at half of the projected ion range, NUCL INST B, 175, 2001, pp. 176-181
The effects of implantation temperature on He bubble formation in silicon
Authors: da Silva, DL Fichtner, PFP Peeva, A Behar, M Koegler, R Skorupa, W
Citation: Dl. Da Silva et al., The effects of implantation temperature on He bubble formation in silicon, NUCL INST B, 175, 2001, pp. 335-339
Modification of stainless steel and aluminium with pulsed energetic ion beams in the millisecond regime
Authors: Heyden, D Muller, D Wolf, GK Amaral, L Behar, M
Citation: D. Heyden et al., Modification of stainless steel and aluminium with pulsed energetic ion beams in the millisecond regime, NUCL INST B, 175, 2001, pp. 403-409
Ion Beam Modification of Materials - Proceedings of the Twelfth International Conference on Ion Beam Modification of Materials - Canela, Rio Grande Do Sul, Brazil, 3-8 September 2000
Authors: Behar, M Zawislak, FC
Citation: M. Behar et Fc. Zawislak, Ion Beam Modification of Materials - Proceedings of the Twelfth International Conference on Ion Beam Modification of Materials - Canela, Rio Grande Do Sul, Brazil, 3-8 September 2000, NUCL INST B, 175, 2001, pp. VII-VIII
Angular dependence for the energy loss of channeled He ions near the Si < 110 > and < 111 > directions
Authors: Azevedo, GD Dias, JF Behar, M Grande, PL dos Santos, JHR
Citation: Gd. Azevedo et al., Angular dependence for the energy loss of channeled He ions near the Si < 110 > and < 111 > directions, NUCL INST B, 174(4), 2001, pp. 407-413
Range study of Eu implanted into Si channeling directions: Evidence for the Z(1) effect - art. no. 064101
Authors: Azevedo, GD Behar, M Grande, PL Borges, I
Citation: Gd. Azevedo et al., Range study of Eu implanted into Si channeling directions: Evidence for the Z(1) effect - art. no. 064101, PHYS REV B, 6305(6), 2001, pp. 4101
Giant Barkas effect observed for light ions channeling in Si
Authors: Azevedo, GD Grande, PL Behar, M Dias, JF Schiwietz, G
Citation: Gd. Azevedo et al., Giant Barkas effect observed for light ions channeling in Si, PHYS REV L, 86(8), 2001, pp. 1482-1485
Diffusion of Pd in alpha-Ti studied by means of Rutherford back-scatteringand channelling techniques
Authors: Behar, M Soares, MRF Dyment, F Perez, RA Balart, S
Citation: M. Behar et al., Diffusion of Pd in alpha-Ti studied by means of Rutherford back-scatteringand channelling techniques, PHIL MAG A, 80(6), 2000, pp. 1319-1334
Argon ion-irradiation effects at the interface of Cu/Fe bilayers
Authors: Desimoni, J Echeverria, G Punte, G Mercader, RC Behar, M Freeland, JW Walker, JC
Citation: J. Desimoni et al., Argon ion-irradiation effects at the interface of Cu/Fe bilayers, J PHYS-COND, 12(22), 2000, pp. 4713-4721
Al and Ag diffusion study in alpha-titanium
Authors: Araujo, LL Behar, M
Citation: Ll. Araujo et M. Behar, Al and Ag diffusion study in alpha-titanium, APPL PHYS A, 71(2), 2000, pp. 169-174
Charge equilibration of energetic He ions in the Si < 100 > channel
Authors: Azevedo, GD Kaschny, JRA Behar, M Grande, PL Klatt, C Kalbitzer, S
Citation: Gd. Azevedo et al., Charge equilibration of energetic He ions in the Si < 100 > channel, NUCL INST B, 168(3), 2000, pp. 321-328
Ion-induced redistribution of palladium in polymethyl methacrylate
Authors: Fink, D Muller, M Nakao, Y Hirata, K Kobayashi, Y Behar, M Kaschny, JR Vacik, J Hnatowicz, V
Citation: D. Fink et al., Ion-induced redistribution of palladium in polymethyl methacrylate, NUCL INST B, 166, 2000, pp. 610-614
Diffusion and solubility of Au implanted into the AZ1350 photoresist
Authors: Soares, MRF Kaschny, JRA dos Santos, JHR Amaral, L Behar, M Fink, D
Citation: Mrf. Soares et al., Diffusion and solubility of Au implanted into the AZ1350 photoresist, NUCL INST B, 166, 2000, pp. 615-620
Charge equilibration of He ions in the Si < 100 > channel
Authors: Azevedo, CD Kaschny, JRA Behar, M Grande, PL Klatt, C Kalbitzer, S
Citation: Cd. Azevedo et al., Charge equilibration of He ions in the Si < 100 > channel, NUCL INST B, 161, 2000, pp. 96-100
Angular dependence of the electronic stopping power of Li ions channeled around the Si < 1 0 0 > direction
Authors: Azevedo, GD Dias, JF dos Santos, JHR Grande, PL Behar, M Klatt, C Kalbitzer, S
Citation: Gd. Azevedo et al., Angular dependence of the electronic stopping power of Li ions channeled around the Si < 1 0 0 > direction, NUCL INST B, 161, 2000, pp. 145-149
Molecular H-2 and H-3 energy loss measurements along the Si < 111 > direction
Authors: Behar, M Grande, PL Azevedo, GD Alves, E da Silva, MF Soares, JC
Citation: M. Behar et al., Molecular H-2 and H-3 energy loss measurements along the Si < 111 > direction, NUCL INST B, 161, 2000, pp. 168-171
He-induced cavity formation in silicon upon high-temperature implantation
Authors: Fichtner, PFP Peeva, A Behar, M Azevedo, GD Maltez, RL Koegler, R Skorupa, W
Citation: Pfp. Fichtner et al., He-induced cavity formation in silicon upon high-temperature implantation, NUCL INST B, 161, 2000, pp. 1038-1042
Evidence for interstitial-type defects in the R-p/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure
Authors: Peeva, A Kogler, R Werner, P de Mattos, AAD Fichtner, PFP Behar, M Skorupa, W
Citation: A. Peeva et al., Evidence for interstitial-type defects in the R-p/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure, NUCL INST B, 161, 2000, pp. 1090-1094
Analysis of Ag+-exchanged glass films in the near-surface region
Authors: Horowitz, F Pereira, MB Behar, M
Citation: F. Horowitz et al., Analysis of Ag+-exchanged glass films in the near-surface region, OPT COMMUN, 182(1-3), 2000, pp. 129-133
Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon
Authors: Fichtner, PFP Behar, M Kaschny, JR Peeva, A Koegler, R Skorupa, W
Citation: Pfp. Fichtner et al., Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon, APPL PHYS L, 77(7), 2000, pp. 972-974
Phase transformations in the Fe-N system induced by the concomitant use ofion irradiation and temperature
Authors: Moreira, EC Amaral, L Behar, M
Citation: Ec. Moreira et al., Phase transformations in the Fe-N system induced by the concomitant use ofion irradiation and temperature, PHIL MAG A, 79(7), 1999, pp. 1721-1738
Depth profiles and amorphization behavior under channeling conditions for low energy Bi ions implanted into Si crystals
Authors: Azevedo, GD Martini, JC Behar, M Grande, PL
Citation: Gd. Azevedo et al., Depth profiles and amorphization behavior under channeling conditions for low energy Bi ions implanted into Si crystals, NUCL INST B, 149(3), 1999, pp. 301-311
Risultati: 1-25 | 26-32