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Results:
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Results: 23
Authors:
Le Bihan, F
Carvou, E
Fortin, B
Rogel, R
Salaun, AC
Bonnaud, O
Citation: F. Le Bihan et al., Realization of polycrystalline silicon magnetic sensors, SENS ACTU-A, 88(2), 2001, pp. 133-138
Authors:
Pichon, L
Mourgues, K
Raoult, F
Mohammed-Brahim, T
Kis-Sion, K
Briand, D
Bonnaud, O
Citation: L. Pichon et al., Thin film transistors fabricated by in situ doped unhydrogenated polysilicon films obtained by solid phase crystallization, SEMIC SCI T, 16(11), 2001, pp. 918-924
Authors:
Viana, CE
da Silva, ANR
Morimoto, NI
Bonnaud, O
Citation: Ce. Viana et al., Analysis of SiO2 thin films deposited by PECVD using an oxygen-TEOS-argon mixture, BRAZ J PHYS, 31(2), 2001, pp. 299-303
Authors:
Helen, Y
Dassow, R
Nerding, M
Mourgues, K
Raoult, F
Kohler, JR
Mohammed-Brahim, T
Rogel, R
Bonnaud, O
Werner, JH
Strunk, HP
Citation: Y. Helen et al., High mobility thin film transistors by Nd : YVO4-laser crystallization, THIN SOL FI, 383(1-2), 2001, pp. 143-146
Authors:
Mercha, A
Pichon, L
Carin, R
Mourgues, K
Bonnaud, O
Citation: A. Mercha et al., Grain boundary trap passivation in polysilicon thin film transistor investigated by low frequency noise, THIN SOL FI, 383(1-2), 2001, pp. 303-306
Authors:
Toutah, H
Llibre, JF
Tala-Ighil, B
Mohammed-Brahim, T
Helen, Y
Gautier, G
Bonnaud, O
Citation: H. Toutah et al., Improved stability of large area excimer laser crystallised polysilicon thin film transistors under DC and AC operating, MICROEL REL, 41(9-10), 2001, pp. 1325-1329
Authors:
Rey-Tauriac, Y
Taurin, M
Bonnaud, O
Citation: Y. Rey-tauriac et al., Wafer level accelerated test for ionic contamination control on VDMOS transistors in bipolar/CMOS/DMOS, MICROEL REL, 41(9-10), 2001, pp. 1331-1334
Authors:
Gagnard, X
Rey-Tauriac, Y
Bonnaud, O
Citation: X. Gagnard et al., Polysilicon oxide quality optimization at wafer level of a Bipolar/CMOS/DMOS technology, MICROEL REL, 41(9-10), 2001, pp. 1335-1340
Authors:
Rey-Tauriac, Y
Taurin, M
Bonnaud, O
Citation: Y. Rey-tauriac et al., High reliability power VDMOS transistors in bipolar/CMOS/DMOS technology, MICROEL REL, 41(9-10), 2001, pp. 1707-1712
Authors:
Mercha, A
Vandamme, LKJ
Pichon, L
Carin, R
Bonnaud, O
Citation: A. Mercha et al., Current crowding and 1/f noise in polycrystalline silicon thin film transistors, J APPL PHYS, 90(8), 2001, pp. 4019-4026
Authors:
Outaleb, N
Pinel, J
Drissi, M
Bonnaud, O
Citation: N. Outaleb et al., Microwave planar antenna with RF-sputtered indium tin oxide films, MICROW OPT, 24(1), 2000, pp. 3-7
Authors:
Dassow, R
Kohler, JR
Helen, Y
Mourgues, K
Bonnaud, O
Mohammed-Brahim, T
Werner, JH
Citation: R. Dassow et al., Laser crystallization of silicon for high-performance thin-film transistors, SEMIC SCI T, 15(10), 2000, pp. L31-L34
Authors:
Toutah, H
Llibre, JF
Tala-Ighil, B
Mohammed-Brahim, T
Mourgues, K
Helen, Y
Raoult, F
Bonnaud, O
Citation: H. Toutah et al., Stability of polysilicon thin film transistors under switch operating, MICROEL REL, 40(8-10), 2000, pp. 1573-1577
Authors:
Viana, CE
Morimoto, NI
Bonnaud, O
Citation: Ce. Viana et al., Annealing effects in the PECVD SiO2 thin films deposited using TEOS, Ar and O-2 mixture, MICROEL REL, 40(4-5), 2000, pp. 613-616
Authors:
da Silva, ANR
Morimoto, NI
Bonnaud, O
Citation: Anr. Da Silva et al., Tetraethylorthosilicate SiO2 films deposited at a low temperature, MICROEL REL, 40(4-5), 2000, pp. 621-624
Authors:
Mercha, A
Rhayem, J
Pichon, L
Valenza, M
Routoure, JM
Carin, R
Bonnaud, O
Rigaud, D
Citation: A. Mercha et al., Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors, MICROEL REL, 40(11), 2000, pp. 1891-1896
Authors:
Guillet, D
Sarret, M
Haji, L
Rogel, R
Bonnaud, O
Citation: D. Guillet et al., Crystallization of amorphous silicon-germanium films deposited by low pressure chemical vapor deposition, J NON-CRYST, 266, 2000, pp. 689-693
Authors:
Rogel, R
Sarret, M
Mohammed-Brahim, T
Bonnaud, O
Kleider, JP
Citation: R. Rogel et al., High quality unhydrogenated low-pressure chemical vapor deposited polycrystalline silicon, J NON-CRYST, 266, 2000, pp. 141-145
Authors:
Pichon, L
Mercha, A
Carin, R
Bonnaud, O
Mohammed-Brahim, T
Helen, Y
Rogel, R
Citation: L. Pichon et al., Analysis of the activation energy of the subthreshold current in laser- and solid-phase-crystallized polycrystalline silicon thin-film transistors, APPL PHYS L, 77(4), 2000, pp. 576-578
Authors:
Tala-Ighil, B
Rahal, A
Mourgues, K
Toutah, A
Pichon, L
Mohammed-Brahim, T
Raoult, F
Bonnaud, O
Citation: B. Tala-ighil et al., State creation induced by gate bias stress in unhydrogenated polysilicon TFTs, THIN SOL FI, 337(1-2), 1999, pp. 101-104
Authors:
Helen, Y
Mourgues, K
Raoult, F
Mohammed-Brahim, T
Bonnaud, O
Rogel, R
Prochasson, S
Boher, P
Zahorski, D
Citation: Y. Helen et al., Single shot excimer laser crystallization and LPCVD silicon TFTs, THIN SOL FI, 337(1-2), 1999, pp. 133-136
Authors:
Gagnard, X
Taurin, M
Bonnaud, O
Citation: X. Gagnard et al., New rapid method for lifetime determination of gate oxide validated with Bipolar/CMOS/DMOS technology, MICROEL REL, 39(6-7), 1999, pp. 759-763
Authors:
Ogier-Monnier, K
Boivin, P
Bonnaud, O
Citation: K. Ogier-monnier et al., Reliability improvement of EEPROM by using WSi2 polycide gate, MICROEL REL, 39(6-7), 1999, pp. 897-901
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