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Results:
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Results: 25
Authors:
FOURRE H
PESANT JC
SCHULER O
CAPPY A
Citation: H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION (VOL 15, PG 1008, 1997)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 255-255
Authors:
CORDIER Y
BOLLAERT S
DIPERSIO J
FERRE D
TRUDEL S
DRUELLE Y
CAPPY A
Citation: Y. Cordier et al., MBE GROWN INALAS INGAAS LATTICE-MISMATCHED LAYERS FOR HEMT APPLICATION ON GAAS SUBSTRATE/, Applied surface science, 123, 1998, pp. 734-737
Authors:
MATEOS J
GONZALEZ T
PARDO D
TADYSZAK P
DANNEVILLE F
CAPPY A
Citation: J. Mateos et al., NOISE-ANALYSIS OF 0.1 MU-M GATE MESFETS AND HEMTS, Solid-state electronics, 42(1), 1998, pp. 79-85
Authors:
DAMBRINE G
BELQUIN JM
DANNEVILLE F
CAPPY A
Citation: G. Dambrine et al., A NEW EXTRINSIC EQUIVALENT-CIRCUIT OF HEMTS INCLUDING NOISE FOR MILLIMETER-WAVE CIRCUIT-DESIGN, IEEE transactions on microwave theory and techniques, 46(9), 1998, pp. 1231-1236
Authors:
MATEOS J
PARDO D
GONZALEZ T
TADYSZAK P
DANNEVILLE F
CAPPY A
Citation: J. Mateos et al., INFLUENCE OF AL MOLE FRACTION ON THE NOISE PERFORMANCE OF GAAS ALXGA1-XAS, HEMTS/, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2081-2083
Authors:
HAPPY H
BOLLAERT S
FOURE H
CAPPY A
Citation: H. Happy et al., NUMERICAL-ANALYSIS OF DEVICE PERFORMANCE OF METAMORPHIC INYAL1-YAS INXGA1-XAS LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.6) HEMTS ON GAAS SUBSTRATE/, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2089-2095
Authors:
DANNEVILLE F
DAMBRINE G
CAPPY A
Citation: F. Danneville et al., NOISE MODELING IN MESFET AND HEMT MIXERS USING A UNIFORM NOISY LINE MODEL, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2207-2212
Authors:
ANDO Y
CAPPY A
Citation: Y. Ando et A. Cappy, PROPOSAL OF LOW-NOISE AMPLIFIER UTILIZING RESONANT-TUNNELING TRANSISTORS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 31-35
Authors:
FOURRE H
PESANT JC
SCHULER O
CAPPY A
Citation: H. Fourre et al., ISOLATION OF A LATTICE-MISMATCHED ALINAS GAINAS LAYER ON INP USING ION-IMPLANTATION FOR HIGH-ENERGY MOBILITY TRANSISTOR REALIZATION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1008-1010
Authors:
ANDO Y
CAPPY A
MARUHASHI K
ONDA K
MIYAMOTO H
KUZUHARA M
Citation: Y. Ando et al., NOISE PARAMETER MODELING FOR INP-BASED PSEUDOMORPHIC HEMTS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1367-1374
Authors:
MATEOS J
GONZALEZ T
PARDO D
TADYSZAK P
DANNEVILLE F
CAPPY A
Citation: J. Mateos et al., NOISE AND TRANSIT-TIME IN UNGATED FET STRUCTURES, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2128-2135
Authors:
WILLIAMS DF
BELQUIN JM
SPISSER A
CAPPY A
DAMBRINE G
Citation: Df. Williams et al., CHARACTERIZATION OF COPLANAR WAVE-GUIDE ON EPITAXIAL LAYERS, Electronics Letters, 33(17), 1997, pp. 1468-1469
Authors:
DAMBRINE G
BELQUIN JM
DANNEVILLE F
CAPPY A
Citation: G. Dambrine et al., ON THE VALIDITY OF A NEW EXTRINSIC EQUIVALENT-CIRCUIT INCLUDING NOISEOF HEMTS REQUIRED FOR MILLIMETER-WAVE CIRCUIT-DESIGN, Annales des telecommunications, 52(3-4), 1997, pp. 140-144
Authors:
FOURRE H
DIETTE F
CAPPY A
Citation: H. Fourre et al., SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION (VOL 14, PG 3400, 1996)/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3603-3603
Authors:
FOURRE H
DIETTE F
CAPPY A
Citation: H. Fourre et al., SELECTIVE WET ETCHING OF LATTICE-MATCHED INGAAS INALAS ON INP AND METAMORPHIC INGAAS/INALAS ON GAAS USING SUCCINIC ACID HYDROGEN-PEROXIDE SOLUTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3400-3402
Authors:
MATEOS J
GONZALEZ T
PARDO D
TADYSZAK P
DANNEVILLE F
CAPPY A
Citation: J. Mateos et al., NUMERICAL AND EXPERIMENTAL-ANALYSIS OF THE STATIC CHARACTERISTICS ANDNOISE IN UNGATED RECESSED MESFET STRUCTURES, Solid-state electronics, 39(11), 1996, pp. 1629-1636
Authors:
TADYSZAK P
DANNEVILLE F
CAPPY A
REGGIANI L
VARANI L
ROTA L
Citation: P. Tadyszak et al., MONTE-CARLO CALCULATIONS OF HOT-CARRIER NOISE UNDER DEGENERATE CONDITIONS, Applied physics letters, 69(10), 1996, pp. 1450-1452
Authors:
DANNEVILLE F
DAMBRINE G
HAPPY H
TADYSZAK P
CAPPY A
Citation: F. Danneville et al., INFLUENCE OF THE GATE LEAKAGE CURRENT ON THE NOISE PERFORMANCE OF MESFETS AND MODFETS, Solid-state electronics, 38(5), 1995, pp. 1081-1087
Authors:
WIN P
DRUELLE Y
CORDIER Y
ADAM D
FAVRE J
CAPPY A
Citation: P. Win et al., HIGH-PERFORMANCE IN0.3GA0.7AS IN0.29AL0.71AS/GAAS METAMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR/, JPN J A P 1, 33(6A), 1994, pp. 3343-3347
Authors:
DANNEVILLE F
HAPPY H
DAMBRINE G
BELQUIN JM
CAPPY A
Citation: F. Danneville et al., MICROSCOPIC NOISE MODELING AND MACROSCOPIC NOISE MODELS - HOW GOOD A CONNECTION, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 779-786
Authors:
BOLLAERT S
LEGRIS P
DELOS E
CAPPY A
DEBRAY P
BLANCHET J
Citation: S. Bollaert et al., DESIGN, FABRICATION, AND CHARACTERIZATION OF STRIPED CHANNEL HEMTS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1716-1724
Authors:
ANDO YJ
CAPPY A
Citation: Yj. Ando et A. Cappy, ENSEMBLE MONTE-CARLO SIMULATION FOR ELECTRON-TRANSPORT IN QUANTUM-WIRE STRUCTURES, Journal of applied physics, 74(6), 1993, pp. 3983-3992
Authors:
DAMBRINE G
HAPPY H
DANNEVILLE F
CAPPY A
Citation: G. Dambrine et al., A NEW METHOD FOR ON WAFER NOISE MEASUREMENT, IEEE transactions on microwave theory and techniques, 41(3), 1993, pp. 375-381
Authors:
WIN P
DRUELLE Y
LEGRY P
LEPILLIET S
CAPPY A
CORDIER Y
FAVRE J
Citation: P. Win et al., MICROWAVE PERFORMANCE OF 0.4-MU-M GATE METAMORPHIC IN0.29AL0.71AS IN0.3GA0.7AS HEMT ON GAAS SUBSTRATE, Electronics Letters, 29(2), 1993, pp. 169-170
Authors:
ZIMMERMANN J
CAPPY A
Citation: J. Zimmermann et A. Cappy, HOT-ELECTRON NOISE IN III-V HETEROJUNCTION FIELD-EFFECT TRANSISTORS, Semiconductor science and technology, 7(3B), 1992, pp. 468-473
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