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Results: 1-25 | 26-39
Results: 1-25/39
IMPROVEMENT OF RELIABILITY OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH N2O NITRIDED GATE OXIDE AND N2O POLYSILICON GATE REOXIDATION
Authors: LAI CS CHAO TS LEI TF LEE CL HUANG TY CHANG CY
Citation: Cs. Lai et al., IMPROVEMENT OF RELIABILITY OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH N2O NITRIDED GATE OXIDE AND N2O POLYSILICON GATE REOXIDATION, JPN J A P 1, 37(10), 1998, pp. 5507-5509
IMPROVING RADIATION HARDNESS OF EEPROM FLASH CELL BY N2O ANNEALING/
Authors: HUANG TY JONG FC CHAO TS LIN HC LEU LY YOUNG K LIN CH CHIU KY
Citation: Ty. Huang et al., IMPROVING RADIATION HARDNESS OF EEPROM FLASH CELL BY N2O ANNEALING/, IEEE electron device letters, 19(7), 1998, pp. 256-258
EVALUATION OF PLASMA CHARGING DAMAGE IN ULTRATHIN GATE OXIDES
Authors: LIN HC CHEN CC CHIEN CH HSEIN SK WANG MF CHAO TS HUANG TY CHANG CY
Citation: Hc. Lin et al., EVALUATION OF PLASMA CHARGING DAMAGE IN ULTRATHIN GATE OXIDES, IEEE electron device letters, 19(3), 1998, pp. 68-70
A NOVEL SELF-ALIGNED T-SHAPED GATE PROCESS FOR DEEP-SUBMICRON SI MOSFETS FABRICATION
Authors: LIN HC LIN R WU WF YANG RP TSAI MS CHAO TS HUANG TY
Citation: Hc. Lin et al., A NOVEL SELF-ALIGNED T-SHAPED GATE PROCESS FOR DEEP-SUBMICRON SI MOSFETS FABRICATION, IEEE electron device letters, 19(1), 1998, pp. 26-28
CHARACTERIZATION OF POLYSILICON OXIDES THERMALLY GROWN AND DEPOSITED ON THE POLISHED POLYSILICON FILMS
Authors: LEI TF CHENG JY SHIAU SY CHAO TS LAI CS
Citation: Tf. Lei et al., CHARACTERIZATION OF POLYSILICON OXIDES THERMALLY GROWN AND DEPOSITED ON THE POLISHED POLYSILICON FILMS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 912-917
EFFECTS OF N2O-ANNEALED SACRIFICIAL OXIDE ON THE SHORT-CHANNEL EFFECTS OF NMOSFETS
Authors: JONG FC HUANG TY CHAO TS LIN HC WANG MF CHANG CY
Citation: Fc. Jong et al., EFFECTS OF N2O-ANNEALED SACRIFICIAL OXIDE ON THE SHORT-CHANNEL EFFECTS OF NMOSFETS, Electronics Letters, 34(4), 1998, pp. 404-406
SUPPRESSION OF BORON PENETRATION IN P(-B DIFFUSION SOURCE() POLYSILICON GATE USING SI)
Authors: CHAO TS KUO CP LEI TF CHEN TP HUANG TY CHANG CY
Citation: Ts. Chao et al., SUPPRESSION OF BORON PENETRATION IN P(-B DIFFUSION SOURCE() POLYSILICON GATE USING SI), Electronics Letters, 34(1), 1998, pp. 128-129
A STUDY ON THE RADIATION HARDNESS OF FLASH CELL WITH HORN-SHAPED FLOATING-GATE
Authors: HUANG TY JONG FC CHAO TS LIN HC LEU LY YOUNG K LIN CH CHIU KY
Citation: Ty. Huang et al., A STUDY ON THE RADIATION HARDNESS OF FLASH CELL WITH HORN-SHAPED FLOATING-GATE, JPN J A P 1, 36(9A), 1997, pp. 5459-5463
EFFECTS OF FLOATING-GATE DOPING CONCENTRATION ON FLASH CELL PERFORMANCE
Authors: HUANG TY JONG FC LIN HC CHAO TS LEU LY YOUNG K LIN CH CHIU KY
Citation: Ty. Huang et al., EFFECTS OF FLOATING-GATE DOPING CONCENTRATION ON FLASH CELL PERFORMANCE, JPN J A P 1, 36(8), 1997, pp. 5063-5067
A NOVEL SHALLOW TRENCH ISOLATION TECHNIQUE
Authors: CHENG JY LEI TF CHAO TS
Citation: Jy. Cheng et al., A NOVEL SHALLOW TRENCH ISOLATION TECHNIQUE, JPN J A P 1, 36(3B), 1997, pp. 1319-1324
SUPPRESSION OF BORON PENETRATION IN P-POLY-SI GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR USING NITROGEN IMPLANTATION()
Authors: CHAO TS CHIEN CH HAO CP LIAW MC CHU CH CHANG CY LEI TF SUN WT HSU CH
Citation: Ts. Chao et al., SUPPRESSION OF BORON PENETRATION IN P-POLY-SI GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR USING NITROGEN IMPLANTATION(), JPN J A P 1, 36(3B), 1997, pp. 1364-1367
IMPROVED FLASH CELL PERFORMANCE BY N2O ANNEALING OF INTERPOLY OXIDE
Authors: JONG FC HUANG TY CHAO TS LIN HC LEU LY YOUNG K LIN CH CHIU KY
Citation: Fc. Jong et al., IMPROVED FLASH CELL PERFORMANCE BY N2O ANNEALING OF INTERPOLY OXIDE, IEEE electron device letters, 18(7), 1997, pp. 343-345
IMPROVEMENT OF POLYSILICON OXIDE BY GROWING ON POLISHED POLYSILICON FILM
Authors: LEI TF CHENG JY SHIAU SY CHAO TS LAI CS
Citation: Tf. Lei et al., IMPROVEMENT OF POLYSILICON OXIDE BY GROWING ON POLISHED POLYSILICON FILM, IEEE electron device letters, 18(6), 1997, pp. 270-271
SUPPRESSION OF BORON PENETRATION BY USING INDUCTIVE-COUPLING-NITROGEN-PLASMA IN STACKED AMORPHOUS POLYSILICON GATE STRUCTURE/
Authors: YANG WL LIN CJ CHAO TS LIU DG LEI TF
Citation: Wl. Yang et al., SUPPRESSION OF BORON PENETRATION BY USING INDUCTIVE-COUPLING-NITROGEN-PLASMA IN STACKED AMORPHOUS POLYSILICON GATE STRUCTURE/, Electronics Letters, 33(13), 1997, pp. 1139-1140
A NOVEL PLANARIZATION OF OXIDE-FILLED SHALLOW-TRENCH ISOLATION
Authors: CHENG JY LEI TF CHAO TS YEN DLW LIN CJ
Citation: Jy. Cheng et al., A NOVEL PLANARIZATION OF OXIDE-FILLED SHALLOW-TRENCH ISOLATION, Journal of the Electrochemical Society, 144(1), 1997, pp. 315-320
INDUCTIVE-COUPLING-NITROGEN-PLASMA PROCESS FOR SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED POLYCRYSTALLINE SILICON GATE()
Authors: CHAO TS CHU CH
Citation: Ts. Chao et Ch. Chu, INDUCTIVE-COUPLING-NITROGEN-PLASMA PROCESS FOR SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED POLYCRYSTALLINE SILICON GATE(), Applied physics letters, 70(1), 1997, pp. 55-56
SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED POLY-SI GATE()
Authors: CHAO TS CHU CH WANG CF HO KJ LEI TF LEE CL
Citation: Ts. Chao et al., SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED POLY-SI GATE(), JPN J A P 1, 35(12A), 1996, pp. 6003-6007
NITRIDIZATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
Authors: LIN YH LAI CS LEE CL LEI TF CHAO TS
Citation: Yh. Lin et al., NITRIDIZATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1161-1165
MECHANISM OF NITROGEN COIMPLANT FOR SUPPRESSING BORON PENETRATION IN P(-POLYCRYSTALLINE SILICON GATE OF P METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR())
Authors: CHAO TS LIAW MC CHU CH CHANG CY CHIEN CH HAO CP LEI TF
Citation: Ts. Chao et al., MECHANISM OF NITROGEN COIMPLANT FOR SUPPRESSING BORON PENETRATION IN P(-POLYCRYSTALLINE SILICON GATE OF P METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR()), Applied physics letters, 69(12), 1996, pp. 1781-1782
ELLIPSOMETRIC MEASUREMENTS AND ITS ALIGNMENT - USING THE INTENSITY RATIO TECHNIQUE
Authors: CHAO YF WEI CS LEE WC LIN SC CHAO TS
Citation: Yf. Chao et al., ELLIPSOMETRIC MEASUREMENTS AND ITS ALIGNMENT - USING THE INTENSITY RATIO TECHNIQUE, JPN J A P 1, 34(9A), 1995, pp. 5016-5019
EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATES
Authors: CHENG HC UENG SY WANG PW KANG TK CHAO TS
Citation: Hc. Cheng et al., EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATES, JPN J A P 1, 34(9A), 1995, pp. 5037-5042
IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHEDSILICON SUBSTRATES
Authors: UENG SY WANG PW KANG TK CHAO TS CHEN WH DAI BT CHENG HC
Citation: Sy. Ueng et al., IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHEDSILICON SUBSTRATES, JPN J A P 1, 34(5A), 1995, pp. 2266-2271
FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O
Authors: CHAO TS CHEN WH LEI TF
Citation: Ts. Chao et al., FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O, JPN J A P 1, 34(5A), 1995, pp. 2370-2373
SUPPRESSION OF BORON PENETRATION IN PMOS BY USING BRIDE GETTERING EFFECT IN POLY-SI GATE
Authors: LIN YH LEE CL LEI TF CHAO TS
Citation: Yh. Lin et al., SUPPRESSION OF BORON PENETRATION IN PMOS BY USING BRIDE GETTERING EFFECT IN POLY-SI GATE, JPN J A P 1, 34(2B), 1995, pp. 752-756
NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
Authors: LIN YH LAI SC LEE CL LEI TF CHAO TS
Citation: Yh. Lin et al., NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS, IEEE electron device letters, 16(6), 1995, pp. 248-249
Risultati: 1-25 | 26-39