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Results: 1-25/26
Authors:
PARK SH
CHIN TP
LIU QZ
FU SL
NAKAMURA T
YU PKL
ASBECK PM
Citation: Sh. Park et al., SUBMICRON SELF-ALIGNED HBTS BY SELECTIVE EMITTER REGROWTH, IEEE electron device letters, 19(4), 1998, pp. 118-120
Authors:
GOPAL V
KVAM EP
CHIN TP
WOODALL JM
Citation: V. Gopal et al., EVIDENCE FOR MISFIT DISLOCATION-RELATED CARRIER ACCUMULATION AT THE INAS GAP HETEROINTERFACE/, Applied physics letters, 72(18), 1998, pp. 2319-2321
Authors:
LEON R
LOBO C
CHIN TP
WOODALL JM
FAFARD S
RUVIMOV S
LILIENTALWEBER Z
KALCEFF MAS
Citation: R. Leon et al., SELF-FORMING INAS GAP QUANTUM DOTS BY DIRECT ISLAND GROWTH/, Applied physics letters, 72(11), 1998, pp. 1356-1358
Authors:
ALAWADHI H
VOGELGESANG R
RAMDAS AK
CHIN TP
WOODALL JM
Citation: H. Alawadhi et al., INDIRECT TRANSITIONS, FREE AND IMPURITY-BOUND EXCITONS IN GALLIUM-PHOSPHIDE - A REVISIT WITH MODULATION AND PHOTOLUMINESCENCE SPECTROSCOPY, Journal of applied physics, 82(9), 1997, pp. 4331-4337
Authors:
SCHOEN KJ
HARMON ES
WOODALL JM
CHIN TP
Citation: Kj. Schoen et al., HIGH-VOLTAGE GAINP GABS DUAL-MATERIAL SCHOTTKY RECTIFIERS/, Applied physics letters, 71(4), 1997, pp. 518-520
Authors:
CHEN EH
CHIN TP
WOODALL JM
LUNDSTROM MS
Citation: Eh. Chen et al., ELECTRICAL CHARACTERISTICS OF NEARLY RELAXED INAS GAP HETEROJUNCTIONS/, Applied physics letters, 70(12), 1997, pp. 1551-1553
Authors:
CHEN WL
CHIN TP
WOODALL JM
HADDAD GI
Citation: Wl. Chen et al., INP INGAAS SINGLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY USING A PHOSPHORUS VALVED CRACKER/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2739-2741
Authors:
CHIN TP
CHANG JCP
WOODALL JM
CHEN WL
HADDAD GI
Citation: Tp. Chin et al., INGAP GAAS/INGAP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY SOLID-SOURCE MOLECULAR-BEAM EPITAXY WITH A VALVED PHOSPHORUS CRACKER/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2225-2228
Authors:
TAGARE MV
CHIN TP
WOODALL JM
Citation: Mv. Tagare et al., HEAVY BE DOPING OF GAP AND INXGA1-XP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2325-2326
Authors:
BRINER BG
FEENSTRA RM
CHIN TP
WOODALL JM
Citation: Bg. Briner et al., GROWTH AND TRANSPORT-PROPERTIES OF THIN BI FILMS ON INP(110), Semiconductor science and technology, 11(11), 1996, pp. 1575-1581
Authors:
BRINER BG
FEENSTRA RM
CHIN TP
WOODALL JM
Citation: Bg. Briner et al., LOCAL TRANSPORT-PROPERTIES OF THIN BISMUTH-FILMS STUDIED BY SCANNING TUNNELING POTENTIOMETRY, Physical review. B, Condensed matter, 54(8), 1996, pp. 5283-5286
Authors:
CHANG JCP
CHIN TP
WOODALL JM
Citation: Jcp. Chang et al., INCOHERENT INTERFACE OF INAS GROWN DIRECTLY ON GAP(001), Applied physics letters, 69(7), 1996, pp. 981-983
Authors:
CHANG JCP
CHIN TP
WOODALL JM
Citation: Jcp. Chang et al., INCOHERENT INTERFACE OF INAS GROWN DIRECTLY ON GAP(001) (VOL 69, PG 981, 1996), Applied physics letters, 69(17), 1996, pp. 2609-2609
Authors:
CHEN EH
MCINTURFF DT
CHIN TP
MELLOCH MR
WOODALL JM
Citation: Eh. Chen et al., USE OF ANNEALED LOW-TEMPERATURE-GROWN GAAS AS A SELECTIVE PHOTOETCH-STOP LAYER, Applied physics letters, 68(12), 1996, pp. 1678-1680
Authors:
CHIN TP
CHANG JCP
WOODALL JM
CHEN WL
HADDAD GI
PARKS C
RAMDAS AK
Citation: Tp. Chin et al., OPERATION AND DEVICE APPLICATIONS OF A VALVED-PHOSPHORUS CRACKER IN SOLID-SOURCE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 750-753
Authors:
YAN D
POLLAK FH
CHIN TP
WOODALL JM
Citation: D. Yan et al., IN-SITU STUDY OF FERMI-LEVEL PINNING ON N-TYPE AND P-TYPE GAAS(001) GROWN BY MOLECULAR-BEAM EPITAXY USING PHOTOREFLECTANCE, Physical review. B, Condensed matter, 52(7), 1995, pp. 4674-4676
Authors:
HSIN YM
HO MC
MEI XB
LIAO HH
CHIN TP
TU CW
ASBECK PM
Citation: Ym. Hsin et al., PSEUDOMORPHIC ALINPINP HETEROJUNCTION BIPOLAR-TRANSISTORS, Electronics Letters, 31(2), 1995, pp. 141-142
Authors:
FU SL
CHIN TP
HO MC
TU CW
ASBECK PM
Citation: Sl. Fu et al., IMPACT IONIZATION COEFFICIENTS IN (100) GAINP, Applied physics letters, 66(25), 1995, pp. 3507-3509
Authors:
PATKAR MP
CHIN TP
WOODALL JM
LUNDSTROM MS
MELLOCH MR
Citation: Mp. Patkar et al., VERY-LOW RESISTANCE NONALLOYED OHMIC CONTACTS USING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GAAS, Applied physics letters, 66(11), 1995, pp. 1412-1414
Authors:
FU SL
CHIN TP
ZHU B
TU CW
LAU SS
ASBECK PM
Citation: Sl. Fu et al., ELECTRICAL-PROPERTIES OF HE-IMPLANTED GAINP( ION), Journal of electronic materials, 23(4), 1994, pp. 403-407
Authors:
TU CW
LIANG BW
CHIN TP
Citation: Cw. Tu et al., HEAVILY CARBON-DOPED P-TYPE GAAS AND IN0.53GA0.47AS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY USING CARBON TETRABROMIDE, Journal of crystal growth, 136(1-4), 1994, pp. 191-194
Authors:
CHIN TP
HOU HQ
TU CW
CHANG JCP
OTSUKA N
Citation: Tp. Chin et al., INGAAS INP AND INASP/INP QUANTUM-WELL STRUCTURES ON GAAS (100) WITH ALINEARLY GRADED INGAP BUFFER LAYER GROWN BY GAS-SOURCE MOLECULAR-BEAMEPITAXY/, Applied physics letters, 64(15), 1994, pp. 2001-2003
PLANARIZED GROWTH OF ALGAAS GAAS HETEROSTRUCTURES ON PATTERNED SUBSTRATES BY MOLECULAR-BEAM EPITAXY/
Authors:
HO MC
CHIN TP
TU CW
ASBECK PM
Citation: Mc. Ho et al., PLANARIZED GROWTH OF ALGAAS GAAS HETEROSTRUCTURES ON PATTERNED SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 74(3), 1993, pp. 2128-2130
Authors:
CHANG JCP
CHIN TP
TU CW
KAVANAGH KL
Citation: Jcp. Chang et al., MULTIPLE DISLOCATION LOOPS IN LINEARLY GRADED INXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.53) ON GAAS AND INXGA1-XP ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.32) ON GAP, Applied physics letters, 63(4), 1993, pp. 500-502
Authors:
CHIN TP
TU CW
Citation: Tp. Chin et Cw. Tu, HETEROEPITAXIAL GROWTH OF INP IN0.52GA0.48AS STRUCTURES ON GAAS (100)BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Applied physics letters, 62(21), 1993, pp. 2708-2710