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Results:
1-15
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Results: 15
Authors:
SONG JI
HONG BWP
PALMSTROM CJ
VANDERGAAG BP
CHOUGH KB
Citation: Ji. Song et al., ULTRA-HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 15(3), 1994, pp. 94-96
Authors:
SONG JI
CANEAU C
CHOUGH KB
HONG WP
Citation: Ji. Song et al., GAINP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH HIGH F(T), F(MAX), AND BREAKDOWN VOLTAGE/, IEEE electron device letters, 15(1), 1994, pp. 10-12
Authors:
CHOUGH KB
CANEAU C
HONG WP
SONG JI
Citation: Kb. Chough et al., AL0.25IN0.75P AL0.48IN0.52AS/GA0.35IN0.65AS GRADED CHANNEL PSEUDOMORPHIC HEMTS WITH HIGH CHANNEL-BREAKDOWN VOLTAGE/, IEEE electron device letters, 15(1), 1994, pp. 33-35
Authors:
HONG BWP
SONG JI
PALMSTROM CJ
VANDERGAAG B
CHOUGH KB
HAYES JR
Citation: Bwp. Hong et al., DC, RF, AND NOISE CHARACTERISTICS OF CARBON-DOPED BASE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 41(1), 1994, pp. 19-25
Authors:
SONG JI
CANEAU C
HONG WP
CHOUGH KB
Citation: Ji. Song et al., POTENTIALLY HIGH-PERFORMANCE CARBON-DOPED GALNP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COMPOSITIONAL BASE GRADINGS/, Electronics Letters, 30(7), 1994, pp. 605-606
Authors:
CHOUGH KB
HONG BWP
CANEAU C
SONG JI
JEON KI
HONG SC
LEE K
Citation: Kb. Chough et al., GRADED PSEUDOMORPHIC CHANNEL ALLNP ALLNAS GALNAS HEMTS WITH HIGH CHANNEL BREAKDOWN VOLTAGE/, Electronics Letters, 30(5), 1994, pp. 453-454
Authors:
SONG JI
HONG WP
PALMSTROM CJ
VANDERGAAG BP
CHOUGH KB
Citation: Ji. Song et al., MILLIMETER-WAVE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A SUBPICOSECOND EXTRINSIC DELAY-TIME/, Electronics Letters, 30(5), 1994, pp. 456-457
Authors:
CHOUGH KB
CANEAU C
HONG WP
SONG JI
Citation: Kb. Chough et al., INVESTIGATION OF ALXGAYIN1-X-YP AS A SCHOTTKY LAYER OF ALINAS GAINAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Applied physics letters, 64(2), 1994, pp. 211-213
Authors:
CHOUGH KB
HONG WP
CANEAU C
SONG JI
HAYES JR
Citation: Kb. Chough et al., IIIA-2 OMCVD GROWN ALINAS GAINAS HEMTS WITH ALGAINP SCHOTTKY LAYER/, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2111-2111
Authors:
SONG JI
PALMSTROM CJ
VANDERGAAG BP
HONG WP
HAYES JR
CHOUGH KB
Citation: Ji. Song et al., HIGH-PERFORMANCE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY/, Electronics Letters, 29(8), 1993, pp. 666-667
Authors:
SONG JI
HONG WP
BHAT R
CHOUGH KB
HAYES JR
SUGENG B
WEI CJ
HWANG JCM
Citation: Ji. Song et al., MICROWAVE-POWER INP INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(8), 1993, pp. 724-725
Authors:
SONG JI
CANEAU C
HONG WP
CHOUGH KB
Citation: Ji. Song et al., CHARACTERIZATION OF GALNP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH DIFFERENT COLLECTOR DESIGNS/, Electronics Letters, 29(21), 1993, pp. 1881-1883
Authors:
SONG JI
HONG WP
PALMSTROM CJ
HAYES JR
CHOUGH KB
VANDERGAAG BP
Citation: Ji. Song et al., MICROWAVE CHARACTERISTICS OF A CARBON-DOPED BASE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY CHEMICAL BEAM EPITAXY/, Electronics Letters, 29(21), 1993, pp. 1893-1894
Authors:
CHOUGH KB
HONG WP
FLOREZ L
SONG JI
Citation: Kb. Chough et al., EFFECT OF STRAIN ON MICROWAVE NOISE CHARACTERISTICS IN IN0.52AL0.48ASINXGA1-XAS ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.80) HEMTS/, Electronics Letters, 29(15), 1993, pp. 1338-1340
Authors:
CHOUGH KB
HONG WP
LIN PSD
CANEAU C
SONG JI
Citation: Kb. Chough et al., MOCVD-GROWN INALAS INGAAS HEMTS WITH FT = 200 GHZ/, Electronics Letters, 29(15), 1993, pp. 1361-1363
Risultati:
1-15
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