Authors:
ALLAM R
KOLANOWSKI C
DEJAEGER JC
CROSNIER Y
Citation: R. Allam et al., AN ACCURATE DUAL-GATE HFET NONLINEAR MODEL FOR MILLIMETER-WAVE MMIC DESIGN, INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 8(4), 1998, pp. 315-320
Citation: X. Hue et al., GATE RECESSING OPTIMIZATION OF GAAS AL0.22GA0.78AS HETEROJUNCTION FIELD-EFFECT TRANSISTOR USING CITRIC-ACID HYDROGEN-PEROXIDE AMMONIUM HYDROXIDE FOR POWER APPLICATIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2675-2679
Authors:
TRASSAERT S
BOUDART B
PIOTROWICZ S
CROSNIER Y
Citation: S. Trassaert et al., BROMINE METHANOL WET CHEMICAL ETCHING OF VIA HOLES FOR INP MICROWAVE DEVICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 561-564
Authors:
ZAKNOUNE M
SCHULER O
MOLLOT F
THERON D
CROSNIER Y
Citation: M. Zaknoune et al., NONSELECTIVE WET CHEMICAL ETCHING OF GAAS AND ALGAINP FOR DEVICE APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 223-226
Authors:
PIOTROWICZ S
GAQUIERE C
BONTE B
BOURCIER E
THERON D
WALLART X
CROSNIER Y
Citation: S. Piotrowicz et al., BEST COMBINATION BETWEEN POWER-DENSITY, EFFICIENCY, AND GAIN AT V-BAND WITH AN INP-BASED PHEMT STRUCTURE, IEEE microwave and guided wave letters, 8(1), 1998, pp. 10-12
Authors:
ZAKNOUNE M
BONTE B
GAQUIERE C
CORDIER Y
DRUELLE Y
THERON D
CROSNIER Y
Citation: M. Zaknoune et al., INALAS INGAAS METAMORPHIC HEMT WITH HIGH-CURRENT DENSITY AND HIGH BREAKDOWN VOLTAGE/, IEEE electron device letters, 19(9), 1998, pp. 345-347
Authors:
BONTE B
GAQUIERE C
BOURCIER E
LEMEUR G
CROSNIER Y
Citation: B. Bonte et al., AN AUTOMATED-SYSTEM FOR MEASURING POWER DEVICES IN KA-BAND, IEEE transactions on microwave theory and techniques, 46(1), 1998, pp. 70-75
Authors:
GAQUIERE C
BOURCIER E
PIOTROWICZ S
CROSNIER Y
Citation: C. Gaquiere et al., ANALYSES OF THE OPTIMAL POWER LOAD IMPEDANCES MEASURED IN MMIC AND HYBRID CONFIGURATION IN THE K-ALPHA BAND, IEEE microwave and guided wave letters, 7(10), 1997, pp. 356-358
Authors:
LEPERCQ P
CARRU JC
MEHRI F
CROSNIER Y
BOURZGUI N
FRANCOIS I
DEBOECK J
BORGHS G
Citation: P. Lepercq et al., MICROWAVE MEASUREMENTS ON YBACUO THIN-FILMS AND REALIZATION OF MICROWAVE SUPERCONDUCTING DEVICES, Journal de physique. IV, 6(C3), 1996, pp. 391-396
Authors:
GAQUIERE C
BONTE B
THERON D
CROSNIER Y
FAVRE J
Citation: C. Gaquiere et al., ANALYSIS OF THE SOURCE INDUCTANCE EFFECT ON THE POWER PERFORMANCE OF HIGH DEVELOPMENT HEMTS IN THE KA-BAND, IEEE microwave and guided wave letters, 5(8), 1995, pp. 243-245
Citation: R. Allam et al., AN HEMT WITH AN INTEGRATED ON-DRAIN CAPACITOR AS BASIS OF AN HYBRID MIXER, IEEE microwave and guided wave letters, 5(3), 1995, pp. 76-78
Authors:
CHAUVEL D
CROSNIER Y
CARRU JC
CHAMBONNET D
BELOUET C
Citation: D. Chauvel et al., A 12-GHZ HIGH-TEMPERATURE SUPERCONDUCTING SEMICONDUCTOR OSCILLATOR, Microwave and optical technology letters, 9(5), 1995, pp. 235-237
Authors:
GAQUIERE C
BONTE B
THERON D
CROSNIER Y
ARSENEHENRI P
PACOU T
Citation: C. Gaquiere et al., BREAKDOWN ANALYSIS OF AN ASYMMETRICAL DOUBLE RECESSED POWER MESFETS, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 209-214
Authors:
BORGHS G
DEBOECK J
FRANCOIS I
CHAMBONNET D
BELOUET C
CROSNIER Y
CARRU JC
CHAUVEL D
ARNAUD L
BOUCHER H
VILLEGIER JC
NICOLETTI S
CORRERA L
JIMENEZ J
Citation: G. Borghs et al., A 12 GHZ OSCILLATOR BASED ON A GAAS HEMT INTEGRATED TO A HTS RESONATOR, Journal de physique. IV, 4(C6), 1994, pp. 189-194
Citation: R. Allam et al., LARGE-SIGNAL MODEL FOR ANALYSIS AND DESIGN OF HEMT GATE MIXER, IEEE microwave and guided wave letters, 4(12), 1994, pp. 405-407
Citation: C. Gaquiere et al., OPTIMIZATION OF A POWER PSEUDOMORPHIC DOUBLE-HETEROJUNCTION FET, Microwave and optical technology letters, 7(18), 1994, pp. 871-873
Citation: C. Kolanowski et al., DESIGN PROCEDURE OF A 30-GHZ HEMT HYBRID GATE MIXER, Microwave and optical technology letters, 7(17), 1994, pp. 809-810
Authors:
WESTPHALEN R
BOUDART B
THERON D
WALLART X
DRUELLE Y
CROSNIER Y
Citation: R. Westphalen et al., TEMPERATURE-MEASUREMENTS OF LT GAAS DIODES, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 78-81
Authors:
THERON D
BONTE B
GAQUIERE C
PLAYEZ E
CROSNIER Y
Citation: D. Theron et al., CHARACTERIZATION OF GAAS AND INGAAS DOUBLE-QUANTUM-WELL HETEROSTRUCTURE FETS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 1935-1941