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Results: 1-25 |
Results: 25

Authors: Petrone, A Giorgi, G Mesturino, CA Capizzi, M Cascino, I Nistico, L Osborn, J Di Mario, U Buzzetti, R
Citation: A. Petrone et al., Association of DRB104-DQB1*0301 haplotype and lack of association of two polymorphic sites at CTLA-4 gene with hashimoto's thyroiditis in an Italianpopulation, THYROID, 11(2), 2001, pp. 171-175

Authors: Bissiri, M Gaspari, V Baldassarri, G Ranalli, F Polimeni, A Capizzi, M Nucara, A Geddo, M Fischer, M Reinhardt, M Forchel, A
Citation: M. Bissiri et al., Effect of hydrogen on the electronic properties of GaAs1-yNy heterostructures, ACT PHY P A, 100(3), 2001, pp. 365-371

Authors: Baldassarri, G Ranalli, F Bissiri, M Gaspari, V Polimeni, A Capizzi, M Nucara, A Geddo, M Fischer, M Reinhardt, M Forchel, A
Citation: G. Baldassarri et al., Hydrogen tuning of (InGa)(AsN) optical properties, ACT PHY P A, 100(3), 2001, pp. 373-378

Authors: Bissiri, M Baldassarri, G Von H, GBH Capizzi, M Fomin, VM Gladilin, VN Devreese, JT
Citation: M. Bissiri et al., Polaron interaction in InAs/GaAs quantum dots and resonant photoluminescence, PHYS ST S-B, 224(3), 2001, pp. 639-642

Authors: Polimeni, A Baldassarri, G Bissiri, HVM Capizzi, M Fischer, M Reinhardt, M Forchel, A
Citation: A. Polimeni et al., Effect of hydrogen on the electronic properties of InxGa1-xAs1-yNy/GaAs quantum wells - art. no. 201304, PHYS REV B, 6320(20), 2001, pp. 1304

Authors: Polimeni, A Capizzi, M Geddo, M Fischer, M Reinhardt, M Forchel, A
Citation: A. Polimeni et al., Effect of nitrogen on the temperature dependence of the energy gap in InxGa1-xAs1-yNy/GaAs single quantum wells - art. no. 195320, PHYS REV B, 6319(19), 2001, pp. 5320

Authors: Bissiri, M Gaspari, V Polimeni, A von Hogersthal, GBH Capizzi, M Frova, A Fischer, M Reinhardt, M Forchel, A
Citation: M. Bissiri et al., High temperature photoluminescence efficiency and thermal stability of (InGa)(AsN)/GaAs quantum wells, APPL PHYS L, 79(16), 2001, pp. 2585-2587

Authors: Baldassarri, G Bissiri, M Polimeni, A Capizzi, M Fischer, M Reinhardt, M Forchel, A
Citation: G. Baldassarri et al., Hydrogen-induced band gap tuning of (InGa)(AsN)/GaAs single quantum wells, APPL PHYS L, 78(22), 2001, pp. 3472-3474

Authors: Galluppi, M Frova, A Capizzi, M Boscherini, F Frigeri, P Franchi, S Passaseo, A
Citation: M. Galluppi et al., Atomic equilibrium concentrations in (InGa)As quantum dots, APPL PHYS L, 78(20), 2001, pp. 3121-3123

Authors: Alessi, MG Fragano, F Patane, A Capizzi, M Runge, E Zimmermann, R
Citation: Mg. Alessi et al., Competition between radiative decay and energy relaxation of carriers in disordered InxGa1-xAs/GaAs quantum wells, PHYS REV B, 61(16), 2000, pp. 10985-10993

Authors: Bonapasta, AA Capizzi, M
Citation: Aa. Bonapasta et M. Capizzi, Structure, kinetics, and vibrational properties of complexes formed by hydrogen and gallium vacancies in GaAs: A theoretical study, PHYS REV B, 61(12), 2000, pp. 8180-8186

Authors: Timofeev, VB Larionov, AV Grassi-Alessi, M Capizzi, M Hvam, JM
Citation: Vb. Timofeev et al., Phase diagram of a two-dimensional liquid in GaAs/AlxGa1-xAs biased doublequantum wells, PHYS REV B, 61(12), 2000, pp. 8420-8424

Authors: Lupi, S Calvani, P Capizzi, M Maselli, P Giura, P Roy, P
Citation: S. Lupi et al., Infrared evidence for the coexistence of free and bound charges in Nd2-xCexCuO4 and Bi2Sr2CuO6, INT J MOD B, 14(29-31), 2000, pp. 3548-3554

Authors: Bissiri, M von Hogersthal, GBH Bhatti, AS Capizzi, M Frova, A Frigeri, P Franchi, S
Citation: M. Bissiri et al., Optical evidence of polaron interaction in InAs/GaAs quantum dots, PHYS REV B, 62(7), 2000, pp. 4642-4646

Authors: Lupi, S Calvani, P Capizzi, M Roy, P
Citation: S. Lupi et al., Evidence of two species of carriers from the far-infrared reflectivity of Bi2Sr2CuO6, PHYS REV B, 62(18), 2000, pp. 12418-12421

Authors: Polimeni, A Capizzi, M Geddo, M Fischer, M Reinhardt, M Forchel, A
Citation: A. Polimeni et al., Effect of temperature on the optical properties of (InGa)(AsN)/GaAs singlequantum wells, APPL PHYS L, 77(18), 2000, pp. 2870-2872

Authors: Giura, P Lupi, S Calvani, P Roy, P Capizzi, M Maselli, P Raimondi, V
Citation: P. Giura et al., Polaron softening with doping and temperature in high-T-c cuprates, PHYSICA B, 261, 1999, pp. 548-549

Authors: Lupi, S Giura, P Calvani, P Capizzi, M Roy, P Maselli, P Raimondi, V
Citation: S. Lupi et al., Polaron absorption and the insulator to metal transition in Na2-xCexCuO4-ycuprates, J SUPERCOND, 12(1), 1999, pp. 69-70

Authors: Bhatti, AS Alessi, MG Capizzi, M Frigeri, P Franchi, S
Citation: As. Bhatti et al., Optical spectroscopy of quasimonolayer InAs at the onset of quantum-dot nucleation, PHYS REV B, 60(4), 1999, pp. 2592-2598

Authors: Timofeev, VB Larionov, AV Alessi, MG Capizzi, M Frova, A Hvam, JM
Citation: Vb. Timofeev et al., Charged excitonic complexes in GaAs/Al0.35Ga0.65As p-i-n double quantum wells, PHYS REV B, 60(12), 1999, pp. 8897-8901

Authors: Sanguinetti, S Henini, M Alessi, MG Capizzi, M
Citation: S. Sanguinetti et al., Carrier thermal escape and retrapping in self-assembled quantum dots, PHYS REV B, 60(11), 1999, pp. 8276-8283

Authors: Bonapasta, AA Capizzi, M Giannozzi, P
Citation: Aa. Bonapasta et al., Hydrogen-induced states near the GaAs band edges, PHYS REV B, 59(7), 1999, pp. 4869-4880

Authors: Alessi, MG Capizzi, M Bhatti, AS Frova, A Martelli, F Frigeri, P Bosacchi, A Franchi, S
Citation: Mg. Alessi et al., Optical properties of InAs quantum dots: Common trends, PHYS REV B, 59(11), 1999, pp. 7620-7623

Authors: Bonapasta, AA Capizzi, M Giannozzi, P
Citation: Aa. Bonapasta et al., Near-edge states induced by hydrogen inclusion in gallium arsenide, PHYS ST S-B, 210(2), 1998, pp. 277-282

Authors: Calvani, P Capizzi, M Lupi, S
Citation: P. Calvani et al., Comment on "Optical properties of Nd1.85Ce0.15CuO4", PHYS REV B, 58(21), 1998, pp. 14621-14622
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