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Results: 1-25 |
Results: 25
Analytic models for the temperature dependence of the breakdown voltage of6H-and 4H-SiC rectifiers
Authors: Lee, YS Han, MK Choi, YI
Citation: Ys. Lee et al., Analytic models for the temperature dependence of the breakdown voltage of6H-and 4H-SiC rectifiers, J KOR PHYS, 39(1), 2001, pp. 20-22
Mechanism of growth inhibitory effect of mitomycin-C on cultured human retinal pigment epithelial cells: Apoptosis and cell cycle arrest
Authors: Kang, SG Chung, H Yoo, YD Lee, JG Choi, YI Yu, YS
Citation: Sg. Kang et al., Mechanism of growth inhibitory effect of mitomycin-C on cultured human retinal pigment epithelial cells: Apoptosis and cell cycle arrest, CURR EYE R, 22(3), 2001, pp. 174-181
Notch1 confers a resistance to glucocorticoid-induced apoptosis on developing thymocytes by down-regulating SRG3 expression
Authors: Choi, YI Jeon, SH Jang, J Han, S Kim, JK Chung, H Lee, HW Chung, HY Park, SD Seong, RH
Citation: Yi. Choi et al., Notch1 confers a resistance to glucocorticoid-induced apoptosis on developing thymocytes by down-regulating SRG3 expression, P NAS US, 98(18), 2001, pp. 10267-10272
Numerical analysis on the LDMOS with a double epi-layer and trench electrodes
Authors: Park, IY Choi, YI Chung, SK Lim, HJ Mo, SI Choi, JS Han, MK
Citation: Iy. Park et al., Numerical analysis on the LDMOS with a double epi-layer and trench electrodes, MICROELEC J, 32(5-6), 2001, pp. 497-502
Peripheral T cells become sensitive to glucocorticoid- and stress-induced apoptosis in transgenic mice overexpressing SRG3
Authors: Han, SM Choi, H Ko, MG Choi, YI Sohn, DH Kim, JK Shin, D Chung, HY Lee, HW Kim, JB Park, SD Seong, RH
Citation: Sm. Han et al., Peripheral T cells become sensitive to glucocorticoid- and stress-induced apoptosis in transgenic mice overexpressing SRG3, J IMMUNOL, 167(2), 2001, pp. 805-810
Analysis of dual-gate LIGBT with gradual hole injection
Authors: Lee, YS Lee, BH Lee, WO Han, MK Choi, YI
Citation: Ys. Lee et al., Analysis of dual-gate LIGBT with gradual hole injection, IEEE DEVICE, 48(9), 2001, pp. 2154-2160
In-situ vacuum-sealed lateral FEAs with low turn-on voltage and high transconductance
Authors: Lim, MS Park, CM Han, MK Choi, YI
Citation: Ms. Lim et al., In-situ vacuum-sealed lateral FEAs with low turn-on voltage and high transconductance, IEEE DEVICE, 48(1), 2001, pp. 161-165
A new lateral dual-gate thyristor with current saturation
Authors: Lee, YS Byeon, DS Han, MK Choi, YI
Citation: Ys. Lee et al., A new lateral dual-gate thyristor with current saturation, JPN J A P 1, 39(4B), 2000, pp. 1979-1981
A study on the dielectric relaxation time of arachidic acid monolayers by MDC measurement
Authors: Cho, SY Lee, KS Song, JW Kim, YK Choi, YI Liu, Y Iwamoto, M
Citation: Sy. Cho et al., A study on the dielectric relaxation time of arachidic acid monolayers by MDC measurement, MOLEC CRYST, 349, 2000, pp. 191-194
Temperature dependent effective ionization coefficient for Si
Authors: Chung, YS Park, IY Choi, YI Chung, SK
Citation: Ys. Chung et al., Temperature dependent effective ionization coefficient for Si, MICROEL ENG, 51-2, 2000, pp. 535-540
Linearly-graded surface-doped SOI LDMOSFET with recessed source
Authors: Kim, HW Choi, YI Chung, SK
Citation: Hw. Kim et al., Linearly-graded surface-doped SOI LDMOSFET with recessed source, MICROEL ENG, 51-2, 2000, pp. 547-554
Numerical analysis of SOI LDMOS using a recessed source and a trench drain
Authors: Yoo, SJ Kim, SH Choi, YI Chung, SK
Citation: Sj. Yoo et al., Numerical analysis of SOI LDMOS using a recessed source and a trench drain, MICROELEC J, 31(11-12), 2000, pp. 963-967
Investigation of field emission characteristics for Si-base materials: Titanium silicide, poly-Si, and single crystal Si
Authors: Lim, MS Park, CM Han, MK Choi, YI
Citation: Ms. Lim et al., Investigation of field emission characteristics for Si-base materials: Titanium silicide, poly-Si, and single crystal Si, J VAC SCI B, 17(2), 1999, pp. 635-637
Adaptor-aided PCR to identify T-DNA junctions in transgenic plants
Authors: Choi, YI Noh, EW Han, MS Son, SH
Citation: Yi. Choi et al., Adaptor-aided PCR to identify T-DNA junctions in transgenic plants, BIOTECHNIQU, 27(2), 1999, pp. 222
A recessed source and trench drain SOI LDMOS improving the on-characteristics
Authors: Kim, SL Yang, HY Choi, YI
Citation: Sl. Kim et al., A recessed source and trench drain SOI LDMOS improving the on-characteristics, J KOR PHYS, 35, 1999, pp. S825-S828
The maximum controllable current of emitter switched thyristors employing the segmented P-base
Authors: Byeon, DS Lee, BH Han, MK Choi, YI
Citation: Ds. Byeon et al., The maximum controllable current of emitter switched thyristors employing the segmented P-base, PHYS SCR, T79, 1999, pp. 294-296
A low on-resistance SOI LDMOS with an elevated internal ring
Authors: Kim, SL Yang, HY Choi, YI Chung, SR Han, MK
Citation: Sl. Kim et al., A low on-resistance SOI LDMOS with an elevated internal ring, PHYS SCR, T79, 1999, pp. 303-306
A lateral trench-MOS bipolar-mode FET an silicon-on-insulator
Authors: Kim, DY Byeon, DS Han, MK Choi, YI
Citation: Dy. Kim et al., A lateral trench-MOS bipolar-mode FET an silicon-on-insulator, PHYS SCR, T79, 1999, pp. 307-310
Analytic breakdown modeling for GaAs Schottky diodes
Authors: Park, IY Choi, YI
Citation: Iy. Park et Yi. Choi, Analytic breakdown modeling for GaAs Schottky diodes, PHYS SCR, T79, 1999, pp. 314-317
Trench cathode TIGBT with improved latch-up characteristics
Authors: Park, IY Choi, YI
Citation: Iy. Park et Yi. Choi, Trench cathode TIGBT with improved latch-up characteristics, PHYS SCR, T79, 1999, pp. 337-340
In-situ monitoring of anodic oxidation of p-type Si(100) by electrochemical impedance techniques in nonaqueous and aqueous solutions
Authors: Kim, MS Kim, KK Kim, SY Kim, Y Won, YH Choi, YI Mho, SI
Citation: Ms. Kim et al., In-situ monitoring of anodic oxidation of p-type Si(100) by electrochemical impedance techniques in nonaqueous and aqueous solutions, B KOR CHEM, 20(9), 1999, pp. 1049-1055
An insulated gate bipolar transistor employing the plugged n(+) anode
Authors: Chun, JH Lee, BH Byeon, DS Kim, DY Han, MK Choi, YI
Citation: Jh. Chun et al., An insulated gate bipolar transistor employing the plugged n(+) anode, MICROEL REL, 39(1), 1999, pp. 29-33
The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime
Authors: Byeon, DS Chun, JH Lee, BH Kim, DY Han, MK Choi, YI
Citation: Ds. Byeon et al., The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime, MICROELEC J, 30(6), 1999, pp. 571-575
A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics
Authors: Oh, JK Kim, DY Lee, BH Byeon, DS Han, MK Choi, YI
Citation: Jk. Oh et al., A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics, MICROELEC J, 30(6), 1999, pp. 577-581
The temperature characteristics of the LDMOS, LIGBT, SINFET and IBT
Authors: Lee, YS Lee, BH Byeon, DS Oh, JK Han, MK Kim, SD Choi, YI
Citation: Ys. Lee et al., The temperature characteristics of the LDMOS, LIGBT, SINFET and IBT, J KOR PHYS, 33, 1998, pp. S187-S191
Risultati: 1-25 |