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Results: 1-25 | 26-34
Results: 1-25/34
Temperature dependence of surface potential in a-Si : H pH-ion sensitive field effect transistor
Authors: Chou, JC Wang, YF Tsai, HM
Citation: Jc. Chou et al., Temperature dependence of surface potential in a-Si : H pH-ion sensitive field effect transistor, JPN J A P 1, 40(6A), 2001, pp. 3975-3978
Titanium nitride membrane application to extended gate field effect transistor pH sensor using VLSI technology
Authors: Chin, YL Chou, JC Lei, ZC Sun, TP Chung, WY Hsiung, SK
Citation: Yl. Chin et al., Titanium nitride membrane application to extended gate field effect transistor pH sensor using VLSI technology, JPN J A P 1, 40(11), 2001, pp. 6311-6315
Simulation and experimental study of the pH-sensing property for AlN thin films
Authors: Chiang, JL Chen, YC Chou, JC
Citation: Jl. Chiang et al., Simulation and experimental study of the pH-sensing property for AlN thin films, JPN J A P 1, 40(10), 2001, pp. 5900-5904
Letter to the editor on "Simulation of Ta2O5 gate ISFET temperature characteristics" by J.C. Chou, Y.S. Li, J.L. Chiang [Sensors and Actuators B 71 (2000) 73-76]
Authors: Chou, JC Li, YS Chiang, JL
Citation: Jc. Chou et al., Letter to the editor on "Simulation of Ta2O5 gate ISFET temperature characteristics" by J.C. Chou, Y.S. Li, J.L. Chiang [Sensors and Actuators B 71 (2000) 73-76], SENS ACTU-B, 80(3), 2001, pp. 290-291
Glucose ENFET doped with MnO2 powder
Authors: Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, KP Hsiung, SK
Citation: Lt. Yin et al., Glucose ENFET doped with MnO2 powder, SENS ACTU-B, 76(1-3), 2001, pp. 187-192
A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process
Authors: Chin, YL Chou, JC Sun, TP Chung, WY Hsiung, SK
Citation: Yl. Chin et al., A novel pH sensitive ISFET with on chip temperature sensing using CMOS standard process, SENS ACTU-B, 76(1-3), 2001, pp. 582-593
Study on the temperature effect, hysteresis and drift of pH-ISFET devices based on amorphous tungsten oxide
Authors: Chiang, JL Jan, SS Chou, JC Chen, YC
Citation: Jl. Chiang et al., Study on the temperature effect, hysteresis and drift of pH-ISFET devices based on amorphous tungsten oxide, SENS ACTU-B, 76(1-3), 2001, pp. 624-628
A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process
Authors: Chin, YL Chou, JC Sun, TP Liao, HK Chung, WY Hsiung, SK
Citation: Yl. Chin et al., A novel SnO2/Al discrete gate ISFET pH sensor with CMOS standard process, SENS ACTU-B, 75(1-2), 2001, pp. 36-42
Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET
Authors: Chou, JC Weng, CY
Citation: Jc. Chou et Cy. Weng, Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET, MATER CH PH, 71(2), 2001, pp. 120-124
Study of indium tin oxide thin film for separative extended gate ISFET
Authors: Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Lt. Yin et al., Study of indium tin oxide thin film for separative extended gate ISFET, MATER CH PH, 70(1), 2001, pp. 12-16
Temperature characteristics of a-Si : H gate ISFET
Authors: Chou, JC Wang, YF
Citation: Jc. Chou et Yf. Wang, Temperature characteristics of a-Si : H gate ISFET, MATER CH PH, 70(1), 2001, pp. 107-111
Color Doppler imaging study of retrobulbar hemodynamics in chronic angle-closure glaucoma
Authors: Cheng, CY Liu, CJ Chiou, HJ Chou, JC Hsu, WM Liu, JH
Citation: Cy. Cheng et al., Color Doppler imaging study of retrobulbar hemodynamics in chronic angle-closure glaucoma, OPHTHALMOL, 108(8), 2001, pp. 1445-1451
Characteristics of silicon nitride after O-2 plasma surface treatment for pH-ISFET applications
Authors: Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Lt. Yin et al., Characteristics of silicon nitride after O-2 plasma surface treatment for pH-ISFET applications, IEEE BIOMED, 48(3), 2001, pp. 340-344
Study on the optoelectronic properties of Al/a-Si : H/a-As2Se3 photoreceptor for electrophotography
Authors: Chou, JC Yang, SY
Citation: Jc. Chou et Sy. Yang, Study on the optoelectronic properties of Al/a-Si : H/a-As2Se3 photoreceptor for electrophotography, JPN J A P 1, 39(9A), 2000, pp. 5128-5131
Study on separative structure of EnFET to detect acetylcholine
Authors: Chi, LL Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, KP Hsiung, SK
Citation: Ll. Chi et al., Study on separative structure of EnFET to detect acetylcholine, SENS ACTU-B, 71(1-2), 2000, pp. 68-72
Simulation of Ta2O5-gate ISFET temperature characteristics
Authors: Chou, JC Li, YS Chiang, JL
Citation: Jc. Chou et al., Simulation of Ta2O5-gate ISFET temperature characteristics, SENS ACTU-B, 71(1-2), 2000, pp. 73-76
Separate structure extended gate H+-ion sensitive field effect transistor on a glass substrate
Authors: Yin, LT Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Lt. Yin et al., Separate structure extended gate H+-ion sensitive field effect transistor on a glass substrate, SENS ACTU-B, 71(1-2), 2000, pp. 106-111
Study on the amorphous tungsten trioxide ion-sensitive field effect transistor
Authors: Chou, JC Chiang, JL
Citation: Jc. Chou et Jl. Chiang, Study on the amorphous tungsten trioxide ion-sensitive field effect transistor, SENS ACTU-B, 66(1-3), 2000, pp. 106-108
The hysteresis and drift effect of hydrogenated amorphous silicon for ISFET
Authors: Chou, JC Hsiao, CN
Citation: Jc. Chou et Cn. Hsiao, The hysteresis and drift effect of hydrogenated amorphous silicon for ISFET, SENS ACTU-B, 66(1-3), 2000, pp. 181-183
The influence of isothermal annealing on tin oxide thin film for pH-ISFET sensor
Authors: Liao, HK Chou, JC Chung, WY Sun, TP Hsiung, SK
Citation: Hk. Liao et al., The influence of isothermal annealing on tin oxide thin film for pH-ISFET sensor, SENS ACTU-B, 65(1-3), 2000, pp. 23-25
Comparison of the pH sensitivity of different surfaces on tantalum pentoxide
Authors: Chou, JC Hsiao, CN
Citation: Jc. Chou et Cn. Hsiao, Comparison of the pH sensitivity of different surfaces on tantalum pentoxide, SENS ACTU-B, 65(1-3), 2000, pp. 237-238
Ion sensitive field effect transistor with amorphous tungsten trioxide gate for pH sensing
Authors: Chou, JC Chiang, JL
Citation: Jc. Chou et Jl. Chiang, Ion sensitive field effect transistor with amorphous tungsten trioxide gate for pH sensing, SENS ACTU-B, 62(2), 2000, pp. 81-87
Simulation of time-dependent effects of pH-ISFETs
Authors: Chou, JC Huang, KY Lin, JS
Citation: Jc. Chou et al., Simulation of time-dependent effects of pH-ISFETs, SENS ACTU-B, 62(2), 2000, pp. 88-91
Temperature effect of a-Si : H pH-ISFET
Authors: Chou, JC Wang, YF Lin, JS
Citation: Jc. Chou et al., Temperature effect of a-Si : H pH-ISFET, SENS ACTU-B, 62(2), 2000, pp. 92-96
Study and simulation of the drift behaviour of hydrogenated amorphous silicon gate pH-ISFET
Authors: Chou, JC Tsai, HM Shiao, CN Lin, JS
Citation: Jc. Chou et al., Study and simulation of the drift behaviour of hydrogenated amorphous silicon gate pH-ISFET, SENS ACTU-B, 62(2), 2000, pp. 97-101
Risultati: 1-25 | 26-34