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Results: 1-25/55
Authors:
Maes, HE
Claeys, C
Mertens, R
Campitelli, A
Van Hoof, C
De Boeck, J
Citation: He. Maes et al., Trends in microelectronics, optical detectors, and biosensors, ADV ENG MAT, 3(10), 2001, pp. 781-787
Authors:
Czerwinski, A
Katcki, J
Poyai, A
Simoen, E
Claeys, C
Ratajczak, J
Gaubas, E
Citation: A. Czerwinski et al., Statistical analysis of shallow p-n junction leakage increase using XTEM results probabilities, MAT SC S PR, 4(1-3), 2001, pp. 105-107
Authors:
Gaubas, E
Vaitkus, J
Simoen, E
Claeys, C
Vanhellemont, J
Citation: E. Gaubas et al., Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity, MAT SC S PR, 4(1-3), 2001, pp. 125-131
Authors:
Poyai, A
Simoen, E
Claeys, C
Rooyackers, R
Badenes, G
Citation: A. Poyai et al., Lifetime study in advanced isolation techniques, MAT SC S PR, 4(1-3), 2001, pp. 137-139
Authors:
Simoen, E
Loo, R
Roussel, P
Caymax, M
Bender, H
Claeys, C
Herzog, HJ
Blondeel, A
Clauws, P
Citation: E. Simoen et al., Defect analysis of n-type silicon strained layers, MAT SC S PR, 4(1-3), 2001, pp. 225-227
Authors:
Simoen, E
Poyai, A
Claeys, C
Lukyanchikova, N
Petrichuk, M
Garbar, N
Czerwinski, A
Katcki, J
Ratajczak, J
Gaubas, E
Citation: E. Simoen et al., Electrical characterization of shallow cobalt-silicided junctions, J MAT S-M E, 12(4-6), 2001, pp. 207-210
Authors:
Grau, L
Augendre, E
Simoen, E
Rooyackers, R
Claeys, C
Badenes, G
Romano-Rodriguez, A
Citation: L. Grau et al., Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS, J MAT S-M E, 12(4-6), 2001, pp. 211-214
Authors:
Kobayashi, K
Ohyama, H
Yoneoka, M
Hayama, K
Nakabayashi, M
Simoen, E
Claeys, C
Takami, Y
Takizawa, H
Kohiki, S
Citation: K. Kobayashi et al., Radiation damage of N-MOSFETS fabricated in a BiCMOS process, J MAT S-M E, 12(4-6), 2001, pp. 227-230
Authors:
Nakabayashi, N
Ohyama, H
Simoen, E
Ikegami, M
Claeys, C
Kobayashi, K
Yoneoka, M
Miyahara, K
Citation: N. Nakabayashi et al., Mechanical stress of the electrical performance of polycrystalline-siliconresistors, J MATER RES, 16(9), 2001, pp. 2579-2582
Authors:
Nakabayashi, M
Ohyama, H
Simoen, E
Ikegami, M
Claeys, C
Kobayashi, K
Yoneoka, M
Miyahara, K
Citation: M. Nakabayashi et al., Reliability of polycrystalline silicon thin film resistors, MICROEL REL, 41(9-10), 2001, pp. 1341-1346
Authors:
Ohyama, H
Nakabayashi, M
Simoen, E
Claeys, C
Tanaka, T
Hirao, T
Onada, S
Kobayashi, K
Citation: H. Ohyama et al., Radiation damages of polycrystalline silicon films and npn Si transistors by high-energy particle irradiation, MICROEL REL, 41(9-10), 2001, pp. 1443-1448
Authors:
Ohyama, H
Simoen, E
Kuroda, S
Claeys, C
Takami, Y
Hakata, T
Kobayashi, K
Nakabayashi, M
Sunaga, H
Citation: H. Ohyama et al., Degradation and recovery of AlGaAs/GaAs p-HEMT irradiated by high-energy particle, MICROEL REL, 41(1), 2001, pp. 79-85
Authors:
Simoen, E
Claeys, C
Citation: E. Simoen et C. Claeys, Impact of CMOS processing steps on the drain current kink of NMOSFETs at liquid helium temperature, IEEE DEVICE, 48(6), 2001, pp. 1207-1215
Authors:
Poyai, A
Simoen, E
Claeys, C
Citation: A. Poyai et al., Impact of a high electric field on the extraction of the generation lifetime from the reverse generation current component of shallow n(+)-p-well diodes, IEEE DEVICE, 48(10), 2001, pp. 2445-2446
Authors:
Poyai, A
Simoen, E
Claeys, C
Rooyackers, R
Badenes, G
Citation: A. Poyai et al., Diode analysis of high-energy boron implantation-induced P-well defects, J ELCHEM SO, 148(9), 2001, pp. G507-G512
Authors:
Efremov, AA
Litovchenko, VG
Romanova, GP
Sarikov, AV
Claeys, C
Citation: Aa. Efremov et al., Carbon enhancement of SiO2 nucleation in buried oxide synthesis, J ELCHEM SO, 148(5), 2001, pp. F92-F97
Authors:
Claeys, C
Simoen, E
Neimash, VB
Kraitchinskii, A
Kras'ko, M
Puzenko, O
Blondeel, A
Clauws, P
Citation: C. Claeys et al., Tin doping of silicon for controlling oxygen precipitation and radiation hardness, J ELCHEM SO, 148(12), 2001, pp. G738-G745
Authors:
Poyai, A
Simoen, E
Claeys, C
Citation: A. Poyai et al., Hole-trapping-related transients in shallow n(+)-p junctions fabricated ina high-energy boron-implanted p well, APPL PHYS L, 78(7), 2001, pp. 949-951
Authors:
Poyai, A
Simoen, E
Claeys, C
Czerwinski, A
Gaubas, E
Citation: A. Poyai et al., Improved extraction of the activation energy of the leakage current in silicon p-n junction diodes, APPL PHYS L, 78(14), 2001, pp. 1997-1999
Authors:
Claeys, C
Vanden Abeele, P
Citation: C. Claeys et P. Vanden Abeele, Means-end chain theory and involvement: Potential research directions, UNDERSTANDING CONSUMER DECISION MAKING, 2001, pp. 359-387
Authors:
Simoen, E
Claeys, C
Citation: E. Simoen et C. Claeys, The impact of high-energy proton irradiation on the low-frequency 1/f noise in FZ-silicon diodes, MAT SC S PR, 3(4), 2000, pp. 263-267
Authors:
Lukyanchikova, NB
Petrichuk, MV
Garbar, NP
Simoen, E
Claeys, C
Citation: Nb. Lukyanchikova et al., Influence of the substrate voltage on the random telegraph signal parameters in submicron n-channel metal-oxide-semiconductor field-effect transistors under a constant inversion charge density, APPL PHYS A, 70(3), 2000, pp. 345-353
Authors:
Gaubas, E
Simoen, E
Claeys, C
Vanhellemont, J
Citation: E. Gaubas et al., Perpendicular excitation-probe microwave absorption technique for carrier lifetime analysis in layered Si structures, MAT SCI E B, 73(1-3), 2000, pp. 1-6
Authors:
Poyai, A
Simoen, E
Claeys, C
Czerwinski, A
Citation: A. Poyai et al., Silicon substrate effects on the current-voltage characteristics of advanced p-n junction diodes, MAT SCI E B, 73(1-3), 2000, pp. 191-196
Authors:
Vanhellemont, J
Borghesi, A
Claeys, C
Citation: J. Vanhellemont et al., Special Issue: Containing papers presented at the European Materials Research Society 1999 Spring Meeting, Symposium E: Advances in Silicon Substrates, June 1-4, 1999, Strasbourg, France - Preface, MAT SCI E B, 73(1-3), 2000, pp. IX-IX