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Results:
1-23
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Results: 23
Authors:
ARITA K
HAYASHI S
OTSUKI T
CHEN Z
LIM M
BACON JW
DEARAUJO CAP
Citation: K. Arita et al., CHARACTERIZATION OF FERROELECTRIC GATE MOS CAPACITORS FORMED BY MOD TECHNIQUE FOR NONVOLATILE MEMORY APPLICATIONS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 663-672
Authors:
SOLAYAPPAN N
MCMILLAN LD
DEARAUJO CAP
GRANT B
Citation: N. Solayappan et al., 2ND-GENERATION LIQUID SOURCE MISTED CHEMICAL-DEPOSITION (LSMCD) TECHNOLOGY FOR FERROELECTRIC THIN-FILMS, Integrated ferroelectrics, 18(1-4), 1997, pp. 127-136
Authors:
UCHIDA H
SOYAMA N
KAGEYAMA K
OGI K
SCOTT MC
CUCHIARO JD
MCMILLAN LD
DEARAUJO CAP
Citation: H. Uchida et al., CHARACTERIZATION OF SELF-PATTERNED SBT SBNT THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS/, Integrated ferroelectrics, 18(1-4), 1997, pp. 249-261
Authors:
UCHIDA H
SOYAMA N
KAGEYAMA K
OGI K
SCOTT MC
CUCHIARO JD
DERBENWICK GF
MCMILLAN LD
DEARAUJO CAP
Citation: H. Uchida et al., CHARACTERIZATION OF SELF-PATTERNED SRBI2TA2O9 THIN-FILMS FROM PHOTO-SENSITIVE SOLUTIONS, Integrated ferroelectrics, 16(1-4), 1997, pp. 41-52
Authors:
SOLAYAPPAN N
DERBENWICK GF
MCMILLAN LD
DEARAUJO CAP
HAYASHI S
Citation: N. Solayappan et al., CONFORMAL LSMCD DEPOSITION OF SRBI2(TA1-XNBX)(2)O-9, Integrated ferroelectrics, 14(1-4), 1997, pp. 237-246
Authors:
CARRICO AS
DEARAUJO CAP
MIHARA T
WATANABE H
Citation: As. Carrico et al., SPACE-CHARGE CAPACITANCE OF FERROELECTRIC MEMORY CELLS IN THE NONLINEAR REGIME, Integrated ferroelectrics, 13(4), 1996, pp. 247-256
Authors:
SCOTT JF
ROSS FM
DEARAUJO CAP
SCOTT MC
HUFFMAN M
Citation: Jf. Scott et al., STRUCTURE AND DEVICE CHARACTERISTICS OF SRBI2TA2O9-BASED NONVOLATILE RANDOM-ACCESS MEMORIES, MRS bulletin, 21(7), 1996, pp. 33-39
Authors:
ROSS FM
KRISHNAN KM
THANGARAJ N
FARROW RFC
MARKS RF
CEBOLLADA A
PARKIN SSP
TONEY MF
HUFFMAN M
DEARAUJO CAP
MCMILLAN LD
CUCHIARO J
SCOTT MC
ECHER C
PONCE F
OKEEFE MA
NELSON EC
Citation: Fm. Ross et al., APPLICATIONS OF ELECTRON-MICROSCOPY IN COLLABORATIVE INDUSTRIAL-RESEARCH, MRS bulletin, 21(5), 1996, pp. 17-23
Authors:
MIHARA T
YOSHIMORI H
WATANABE H
DEARAUJO CAP
Citation: T. Mihara et al., CHARACTERISTICS OF BISMUTH LAYERED SRBI2TA2O9 THIN-FILM CAPACITORS AND COMPARISON WITH PB(ZR,TI)O-3, JPN J A P 1, 34(9B), 1995, pp. 5233-5239
Authors:
WATANABE H
MIHARA T
YOSHIMORI H
DEARAUJO CAP
Citation: H. Watanabe et al., PREPARATION OF FERROELECTRIC THIN-FILMS OF BISMUTH LAYER STRUCTURED COMPOUNDS, JPN J A P 1, 34(9B), 1995, pp. 5240-5244
Authors:
MIHARA T
YOSHIMORI H
WATANABE H
DEARAUJO CAP
Citation: T. Mihara et al., DEPOLARIZATION CHARACTERISTICS IN SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS, JPN J A P 1, 34(5A), 1995, pp. 2380-2388
Authors:
SUMI T
MORIWAKI N
NAKANE G
NAKAKUMA T
JUDAI Y
UEMOTO Y
NAGANO Y
HAYASHI S
AZUMA M
OTSUKI T
KANO G
CUCHIARO JD
SCOTT MC
MCMILLAN LD
DEARAUJO CAP
Citation: T. Sumi et al., 256KB FERROELECTRIC NONVOLATILE MEMORY TECHNOLOGY FOR 1T 1C CELL WITH100NS READ/WRITE TIME AT 3V/, Integrated ferroelectrics, 6(1-4), 1995, pp. 1-13
Authors:
SCOTT JF
GALT D
PRICE JC
BEALL JA
ONO RH
DEARAUJO CAP
MCMILLAN LD
Citation: Jf. Scott et al., A MODEL OF VOLTAGE-DEPENDENT DIELECTRIC LOSSES FOR FERROELECTRIC MMICDEVICES, Integrated ferroelectrics, 6(1-4), 1995, pp. 189-203
Authors:
MELNICK BM
GREGORY J
DEARAUJO CAP
Citation: Bm. Melnick et al., CHARACTERIZATION OF AN N-CHANNEL 1T-1C NONVOLATILE MEMORY CELL USING FERROELECTRIC SRBI2TA2O9 AS THE CAPACITOR DIELECTRIC, Integrated ferroelectrics, 11(1-4), 1995, pp. 145-160
Authors:
SHIMADA Y
NAGANO Y
FUJII E
AZUMA M
UEMOTO Y
SUMI T
JUDAI Y
HAYASHI S
MORIWAKI N
NAKANE J
OTSUKI T
DEARAUJO CAP
MCMILLAN LD
Citation: Y. Shimada et al., INTEGRATION TECHNOLOGY OF FERROELECTRICS AND THE PERFORMANCE OF THE INTEGRATED FERROELECTRICS, Integrated ferroelectrics, 11(1-4), 1995, pp. 229-245
Authors:
MIHARA T
YOSHIMORI H
WATANABE H
DEARAUJO CAP
Citation: T. Mihara et al., DEPOLARIZATION CHARACTERISTICS OF FERROELECTRIC PB(ZR0.4TI0.6)O-3 ANDSRBI2TA2O9 THIN-FILMS, Integrated ferroelectrics, 10(1-4), 1995, pp. 351-359
Authors:
DEARAUJO CAP
CUCHIARO JD
MCMILLAN LD
SCOTT MC
SCOTT JF
Citation: Cap. Dearaujo et al., FATIGUE-FREE FERROELECTRIC CAPACITORS WITH PLATINUM-ELECTRODES, Nature, 374(6523), 1995, pp. 627-629
Authors:
MIHARA T
WATANABE H
DEARAUJO CAP
Citation: T. Mihara et al., CHARACTERISTIC CHANGE DUE TO POLARIZATION FATIGUE OF SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS, JPN J A P 1, 33(9B), 1994, pp. 5281-5286
Authors:
MIHARA T
WATANABE H
DEARAUJO CAP
Citation: T. Mihara et al., POLARIZATION FATIGUE CHARACTERISTICS OF SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O3 THIN-FILM CAPACITORS, JPN J A P 1, 33(7A), 1994, pp. 3996-4002
Authors:
MIHARA T
YOSHIMORI H
WATANABE H
DEARAUJO CAP
Citation: T. Mihara et al., ORIGIN OF DEPOLARIZATION IN SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS, JPN J A P 2, 33(12A), 1994, pp. 120001703-120001706
Authors:
SCOTT JF
DEARAUJO CAP
MELNICK BM
Citation: Jf. Scott et al., LOSS MECHANISMS IN FINE-GRAINED FERROELECTRIC CERAMIC THIN-FILMS FOR ULSI MEMORIES (DRAMS), Journal of alloys and compounds, 212, 1994, pp. 451-454
Authors:
ARITA K
FUJII E
SHIMADA Y
UEMOTO Y
AZUMA M
HAYASHI S
NASU T
INOUE A
MATSUDA A
NAGANO Y
KATSU S
OTSUKI T
KANO G
MCMILLAN LD
DEARAUJO CAP
Citation: K. Arita et al., APPLICATION OF FERROELECTRIC THIN-FILMS TO SI DEVICES, IEICE transactions on electronics, E77C(3), 1994, pp. 392-398
Authors:
MIHARA T
WATANABE H
DEARAUJO CAP
Citation: T. Mihara et al., EVALUATION OF IMPRINT PROPERTIES IN SOL-GEL FERROELECTRIC PB(ZRTI)O3 THIN-FILM CAPACITORS, JPN J A P 1, 32(9B), 1993, pp. 4168-4174
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1-23
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