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Results: 1-13 |
Results: 13
Fabrication of ATLAS pixel detector prototypes at IRST
Authors: Boscardin, M Dalla Betta, GF Gregori, P Zen, M Zorzi, N
Citation: M. Boscardin et al., Fabrication of ATLAS pixel detector prototypes at IRST, NUCL INST A, 465(1), 2001, pp. 83-87
Development of ALICE microstrip detectors at IRST
Authors: Boscardin, M Bosisio, L Dalla Betta, GF Gregori, P Rachevskaia, I Zorzi, N
Citation: M. Boscardin et al., Development of ALICE microstrip detectors at IRST, NUCL INST A, 461(1-3), 2001, pp. 188-191
Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors
Authors: Dalla Betta, GF Boscardin, M Bosisio, L Rachevskaia, I Zen, M Zorzi, N
Citation: Gf. Dalla Betta et al., Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors, NUCL INST A, 460(2-3), 2001, pp. 306-315
Compact CMOS implementation of a low-power, current-mode programmable cellular neural network
Authors: Ravezzi, L Dalla Betta, GF Setti, G
Citation: L. Ravezzi et al., Compact CMOS implementation of a low-power, current-mode programmable cellular neural network, INT J CIRCU, 29(3), 2001, pp. 299-310
Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors
Authors: Verzellesi, G Dalla Betta, GF Pignatel, GU
Citation: G. Verzellesi et al., Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors, IEEE NUCL S, 48(4), 2001, pp. 972-976
A versatile photodiode SPICE model for optical microsystem simulation
Authors: Ravezzi, L Dalla Betta, GF Stoppa, D Simoni, A
Citation: L. Ravezzi et al., A versatile photodiode SPICE model for optical microsystem simulation, MICROELEC J, 31(4), 2000, pp. 277-282
Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET
Authors: Fazzi, A Pignatel, GU Dalla Betta, GF Boscardin, M Varoli, V Verzellesi, G
Citation: A. Fazzi et al., Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET, IEEE NUCL S, 47(3), 2000, pp. 829-833
Multiguard structures for high-voltage operation of radiation-damaged silicon detectors
Authors: Da Rold, M Bacchetta, N Bisello, D Cavone, M Dalla Betta, GF De Liso, G Dell'Orso, R Fuochi, PG Lanza, A Messineo, A Mihul, A Militaru, O Paccagnella, A Tonelli, G Verdini, PG Verzellesi, G Wheadon, R
Citation: M. Da Rold et al., Multiguard structures for high-voltage operation of radiation-damaged silicon detectors, NUOV CIM A, 112(1-2), 1999, pp. 13-22
Feasibility study for double-sided silicon microstrip detector fabricationat IRST
Authors: Dalla Betta, GF Boscardin, M Bosisio, L Carmel-Barnea, N Ferrario, L Pignatel, GU Rachevskaia, I Zen, M Zorzi, N
Citation: Gf. Dalla Betta et al., Feasibility study for double-sided silicon microstrip detector fabricationat IRST, NUCL INST A, 431(1-2), 1999, pp. 83-91
An all-implanted p-channel Si JFET fully compatible with CMOS technology
Authors: Dalla Betta, GF Bellutti, P Boscardin, M Ferrario, L Soncini, G Zorzi, N
Citation: Gf. Dalla Betta et al., An all-implanted p-channel Si JFET fully compatible with CMOS technology, MICROELEC J, 30(3), 1999, pp. 281-285
Study of breakdown effects in silicon multiguard structures
Authors: Da Rold, M Bacchetta, N Bisello, D Paccagnella, A Dalla Betta, GF Verzellesi, G Militaru, O Wheadon, R Fuochi, PG Bozzi, C Dell'Orso, R Messineo, A Tonelli, G Verdini, PG
Citation: M. Da Rold et al., Study of breakdown effects in silicon multiguard structures, IEEE NUCL S, 46(4), 1999, pp. 1215-1223
Two-dimensional numerical simulation of edge-generated currents in type-inverted, p(+)-n single-sided silicon microstrip detectors
Authors: Verzellesi, G Dalla Betta, GF Pignatel, GU Soncini, G
Citation: G. Verzellesi et al., Two-dimensional numerical simulation of edge-generated currents in type-inverted, p(+)-n single-sided silicon microstrip detectors, IEEE NUCL S, 46(4), 1999, pp. 1253-1257
On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes
Authors: Verzellesi, G Dalla Betta, GF Bosisio, L Boscardin, M Pignatel, GU Soncini, G
Citation: G. Verzellesi et al., On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes, IEEE DEVICE, 46(4), 1999, pp. 817-820
Risultati: 1-13 |