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Results: 1-18 |
Results: 18
Radiation hardness of SiC ion detectors under relativistic protons
Authors: Ivanov, AM Strokan, NB Davydov, DV Savkina, NS Lebedev, AA Mironov, YT Ryabov, GA Ivanov, EM
Citation: Am. Ivanov et al., Radiation hardness of SiC ion detectors under relativistic protons, SEMICONDUCT, 35(4), 2001, pp. 481-484
Effect of structural imperfection on the spectrum of deep levels in 6H-SiC
Authors: Lebedev, AA Davydov, DV Tregubova, AS Bogdanova, EV Shcheglov, MP Pavlenko, MV
Citation: Aa. Lebedev et al., Effect of structural imperfection on the spectrum of deep levels in 6H-SiC, SEMICONDUCT, 35(12), 2001, pp. 1372-1374
Radiation defects in n-4H-SiC irradiated with 8-MeV protons
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovskii, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Radiation defects in n-4H-SiC irradiated with 8-MeV protons, SEMICONDUCT, 34(9), 2000, pp. 1016-1020
Radiation defects in n-6H-SiC irradiated with 8 MeV protons
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovskii, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Radiation defects in n-6H-SiC irradiated with 8 MeV protons, SEMICONDUCT, 34(8), 2000, pp. 861-866
6H-SiC epilayers as nuclear particle detectors
Authors: Lebedev, AA Savkina, NS Ivanov, AM Strokan, NB Davydov, DV
Citation: Aa. Lebedev et al., 6H-SiC epilayers as nuclear particle detectors, SEMICONDUCT, 34(2), 2000, pp. 243-249
Special features of alpha-particle detection with thin semi-insulating 6H-SiC films
Authors: Strokan, NB Lebedev, AA Ivanov, AM Davydov, DV Kozlovskii, VV
Citation: Nb. Strokan et al., Special features of alpha-particle detection with thin semi-insulating 6H-SiC films, SEMICONDUCT, 34(12), 2000, pp. 1386-1390
Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum
Authors: Lebedev, AA Davydov, DV Savkina, NS Tregubova, AS Shcheglov, MP Yakimova, R Syvajarvi, M Janzen, E
Citation: Aa. Lebedev et al., Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum, SEMICONDUCT, 34(10), 2000, pp. 1133-1136
Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage
Authors: Lebedev, AA Lebedev, AA Davydov, DV
Citation: Aa. Lebedev et al., Capacitance measurements for diodes in the case of strong dependence of the diode-base series resistance on the applied voltage, SEMICONDUCT, 34(1), 2000, pp. 115-118
Experimental investigations of the hydrodynamics of the flow part of models of a water-based liquid-metal target
Authors: Beznosov, AV Davydov, DV Meluzov, AG Khokhlov, DI Orlov, YI Levchenko, YD
Citation: Av. Beznosov et al., Experimental investigations of the hydrodynamics of the flow part of models of a water-based liquid-metal target, ATOM ENERGY, 89(5), 2000, pp. 863-867
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
Authors: Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Raynaud, C Chante, JP Locatelli, ML Planson, D Milan, J Godignon, P Campos, FJ Mestres, N Pascual, J Brezeanu, G Badila, M
Citation: Ns. Savkina et al., Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy, MAT SCI E B, 77(1), 2000, pp. 50-54
Doping of n-type 6H-SiC and 4H-SiC with defects created with a proton beam
Authors: Lebedev, AA Veinger, AI Davydov, DV Kozlovski, VV Savkina, NS Strel'chuk, AM
Citation: Aa. Lebedev et al., Doping of n-type 6H-SiC and 4H-SiC with defects created with a proton beam, J APPL PHYS, 88(11), 2000, pp. 6265-6271
Selective N(1)-arylation of benzotriazole with activated aryl halides under conditions of phase transfer catalysis
Authors: Beletskaya, IP Davydov, DV Gorovoi, MS Kardashov, SV
Citation: Ip. Beletskaya et al., Selective N(1)-arylation of benzotriazole with activated aryl halides under conditions of phase transfer catalysis, RUSS CHEM B, 48(8), 1999, pp. 1533-1536
Investigation of the effect of surface treatment of a semiconductor on thecharacteristics of 6H-SiC Schottky diodes
Authors: Lebedev, AA Davydov, DV Zelenin, VV Korogodskii, ML
Citation: Aa. Lebedev et al., Investigation of the effect of surface treatment of a semiconductor on thecharacteristics of 6H-SiC Schottky diodes, SEMICONDUCT, 33(8), 1999, pp. 875-876
Experimental investigations of the removal of contaminants from lead-bismuth coolant and the liquid-metal target loop
Authors: Beznosov, AV Meluzov, AG Davydov, DV Khokhlov, DI
Citation: Av. Beznosov et al., Experimental investigations of the removal of contaminants from lead-bismuth coolant and the liquid-metal target loop, ATOM ENERGY, 87(4), 1999, pp. 769-771
New results in sublimation growth of the SiC epilayers
Authors: Savkina, NS Lebedev, AA Davydov, DV Strel'chuk, AM Tregubova, AS Yagovkina, MA
Citation: Ns. Savkina et al., New results in sublimation growth of the SiC epilayers, MAT SCI E B, 61-2, 1999, pp. 165-167
Studies of the effect of proton irradiation on 6H-SiC pn junction properties
Authors: Lebedev, AA Strel'chuk, AM Kozlovski, VV Savkina, NS Davydov, DV Solov'ev, VV
Citation: Aa. Lebedev et al., Studies of the effect of proton irradiation on 6H-SiC pn junction properties, MAT SCI E B, 61-2, 1999, pp. 450-453
Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers
Authors: Shmidt, NM Davydov, DV Emtsev, VV Krestnikov, IL Lebedev, AA Lundin, WV Poloskin, DS Sakharov, AV Usikov, AS Osinsky, AV
Citation: Nm. Shmidt et al., Effect of annealing on defects in As-grown and gamma-ray irradiated n-GaN layers, PHYS ST S-B, 216(1), 1999, pp. 533-536
Doping of 6H-SiC pn structures by proton irradiation
Authors: Strel'chuk, AM Lebedev, AA Kozlovski, VV Savkina, NS Davydov, DV Solov'ev, VV Rastegaeva, MG
Citation: Am. Strel'Chuk et al., Doping of 6H-SiC pn structures by proton irradiation, NUCL INST B, 147(1-4), 1999, pp. 74-78
Risultati: 1-18 |