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Results: 1-25 | 26-50 | 51-54
Results: 1-25/54
LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPE-INDUCED LUMINESCENCE OFGAN
Authors: EVOY S HARNETT CK CRAIGHEAD HG EUSTIS TJ DAVIS WA MURPHY MJ SCHAFF WJ EASTMAN LF
Citation: S. Evoy et al., LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPE-INDUCED LUMINESCENCE OFGAN, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1943-1947
MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN WURTZITE ALUMINUM NITRIDE
Authors: OLEARY SK FOUTZ BE SHUR MS BHAPKAR UV EASTMAN LF
Citation: Sk. Oleary et al., MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN WURTZITE ALUMINUM NITRIDE, Solid state communications, 105(10), 1998, pp. 621-626
SCATTERING OF ELECTRONS AT THREADING DISLOCATIONS IN GAN
Authors: WEIMANN NG EASTMAN LF DOPPALAPUDI D NG HM MOUSTAKAS TD
Citation: Ng. Weimann et al., SCATTERING OF ELECTRONS AT THREADING DISLOCATIONS IN GAN, Journal of applied physics, 83(7), 1998, pp. 3656-3659
ELECTRON-TRANSPORT IN WURTZITE INDIUM NITRIDE
Authors: OLEARY SK FOUTZ BE SHUR MS BHAPKAR UV EASTMAN LF
Citation: Sk. Oleary et al., ELECTRON-TRANSPORT IN WURTZITE INDIUM NITRIDE, Journal of applied physics, 83(2), 1998, pp. 826-829
THE ROLE OF DISLOCATION SCATTERING IN N-TYPE GAN FILMS
Authors: NG HM DOPPALAPUDI D MOUSTAKAS TD WEIMANN NG EASTMAN LF
Citation: Hm. Ng et al., THE ROLE OF DISLOCATION SCATTERING IN N-TYPE GAN FILMS, Applied physics letters, 73(6), 1998, pp. 821-823
CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS
Authors: EYINK KG SEAFORD ML HAAS TW TOMICH DH LAMPERT WV WALCK SD SOLOMON JS MITCHEL WC EASTMAN LF
Citation: Kg. Eyink et al., CHARACTERIZATION OF LOW-TEMPERATURE-GROWN ALSB AND GASB BUFFER LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1187-1190
SUBNANOMETER ANALYSIS OF MOLECULAR-BEAM EPITAXY-GROWN TERNARY ARSENIDES
Authors: SEAFORD ML WU W EYINK KG TOMICH DH TUCKER JR EASTMAN LF
Citation: Ml. Seaford et al., SUBNANOMETER ANALYSIS OF MOLECULAR-BEAM EPITAXY-GROWN TERNARY ARSENIDES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1274-1278
0.12-MU-M GATE III-V NITRIDE HFETS WITH HIGH CONTACT RESISTANCES
Authors: BURM J CHU K SCHAFF WJ EASTMAN LF KHAN MA CHEN QH YANG JW SHUR MS
Citation: J. Burm et al., 0.12-MU-M GATE III-V NITRIDE HFETS WITH HIGH CONTACT RESISTANCES, IEEE electron device letters, 18(4), 1997, pp. 141-143
RECESSED GATE GAN MODFETS
Authors: BURM J SCHAFF WJ MARTIN GH EASTMAN LF AMANO H AKASAKI I
Citation: J. Burm et al., RECESSED GATE GAN MODFETS, Solid-state electronics, 41(2), 1997, pp. 247-250
GAN BASED HETEROSTRUCTURE FOR HIGH-POWER DEVICES
Authors: KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF WJ EASTMAN LF
Citation: Ma. Khan et al., GAN BASED HETEROSTRUCTURE FOR HIGH-POWER DEVICES, Solid-state electronics, 41(10), 1997, pp. 1555-1559
1.3 MU-M LASERS ON GAAS(111)B EMPLOYING ORDERED (INAS)(1)(GAAS)(1) QUANTUM-WELLS FOR HIGH-FREQUENCY RESPONSE APPLICATIONS
Authors: GREENBERG J EASTMAN LF
Citation: J. Greenberg et Lf. Eastman, 1.3 MU-M LASERS ON GAAS(111)B EMPLOYING ORDERED (INAS)(1)(GAAS)(1) QUANTUM-WELLS FOR HIGH-FREQUENCY RESPONSE APPLICATIONS, Microelectronics, 28(8-10), 1997, pp. 947-955
NARROW-CHANNEL GAINP INGAAS/GAAS MODFETS FOR HIGH-FREQUENCY AND POWERAPPLICATIONS/
Authors: PEREIASLAVETS B MARTIN GH EASTMAN LF YANKA RW BALLINGALL JM BRAUNSTEIN J BACHEM KH RIDLEY BK
Citation: B. Pereiaslavets et al., NARROW-CHANNEL GAINP INGAAS/GAAS MODFETS FOR HIGH-FREQUENCY AND POWERAPPLICATIONS/, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1341-1348
AN IMPROVED SMALL-SIGNAL EQUIVALENT-CIRCUIT MODEL FOR III-V NITRIDE MODFETS WITH LARGE CONTACT RESISTANCES
Authors: BURM J SCHAFF WJ EASTMAN LF AMANO H AKASAKI I
Citation: J. Burm et al., AN IMPROVED SMALL-SIGNAL EQUIVALENT-CIRCUIT MODEL FOR III-V NITRIDE MODFETS WITH LARGE CONTACT RESISTANCES, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 906-907
MICROWAVE PERFORMANCE OF 0.25 MU-M DOPED CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR AT ELEVATED-TEMPERATURES/
Authors: CHEN Q GASKA R KHAN MA SHUR MS PING A ADESIDA I BURM J SCHAFF WJ EASTMAN LF
Citation: Q. Chen et al., MICROWAVE PERFORMANCE OF 0.25 MU-M DOPED CHANNEL GAN ALGAN HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR AT ELEVATED-TEMPERATURES/, Electronics Letters, 33(7), 1997, pp. 637-639
ULTRA-LOW RESISTIVE OHMIC CONTACTS ON N-GAN USING SI IMPLANTATION
Authors: BURM J CHU K DAVIS WA SCHAFF WJ EASTMAN LF EUSTIS TJ
Citation: J. Burm et al., ULTRA-LOW RESISTIVE OHMIC CONTACTS ON N-GAN USING SI IMPLANTATION, Applied physics letters, 70(4), 1997, pp. 464-466
COMPARISON OF HIGH-FIELD ELECTRON-TRANSPORT IN GAN AND GAAS
Authors: FOUTZ BE EASTMAN LF BHAPKAR UV SHUR MS
Citation: Be. Foutz et al., COMPARISON OF HIGH-FIELD ELECTRON-TRANSPORT IN GAN AND GAAS, Applied physics letters, 70(21), 1997, pp. 2849-2851
LOW-FREQUENCY GAIN IN MSM PHOTODIODES DUE TO CHARGE ACCUMULATION AND IMAGE FORCE LOWERING
Authors: BURM J EASTMAN LF
Citation: J. Burm et Lf. Eastman, LOW-FREQUENCY GAIN IN MSM PHOTODIODES DUE TO CHARGE ACCUMULATION AND IMAGE FORCE LOWERING, IEEE photonics technology letters, 8(1), 1996, pp. 113-115
CW OPERATION OF SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTUREFIELD-EFFECT TRANSISTORS AT 10 GHZ AND 15 GHZ/
Authors: KHAN MA CHEN Q SHUR MS DERMOTT BT HIGGINS JA BURM J SCHAFF WJ EASTMAN LF
Citation: Ma. Khan et al., CW OPERATION OF SHORT-CHANNEL GAN ALGAN DOPED CHANNEL HETEROSTRUCTUREFIELD-EFFECT TRANSISTORS AT 10 GHZ AND 15 GHZ/, IEEE electron device letters, 17(12), 1996, pp. 584-585
OPTIMIZATION OF THE SPACER LAYER THICKNESS IN ALINAS INGAAS/INP MOD FETS/
Authors: SEAFORD ML MARTIN G EASTMAN LF HARTZELL D MASSIE S
Citation: Ml. Seaford et al., OPTIMIZATION OF THE SPACER LAYER THICKNESS IN ALINAS INGAAS/INP MOD FETS/, Journal of electronic materials, 25(9), 1996, pp. 1551-1553
X-RAY-DIFFRACTION STUDY OF SIZE-DEPENDENT STRAIN IN QUANTUM-WIRE STRUCTURES
Authors: SHEN Q KYCIA SW TENTARELLI ES SCHAFF WJ EASTMAN LF
Citation: Q. Shen et al., X-RAY-DIFFRACTION STUDY OF SIZE-DEPENDENT STRAIN IN QUANTUM-WIRE STRUCTURES, Physical review. B, Condensed matter, 54(23), 1996, pp. 16381-16384
NONEQUILIBRIUM CARRIER TRANSPORT IN THE BASE OF HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: OZAYDIN M EASTMAN LF
Citation: M. Ozaydin et Lf. Eastman, NONEQUILIBRIUM CARRIER TRANSPORT IN THE BASE OF HETEROJUNCTION BIPOLAR-TRANSISTORS, Solid-state electronics, 39(5), 1996, pp. 731-735
ANALYSIS OF ABRUPT EMITTER-BASE HETEROJUNCTIONS BY MULTI-FLUX METHOD AND SELF-CONSISTENT SOLUTION OF SCHRODINGER AND POISSON EQUATIONS
Authors: OZAYDIN M EASTMAN LF
Citation: M. Ozaydin et Lf. Eastman, ANALYSIS OF ABRUPT EMITTER-BASE HETEROJUNCTIONS BY MULTI-FLUX METHOD AND SELF-CONSISTENT SOLUTION OF SCHRODINGER AND POISSON EQUATIONS, Solid-state electronics, 39(1), 1996, pp. 53-57
MONOLITHIC MILLIMETER-WAVE OPTICAL RECEIVERS
Authors: BURM J LITVIN KI MARTIN GH SCHAFF WJ EASTMAN LF
Citation: J. Burm et al., MONOLITHIC MILLIMETER-WAVE OPTICAL RECEIVERS, IEEE transactions on microwave theory and techniques, 44(11), 1996, pp. 1984-1989
GAINP INGAAS/GAAS GRADED BARRIER MODFET GROWN BY OMVPE - DESIGN, FABRICATION, AND DEVICE RESULTS/
Authors: PEREIASLAVETS B BACHEM KH BRAUNSTEIN J EASTMAN LF
Citation: B. Pereiaslavets et al., GAINP INGAAS/GAAS GRADED BARRIER MODFET GROWN BY OMVPE - DESIGN, FABRICATION, AND DEVICE RESULTS/, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1659-1664
NONLINEAR GAIN COEFFICIENTS IN SEMICONDUCTOR-LASERS - EFFECTS OF CARRIER HEATING
Authors: TSAI CY TSAI CY SPENCER RM LO YH EASTMAN LF
Citation: Cy. Tsai et al., NONLINEAR GAIN COEFFICIENTS IN SEMICONDUCTOR-LASERS - EFFECTS OF CARRIER HEATING, IEEE journal of quantum electronics, 32(2), 1996, pp. 201-212
Risultati: 1-25 | 26-50 | 51-54