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Results: 1-25/30
Authors:
ROSSLER JM
ROYTER Y
MULL DE
GOODHUE WD
FONSTAD CG
Citation: Jm. Rossler et al., BROMINE ION-BEAM-ASSISTED ETCHING OF INP AND GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1012-1017
Authors:
AHADIAN JF
VAIDYANATHAN PT
PATTERSON SG
ROYTER Y
MULL D
PETRICH GS
GOODHUE WD
PRASAD S
KOLODZIEJSKI LA
FONSTAD CG
Citation: Jf. Ahadian et al., PRACTICAL OEICS BASED ON THE MONOLITHIC INTEGRATION OF GAAS-INGAP LEDS WITH COMMERCIAL GAAS VLSI ELECTRONICS, IEEE journal of quantum electronics, 34(7), 1998, pp. 1117-1123
Authors:
WANG H
LUO JF
SHENOY KV
ROYTER Y
FONSTAD CG
PSALTIS D
Citation: H. Wang et al., MONOLITHIC INTEGRATION OF SEEDS AND VLSI GAAS CIRCUITS BY EPITAXY ON ELECTRONICS, IEEE photonics technology letters, 9(5), 1997, pp. 607-609
Authors:
CHOI WY
CHEN JC
FONSTAD CG
Citation: Wy. Choi et al., EVALUATION OF COUPLING-COEFFICIENTS FOR LATERALLY-COUPLED DISTRIBUTED-FEEDBACK LASERS, JPN J A P 1, 35(9A), 1996, pp. 4654-4659
Authors:
BRAUN EK
SHENOY KV
FONSTAD CG
MIKKELSON JM
Citation: Ek. Braun et al., ELEVATED-TEMPERATURE STABILITY OF GAAS DIGITAL INTEGRATED-CIRCUITS, IEEE electron device letters, 17(2), 1996, pp. 37-39
Authors:
PENG LH
FONSTAD CG
Citation: Lh. Peng et Cg. Fonstad, MULTIBAND COUPLING EFFECTS ON ELECTRON QUANTUM-WELL INTERSUBBAND TRANSITIONS - REPLY, Journal of applied physics, 80(1), 1996, pp. 603-605
Authors:
SMET JH
FONSTAD CG
HU Q
Citation: Jh. Smet et al., INTRAWELL AND INTERWELL INTERSUBBAND TRANSITIONS IN MULTIPLE-QUANTUM WELLS FOR FAR-INFRARED SOURCES, Journal of applied physics, 79(12), 1996, pp. 9305-9320
Authors:
LEE ZK
HELMAN D
WANG H
FONSTAD CG
SUNDARAM M
GOSSARD AC
Citation: Zk. Lee et al., FARADAY-STARK OPTOELECTRONIC EFFECT, Applied physics letters, 69(24), 1996, pp. 3731-3733
Authors:
SHENOY KV
FONSTAD CG
GROT AC
PSALTIS D
Citation: Kv. Shenoy et al., MONOLITHIC OPTOELECTRONIC CIRCUIT-DESIGN AND FABRICATION BY EPITAXIAL-GROWTH ON COMMERCIAL VLSI GAAS-MESFETS, IEEE photonics technology letters, 7(5), 1995, pp. 508-510
Authors:
MARTIN PS
CHEN JC
FONSTAD CG
HAUS HA
Citation: Ps. Martin et al., APPLICATION OF THE SPECTRAL INDEX METHOD TO LASER-DIODE DESIGN, Journal of lightwave technology, 13(4), 1995, pp. 569-574
Authors:
PENG LH
FONSTAD CG
Citation: Lh. Peng et Cg. Fonstad, MULTIBAND COUPLING EFFECTS ON ELECTRON QUANTUM-WELL INTERSUBBAND TRANSITIONS, Journal of applied physics, 77(2), 1995, pp. 747-754
HIGH PEAK-TO-VALLEY CURRENT RATIO IN0.22GA0.78AS AIAS RTDS ON GAAS USING RELAXED INXGA1-XAS BUFFERS/
Authors:
AGGARWAL RJ
FONSTAD CG
Citation: Rj. Aggarwal et Cg. Fonstad, HIGH PEAK-TO-VALLEY CURRENT RATIO IN0.22GA0.78AS AIAS RTDS ON GAAS USING RELAXED INXGA1-XAS BUFFERS/, Electronics Letters, 31(1), 1995, pp. 75-77
Authors:
PENG LH
FONSTAD CG
Citation: Lh. Peng et Cg. Fonstad, SPATIAL CONFINEMENT EFFECTS ON TYPE-II QUANTUM-WELL INTERSUBBAND TRANSITIONS, Applied physics letters, 66(14), 1995, pp. 1806-1808
Authors:
HIRAYAMA Y
SMET JH
PENG LH
FONSTAD CG
IPPEN EP
Citation: Y. Hirayama et al., FEASIBILITY OF 1.55 MU-M INTERSUBBAND PHOTONIC DEVICES USING INGAAS ALAS PSEUDOMORPHIC QUANTUM-WELL STRUCTURES/, JPN J A P 1, 33(1B), 1994, pp. 890-895
Authors:
CHOI WY
FONSTAD CG
Citation: Wy. Choi et Cg. Fonstad, GROWTH OPTIMIZATION OF MOLECULAR-BEAM EPITAXY-GROWN INALAS ON INP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1013-1015
Authors:
GROT AC
PSALTIS D
SHENOY KV
FONSTAD CG
Citation: Ac. Grot et al., INTEGRATION OF LEDS AND GAAS CIRCUITS BY MBE REGROWTH, IEEE photonics technology letters, 6(7), 1994, pp. 819-823
Authors:
SHENOY KV
FONSTAD CG
MIKKELSON JM
Citation: Kv. Shenoy et al., HIGH-TEMPERATURE STABILITY OF REFRACTORY-METAL VLSI GAAS-MESFETS, IEEE electron device letters, 15(3), 1994, pp. 106-108
Authors:
SMET JH
PENG LH
HIRAYAMA Y
FONSTAD CG
Citation: Jh. Smet et al., ELECTRON INTERSUBBAND TRANSITIONS TO 0.8 EV (1.55 MU-M) IN INGAAS ALAS SINGLE QUANTUM-WELLS, Applied physics letters, 64(8), 1994, pp. 986-987
Authors:
WONG VV
CHOI WY
CARTER JM
FONSTAD CG
SMITH HI
CHUNG Y
DAGLI N
Citation: Vv. Wong et al., RIDGE-WAVE-GUIDE SIDEWALL-GRATING DISTRIBUTED-FEEDBACK STRUCTURES FABRICATED BY X-RAY-LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2621-2624
Authors:
MCCANN PJ
FONSTAD CG
Citation: Pj. Mccann et Cg. Fonstad, GROWTH OF PBSE0.78TE0.22 LATTICE-MATCHED WITH BAF2, Thin solid films, 227(2), 1993, pp. 185-189
Authors:
CHOI WY
FONSTAD CG
Citation: Wy. Choi et Cg. Fonstad, PHOTOLUMINESCENCE AND X-RAY-DIFFRACTION STUDIES OF MBE-GROWN COMPRESSIVELY STRAINED INGAAS AND INGAALAS QUANTUM-WELLS FOR 1.55 MU-M LASER-DIODE APPLICATIONS, Journal of crystal growth, 127(1-4), 1993, pp. 555-559
Authors:
HIRAYAMA Y
CHOI WY
PENG LH
FONSTAD CG
Citation: Y. Hirayama et al., ABSORPTION-SPECTROSCOPY ON ROOM-TEMPERATURE EXCITONIC TRANSITIONS IN STRAINED-LAYER INGAAS INGAALAS MULTI-QUANTUM-WELL STRUCTURES/, Journal of applied physics, 74(1), 1993, pp. 570-578
Authors:
SHENOY KV
FONSTAD CG
GROT AC
PSALTIS D
Citation: Kv. Shenoy et al., MBE REGROWTH OF LEDS ON VLSI GAAS-MESFETS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2138-2139
Authors:
CHOI WY
BROEKAERT TPE
FONSTAD CG
Citation: Wy. Choi et al., MBE-GROWN INGAALAS 1.5-MU-M MQW RIDGE-WAVE-GUIDE LASER-DIODES WITH ALAS ETCH STOP LAYERS, Electronics Letters, 29(5), 1993, pp. 483-485
Authors:
SMET JH
FONSTAD CG
HU Q
Citation: Jh. Smet et al., MAGNETOTUNNELING SPECTROSCOPY IN WIDE IN0.53GA0.47AS IN0.52AL0.48AS DOUBLE-QUANTUM WELLS/, Applied physics letters, 63(16), 1993, pp. 2225-2227