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Results: 1-16 |
Results: 16
PERCEPTIVE ABILITIES OF PREMATURELY BORN CHILDREN
Authors: MARKOVIC M GOLUBOVIC S
Citation: M. Markovic et S. Golubovic, PERCEPTIVE ABILITIES OF PREMATURELY BORN CHILDREN, European journal of neuroscience, 10, 1998, pp. 12012-12012
MODELING RADIATION-INDUCED MOBILITY DEGRADATION IN MOSFETS
Authors: STOJADINOVIC N GOLUBOVIC S DAVIDOVIC V DJORICVELJKOVIC S DIMITRIJEV S
Citation: N. Stojadinovic et al., MODELING RADIATION-INDUCED MOBILITY DEGRADATION IN MOSFETS, Physica status solidi. a, Applied research, 169(1), 1998, pp. 63-66
A PSYCHOMOTORIC REEDUCATION IN STUTTERING THERAPY
Authors: MARKOVIC M GOLUBOVIC S
Citation: M. Markovic et S. Golubovic, A PSYCHOMOTORIC REEDUCATION IN STUTTERING THERAPY, Journal of fluency disorders, 22(2), 1997, pp. 154-155
TEMPERATURE-INDUCED REBOUND IN AL-GATE NMOS TRANSISTORS
Authors: PEJOVIC M GOLUBOVIC S RISTIC G
Citation: M. Pejovic et al., TEMPERATURE-INDUCED REBOUND IN AL-GATE NMOS TRANSISTORS, IEE proceedings. Circuits, devices and systems, 142(6), 1995, pp. 413-416
SENSITIVITY AND FADING OF PMOS DOSIMETERS WITH THICK GATE OXIDE
Authors: RISTIC G GOLUBOVIC S PEJOVIC M
Citation: G. Ristic et al., SENSITIVITY AND FADING OF PMOS DOSIMETERS WITH THICK GATE OXIDE, Sensors and actuators. A, Physical, 51(2-3), 1995, pp. 153-158
ANALYSIS OF GAMMA-IRRADIATION INDUCED DEGRADATION MECHANISMS IN POWERVDMOSFETS
Authors: STOJADINOVIC N GOLUBOVIC S DJORIC S DIMITRIJEV S
Citation: N. Stojadinovic et al., ANALYSIS OF GAMMA-IRRADIATION INDUCED DEGRADATION MECHANISMS IN POWERVDMOSFETS, Microelectronics and reliability, 35(3), 1995, pp. 587-602
EFFECT OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE ON MOBILITY IN P-CHANNEL MOSFETS
Authors: STOJADINOVIC N PEJOVIC M GOLUBOVIC S RISTIC G DAVIDOVIC V DIMITRIJEV S
Citation: N. Stojadinovic et al., EFFECT OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE ON MOBILITY IN P-CHANNEL MOSFETS, Electronics Letters, 31(6), 1995, pp. 497-498
SURGICAL-TREATMENT OF LARGE CORNEAL DERMOID
Authors: GOLUBOVIC S LATKOVIC Z HORVATICOBRADOVIC M
Citation: S. Golubovic et al., SURGICAL-TREATMENT OF LARGE CORNEAL DERMOID, Documenta ophthalmologica, 91(1), 1995, pp. 25-32
P-CHANNEL METAL-OXIDE-SEMICONDUCTOR DOSIMETER FADING DEPENDENCIES ON GATE BIAS AND OXIDE THICKNESS
Authors: RISTIC G GOLUBOVIC S PEJOVIC M
Citation: G. Ristic et al., P-CHANNEL METAL-OXIDE-SEMICONDUCTOR DOSIMETER FADING DEPENDENCIES ON GATE BIAS AND OXIDE THICKNESS, Applied physics letters, 66(1), 1995, pp. 88-89
TEMPERATURE AND GATE BIAS EFFECTS ON GAMMA-IRRADIATED AL-GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: PEJOVIC M GOLUBOVIC S RISTIC G ODALOVIC M
Citation: M. Pejovic et al., TEMPERATURE AND GATE BIAS EFFECTS ON GAMMA-IRRADIATED AL-GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, JPN J A P 1, 33(2), 1994, pp. 986-990
ANNEALING OF GAMMA-IRRADIATED AL-GATE NMOS TRANSISTORS
Authors: PEJOVIC M GOLUBOVIC S RISTIC G ODALOVIC M
Citation: M. Pejovic et al., ANNEALING OF GAMMA-IRRADIATED AL-GATE NMOS TRANSISTORS, Solid-state electronics, 37(1), 1994, pp. 215-216
THE ROLE OF INTERFACE TRAPS IN REBOUND MECHANISMS
Authors: GOLUBOVIC S RISTIC G PEJOVIC M DIMITRIJEV S
Citation: S. Golubovic et al., THE ROLE OF INTERFACE TRAPS IN REBOUND MECHANISMS, Physica status solidi. a, Applied research, 143(2), 1994, pp. 333-339
PMOS DOSIMETER WITH 2-LAYER GATE OXIDE OPERATED AT ZERO AND NEGATIVE BIAS
Authors: RISTIC G GOLUBOVIC S PEJOVIC M
Citation: G. Ristic et al., PMOS DOSIMETER WITH 2-LAYER GATE OXIDE OPERATED AT ZERO AND NEGATIVE BIAS, Electronics Letters, 30(4), 1994, pp. 295-296
SEPARATION OF IRRADIATION-INDUCED GATE OXIDE CHARGE AND INTERFACE D-TRAPS EFFECTS IN POWER VD-MOSFETS
Authors: STOJADINOVIC N DJORIC S GOLUBOVIC S DAVIDOVIC V
Citation: N. Stojadinovic et al., SEPARATION OF IRRADIATION-INDUCED GATE OXIDE CHARGE AND INTERFACE D-TRAPS EFFECTS IN POWER VD-MOSFETS, Electronics Letters, 30(23), 1994, pp. 1992-1993
A COMPARISON BETWEEN THERMAL ANNEALING AND UV-RADIATION ANNEALING OF GAMMA-IRRADIATED NMOS TRANSISTORS
Authors: PEJOVIC M RISTIC G GOLUBOVIC S
Citation: M. Pejovic et al., A COMPARISON BETWEEN THERMAL ANNEALING AND UV-RADIATION ANNEALING OF GAMMA-IRRADIATED NMOS TRANSISTORS, Physica status solidi. a, Applied research, 140(1), 1993, pp. 53-57
PMOS TRANSISTORS FOR DOSIMETRIC APPLICATION
Authors: RISTIC G GOLUBOVIC S PEJOVIC M
Citation: G. Ristic et al., PMOS TRANSISTORS FOR DOSIMETRIC APPLICATION, Electronics Letters, 29(18), 1993, pp. 1644-1646
Risultati: 1-16 |