Authors:
OJEDA F
CASTROGARCIA A
GOMEZALEIXANDRE C
ALBELLA JM
Citation: F. Ojeda et al., GROWTH-KINETICS OF CHEMICALLY VAPOR-DEPOSITED SIO2-FILMS FROM SILANE OXIDATION, Journal of materials research, 13(8), 1998, pp. 2308-2314
Authors:
GARCIA MM
JIMENEZ I
VAZQUEZ L
GOMEZALEIXANDRE C
ALBELLA JM
SANCHEZ O
TERMINELLO LJ
HIMPSEL FJ
Citation: Mm. Garcia et al., X-RAY-ABSORPTION SPECTROSCOPY AND ATOMIC-FORCE MICROSCOPY STUDY OF BIAS-ENHANCED NUCLEATION OF DIAMOND FILMS, Applied physics letters, 72(17), 1998, pp. 2105-2107
Authors:
SANCHEZGARRIDO O
GOMEZALEIXANDRE C
OLIAS JS
ALBELLA JM
HERNANDEZVELEZ M
GUTIERREZ FF
Citation: O. Sanchezgarrido et al., DIELECTRIC AND RAMAN-SPECTROSCOPY OF MWCVD DIAMOND THIN-FILMS, Journal of materials science. Materials in electronics, 7(4), 1996, pp. 297-303
Citation: A. Essafti et al., PREPARATION OF SI-N-B FILMS BY CVD TECHNIQUES - EFFECT OF SIH4 ADDITION TO B2H6 AND NH3 GAS-MIXTURES, DIAMOND AND RELATED MATERIALS, 5(3-5), 1996, pp. 580-583
Authors:
ESSAFTI A
GOMEZALEIXANDRE C
FIERRO JLG
FERNANDEZ M
ALBELLA JM
Citation: A. Essafti et al., CHEMICAL-VAPOR-DEPOSITION SYNTHESIS AND CHARACTERIZATION OF CO-DEPOSITED SILICON-NITROGEN-BORON MATERIALS, Journal of materials research, 11(10), 1996, pp. 2565-2574
Authors:
GOMEZALEIXANDRE C
SANCHEZ O
VAZQUEZ L
GARCIA MM
ALBELLA JM
Citation: C. Gomezaleixandre et al., INFLUENCE OF METHANE CONCENTRATION ON THE NUCLEATION AND GROWTH-STAGES IN DIAMOND FILM DEPOSITION, Physica status solidi. a, Applied research, 154(1), 1996, pp. 23-32
Authors:
GOMEZALEIXANDRE C
ESSAFTI A
FERNANDEZ M
FIERRO JLG
ALBELLA JM
Citation: C. Gomezaleixandre et al., INFLUENCE OF DIBORANE FLOW RATE ON THE STRUCTURE AND STABILITY OF CVDBORON-NITRIDE FILMS, Journal of physical chemistry, 100(6), 1996, pp. 2148-2153
Authors:
ALBELLA JM
GOMEZALEIXANDRE C
SANCHEZGARRIDO O
VAZQUEZ L
MARTINEZDUART JM
Citation: Jm. Albella et al., DEPOSITION OF DIAMOND AND BORON-NITRIDE FILMS BY PLASMA CHEMICAL-VAPOR-DEPOSITION, Surface & coatings technology, 70(2-3), 1995, pp. 163-174
Citation: Fj. Gomez et al., AMORPHOUS SIC LAYERS DEPOSITED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA- SPECTROSCOPIC ELLIPSOMETRIC MEASUREMENTS, Journal of non-crystalline solids, 191(1-2), 1995, pp. 164-173
Authors:
VAZQUEZ L
ALBELLA JM
SANCHEZ O
GOMEZALEIXANDRE C
MARTINEZDUART JM
Citation: L. Vazquez et al., NUCLEATION AND INITIAL-STAGES OF GROWTH OF DIAMOND FILMS ON SILICON, Scripta metallurgica et materialia, 31(8), 1994, pp. 1103-1108
Authors:
SANCHEZ O
GOMEZALEIXANDRE C
AGULLO F
ALBELLA JM
Citation: O. Sanchez et al., STUDY OF THE PLASMA DISCHARGES IN DIAMOND DEPOSITION WITH DIFFERENT O2 CONCENTRATIONS, DIAMOND AND RELATED MATERIALS, 3(9), 1994, pp. 1183-1187
Citation: Mj. Hernandez et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION AS A PROMISING TECHNIQUE FOR LOW-TEMPERATURE HARD COATINGS, Vacuum, 45(10-11), 1994, pp. 1023-1025
Authors:
GOMEZALEIXANDRE C
DIAZ D
ORGAZ F
ALBELLA JM
Citation: C. Gomezaleixandre et al., REACTION OF DIBORANE AND AMMONIA GAS-MIXTURES IN A CHEMICAL-VAPOR-DEPOSITION HOT-WALL REACTOR, Journal of physical chemistry, 97(42), 1993, pp. 11043-11046
Authors:
GOMEZALEIXANDRE C
SANCHEZ O
CASTRO A
ALBELLA JM
Citation: C. Gomezaleixandre et al., OPTICAL-EMISSION CHARACTERIZATION OF CH4+H2 DISCHARGES FOR DIAMOND DEPOSITION, Journal of applied physics, 74(6), 1993, pp. 3752-3757