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Results: 1-15 |
Results: 15
A hydrogen-transport-based interface-trap-generation model for hot-carriesreliability prediction
Authors: Pagey, MP Schrimpf, RD Galloway, KF Nicklaw, CJ Ikeda, S Kamohara, S
Citation: Mp. Pagey et al., A hydrogen-transport-based interface-trap-generation model for hot-carriesreliability prediction, IEEE ELEC D, 22(6), 2001, pp. 290-292
A generalized model for the lifetime of microelectronic components, applied to storage conditions
Authors: Wise, LJ Schrimpf, RD Parks, HG Galloway, KF
Citation: Lj. Wise et al., A generalized model for the lifetime of microelectronic components, applied to storage conditions, MICROEL REL, 41(2), 2001, pp. 317-322
Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves
Authors: Saigne, F Dusseau, L Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation: F. Saigne et al., Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves, IEEE NUCL S, 47(6), 2000, pp. 2244-2248
Defects and nanocrystals generated by Si implantation into a-SiO2
Authors: Nicklaw, CJ Pagey, MP Pantelides, ST Fleetwood, DM Schrimpf, RD Galloway, KF Wittig, JE Howard, BM Taw, E McNeil, WH Conley, JF
Citation: Cj. Nicklaw et al., Defects and nanocrystals generated by Si implantation into a-SiO2, IEEE NUCL S, 47(6), 2000, pp. 2269-2275
Total dose effects in composite nitride-oxide films
Authors: Lee, SC Raparla, A Li, YF Gasiot, G Schrimpf, RD Fleetwood, DM Galloway, KF Featherby, M Johnson, D
Citation: Sc. Lee et al., Total dose effects in composite nitride-oxide films, IEEE NUCL S, 47(6), 2000, pp. 2297-2304
Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs
Authors: Saigne, F Fesquet, J Gasiot, J Ecoffet, R Schrimpf, RD Galloway, KF
Citation: F. Saigne et al., Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs, IEEE NUCL S, 47(6), 2000, pp. 2329-2333
Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE
Authors: Cai, SJ Tang, YS Li, R Wei, YY Wong, L Chen, YL Wang, KL Chen, M Zhao, YF Schrimpf, RD Keay, JC Galloway, KF
Citation: Sj. Cai et al., Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE, IEEE DEVICE, 47(2), 2000, pp. 304-307
Ab initio calculations of H+ energetics in SiO2: Implications for transport
Authors: Bunson, PE Di Ventra, M Pantelides, ST Schrimpf, RD Galloway, KF
Citation: Pe. Bunson et al., Ab initio calculations of H+ energetics in SiO2: Implications for transport, IEEE NUCL S, 46(6), 1999, pp. 1568-1573
Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies
Authors: Lee, SC Zhao, YF Schrimpf, RD Neifeld, MA Galloway, KF
Citation: Sc. Lee et al., Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies, IEEE NUCL S, 46(6), 1999, pp. 1797-1803
Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides
Authors: Youk, GU Khare, PS Schrimpf, RD Massengill, LW Galloway, KF
Citation: Gu. Youk et al., Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides, IEEE NUCL S, 46(6), 1999, pp. 1830-1835
Total dose effects on power-MOSFET switching converters
Authors: Pizano, JE Ma, TH Attia, JO Schrimpf, RD Galloway, KF Witulski, AF
Citation: Je. Pizano et al., Total dose effects on power-MOSFET switching converters, MICROEL REL, 38(12), 1998, pp. 1935-1939
Space charge limited degradation of bipolar oxides at low electric fields
Authors: Witczak, SC Lacoe, RC Mayer, DC Fleetwood, DM Schrimpf, RD Galloway, KF
Citation: Sc. Witczak et al., Space charge limited degradation of bipolar oxides at low electric fields, IEEE NUCL S, 45(6), 1998, pp. 2339-2351
TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs
Authors: Milanowski, RJ Pagey, MP Massengill, LW Schrimpf, RD Wood, ME Offord, BW Graves, RJ Galloway, KF Nicklaw, CJ Kelley, EP
Citation: Rj. Milanowski et al., TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs, IEEE NUCL S, 45(6), 1998, pp. 2593-2599
Moderated degradation enhancement of lateral pnp transistors due to measurement bias
Authors: Witczak, SC Schrimpf, RD Barnaby, HJ Lacoe, RC Mayer, DC Galloway, KF Pease, RL Fleetwood, DM
Citation: Sc. Witczak et al., Moderated degradation enhancement of lateral pnp transistors due to measurement bias, IEEE NUCL S, 45(6), 1998, pp. 2644-2648
Annealing effects on multi-quantum well laser diodes after proton irradiation
Authors: Zhao, YF Schrimpf, RD Patwary, AR Neifeld, MA Al-Johani, AW Weller, RA Galloway, KF
Citation: Yf. Zhao et al., Annealing effects on multi-quantum well laser diodes after proton irradiation, IEEE NUCL S, 45(6), 1998, pp. 2826-2832
Risultati: 1-15 |