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Results: 1-25/89
Authors:
Damilano, B
Grandjean, N
Pernot, C
Massies, J
Citation: B. Damilano et al., Monolithic white light emitting diodes based on InGaN/GaN multiple-quantumwells, JPN J A P 2, 40(9AB), 2001, pp. L918-L920
Authors:
Nelson, DK
Yacobson, MA
Kagan, VD
Gil, B
Grandjean, N
Beaumont, B
Massies, J
Gibart, P
Citation: Dk. Nelson et al., Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells, PHYS SOL ST, 43(12), 2001, pp. 2321-2327
Authors:
Grandjean, N
Damilano, B
Massies, J
Citation: N. Grandjean et al., Group-III nitride quantum heterostructures grown by molecular beam epitaxy, J PHYS-COND, 13(32), 2001, pp. 6945-6960
Authors:
Nelson, D
Gil, B
Jacobson, MA
Kagan, VD
Grandjean, N
Beaumont, B
Massies, J
Gibart, P
Citation: D. Nelson et al., Impact ionization of excitons in an electric field in GaN, J PHYS-COND, 13(32), 2001, pp. 7043-7052
Authors:
Vezian, S
Massies, J
Semond, F
Grandjean, N
Citation: S. Vezian et al., Surface morphology of GaN grown by molecular beam epitaxy, MAT SCI E B, 82(1-3), 2001, pp. 56-58
Authors:
Siozade, L
Leymarie, J
Disseix, P
Vasson, A
Mihailovic, M
Grandjean, N
Leroux, M
Massies, J
Citation: L. Siozade et al., Modelling of absorption and emission spectra of InxGa1-xN, MAT SCI E B, 82(1-3), 2001, pp. 71-73
Authors:
Gallart, M
Morel, A
Taliercio, T
Lefebvre, P
Gil, B
Allegre, J
Mathieu, H
Grandjean, N
Massies, J
Grzegory, I
Porowsky, S
Citation: M. Gallart et al., Time-resolved spectroscopy of MBE-grown GaN/AlGaN hetero- and homo-epitaxial quantum wells, MAT SCI E B, 82(1-3), 2001, pp. 140-142
Authors:
Taliercio, T
Lefebvre, P
Morel, A
Gallart, M
Allegre, J
Gil, B
Mathieu, H
Grandjean, N
Massies, J
Citation: T. Taliercio et al., Optical properties of self-assembled InGaN/GaN quantum dots, MAT SCI E B, 82(1-3), 2001, pp. 151-155
Authors:
Morel, A
Taliercio, T
Lefebvre, P
Gallart, M
Gil, B
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: A. Morel et al., Confined exciton-polariton modes in a thin, homo-epitaxial, GaN film grownby molecular beam epitaxy, MAT SCI E B, 82(1-3), 2001, pp. 173-177
Authors:
Reverchon, JL
Huet, F
Poisson, MA
Duboz, JY
Damilano, B
Grandjean, N
Massies, J
Citation: Jl. Reverchon et al., Photoconductance measurements and Stokes shift in InGaN alloys, MAT SCI E B, 82(1-3), 2001, pp. 197-199
Authors:
Damilano, B
Grandjean, N
Massies, J
Citation: B. Damilano et al., InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum, MAT SCI E B, 82(1-3), 2001, pp. 224-226
Authors:
Dalmasso, S
Damilano, B
Grandjean, N
Massies, J
Leroux, M
Reverchon, JL
Duboz, JY
Citation: S. Dalmasso et al., Optoelectronic characterization of blue InGaN/GaN LEDS grown by MBE, MAT SCI E B, 82(1-3), 2001, pp. 256-258
Authors:
Neu, G
Teisseire, M
Lemasson, P
Lahreche, H
Grandjean, N
Semond, F
Beaumont, B
Grzegory, I
Porowski, S
Triboulet, R
Citation: G. Neu et al., Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors, PHYSICA B, 302, 2001, pp. 39-53
Authors:
Rogers, R
Grandjean, N
Tillbrook, CE
Vitacco, MJ
Sewell, KW
Citation: R. Rogers et al., Recent interview-based measures of competency to stand trial: A critical review augmented with research data, BEH SCI LAW, 19(4), 2001, pp. 503-518
Authors:
Lefebvre, P
Taliercio, T
Kalliakos, S
Morel, A
Zhang, XB
Gallart, M
Bretagnon, T
Gil, B
Grandjean, N
Damilano, B
Massies, J
Citation: P. Lefebvre et al., Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined Stark effect, PHYS ST S-B, 228(1), 2001, pp. 65-72
Authors:
Ochalski, TJ
Gil, B
Bigenwald, P
Bugajski, M
Wojcik, A
Lefebvre, P
Taliercio, T
Grandjean, N
Massies, J
Citation: Tj. Ochalski et al., Dual contribution to the Stokes shift in InGaN-GaN quantum wells, PHYS ST S-B, 228(1), 2001, pp. 111-114
Authors:
White, ME
O'Donnell, KP
Martin, RW
Deatcher, CJ
Damilano, B
Grandjean, N
Massies, J
Citation: Me. White et al., Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wellsand quantum boxes, PHYS ST S-B, 228(1), 2001, pp. 129-132
Authors:
Gucciardi, PG
Vinattieri, A
Colocci, M
Damilano, B
Grandjean, N
Semond, F
Massies, J
Citation: Pg. Gucciardi et al., Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots, PHYS ST S-B, 224(1), 2001, pp. 53-56
Authors:
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: N. Grandjean et al., GaN/AlGaN quantum wells for UV emission: heteroepitaxy versus homoepitaxy, SEMIC SCI T, 16(5), 2001, pp. 358-361
Authors:
Peyrade, D
Chen, Y
Manin-Ferlazzo, L
Lebib, A
Grandjean, N
Coquillat, D
Legros, R
Lascaray, JP
Citation: D. Peyrade et al., Fabrication of GaN photonic crystals for 400 nm wavelength, MICROEL ENG, 57-8, 2001, pp. 843-849
Authors:
Zamfirescu, M
Gil, B
Grandjean, N
Malpuech, G
Kavokin, A
Bigenwald, P
Massies, J
Citation: M. Zamfirescu et al., Extremely sharp dependence of the exciton oscillator strength on quantum-well width in the GaN/AlxGa1-xN system: The polarization field effect - art.no. 121304, PHYS REV B, 6412(12), 2001, pp. 1304
Authors:
Perlin, P
Gorczyca, I
Suski, T
Wisniewski, P
Lepkowski, S
Christensen, NE
Svane, A
Hansen, M
DenBaars, SP
Damilano, B
Grandjean, N
Massies, J
Citation: P. Perlin et al., Influence of pressure on the optical properties of InxGa1-xN epilayers andquantum structures - art. no. 115319, PHYS REV B, 6411(11), 2001, pp. 5319
Authors:
Shields, PA
Nicholas, RJ
Grandjean, N
Massies, J
Citation: Pa. Shields et al., Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319, PHYS REV B, 6324(24), 2001, pp. 5319
Authors:
Taliercio, T
Gallart, M
Lefebvre, P
Morel, A
Gil, B
Allegre, J
Grandjean, N
Massies, J
Grzegory, I
Porowski, S
Citation: T. Taliercio et al., Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlNquantum wells grown by molecular beam epitaxy, SOL ST COMM, 117(7), 2001, pp. 445-448
Authors:
Duboz, JY
Dua, L
Glastre, G
Legagneux, P
Massies, J
Semond, F
Grandjean, N
Citation: Jy. Duboz et al., Dielectric microcavity in GaN/Si, PHYS ST S-A, 183(1), 2001, pp. 35-39