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Results: 1-25/38
Authors:
HALLIN C
IVANOV IG
EGILSSON T
HENRY A
KORDINA O
JANZEN E
Citation: C. Hallin et al., THE MATERIAL QUALITY OF CVD-GROWN SIC USING DIFFERENT CARBON PRECURSORS, Journal of crystal growth, 183(1-2), 1998, pp. 163-174
Authors:
WAHAB Q
KIMOTO T
ELLISON A
HALLIN C
TUOMINEN M
YAKIMOVA R
HENRY A
BERGMAN JP
JANZEN E
Citation: Q. Wahab et al., A 3 KV SCHOTTKY-BARRIER DIODE IN 4H-SIC, Applied physics letters, 72(4), 1998, pp. 445-447
Authors:
HENRY A
IVANOV IG
EGILSSON T
HALLIN C
ELLISON A
KORDINA O
LINDEFELT U
JANZEN E
Citation: A. Henry et al., HIGH-QUALITY 4H-SIC GROWN ON VARIOUS SUBSTRATE ORIENTATIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1289-1292
Authors:
HALLIN C
KONSTANTINOV AO
PECZ B
KORDINA O
JANZEN E
Citation: C. Hallin et al., THE ORIGIN OF 3C POLYTYPE INCLUSIONS IN EPITAXIAL LAYERS OF SILICON-CARBIDE GROWN BY CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1297-1300
Authors:
ELLISON A
RADAMSON H
TUOMINEN M
MILITA S
HALLIN C
HENRY A
KORDINA O
TUOMI T
YAKIMOVA R
MADAR R
JANZEN E
Citation: A. Ellison et al., WAFER WARPAGE, CRYSTAL BENDING AND INTERFACE PROPERTIES OF 4H-SIC EPI-WAFERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1369-1373
Authors:
SON NT
SORMAN E
SINGH M
CHEN WM
HALLIN C
KORDINA O
MONEMAR B
LINDSTROM JL
JANZEN E
Citation: Nt. Son et al., DEEP LUMINESCENT CENTERS IN ELECTRON-IRRADIATED 6H SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1378-1380
Authors:
SON NT
SORMAN E
CHEN WM
HALLIN C
KORDINA O
MONEMAR B
JANZEN E
Citation: Nt. Son et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN 3C SIC EPITAXIAL LAYERS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1381-1384
Authors:
ROTTNER KH
SCHONER A
SAVAGE SM
FRISCHHOLZ M
HALLIN C
KORDINA O
JANZEN E
Citation: Kh. Rottner et al., 2.5 KV ION-IMPLANTED P(+)N DIODES IN 6H-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1485-1488
Authors:
KAKANAKOVAGEORGIEVA A
PASKOVA T
YAKIMOVA R
HALLIN C
SYVAJARVI M
TRIFONOVA EP
SURTCHEV M
JANZEN E
Citation: A. Kakanakovageorgieva et al., STRUCTURAL-PROPERTIES OF 6H-SIC EPILAYERS GROWN BY 2 DIFFERENT TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 345-348
Authors:
KORDINA O
HALLIN C
HENRY A
BERGMAN JP
IVANOV I
ELLISON A
SON NT
JANZEN E
Citation: O. Kordina et al., GROWTH OF SIC BY HOT-WALL CVD AND HTCVD, Physica status solidi. b, Basic research, 202(1), 1997, pp. 321-334
Authors:
HALLIN C
YAKIMOVA R
PECZ B
GEORGIEVA A
MARINOVA T
KASAMAKOVA L
KAKANAKOV R
JANZEN E
Citation: C. Hallin et al., IMPROVED NI OHMIC CONTACT ON N-TYPE 4H-SIC, Journal of electronic materials, 26(3), 1997, pp. 119-122
Authors:
SON NT
SORMAN E
CHEN WM
HALLIN C
KORDINA O
MONEMAR B
JANZEN E
LINDSTROM JL
Citation: Nt. Son et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDIES OF DEFECTS IN ELECTRON-IRRADIATED 3C SIC LAYERS, Physical review. B, Condensed matter, 55(5), 1997, pp. 2863-2866
Authors:
HALLIN C
OWMAN F
MARTENSSON P
ELLISON A
KONSTANTINOV A
KORDINA O
JANZEN E
Citation: C. Hallin et al., IN-SITU SUBSTRATE PREPARATION FOR HIGH-QUALITY SIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 181(3), 1997, pp. 241-253
Authors:
KONSTANTINOV AO
HALLIN C
PECZ B
KORDINA O
JANZEN E
Citation: Ao. Konstantinov et al., THE MECHANISM FOR CUBIC SIC FORMATION ON OFF-ORIENTED SUBSTRATES, Journal of crystal growth, 178(4), 1997, pp. 495-504
Authors:
GALECKAS A
GRIVICKAS V
LINNROS J
BLEICHNER H
HALLIN C
Citation: A. Galeckas et al., FREE-CARRIER ABSORPTION AND LIFETIME MAPPING IN 4H SIC EPILAYERS, Journal of applied physics, 81(8), 1997, pp. 3522-3525
Authors:
SON NT
SORMAN E
CHEN WM
BERGMAN JP
HALLIN C
KORDINA O
KONSTANTINOV AO
MONEMAR B
JANZEN E
HOFMANN DM
VOLM D
MEYER BK
Citation: Nt. Son et al., EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC, Journal of applied physics, 81(4), 1997, pp. 1929-1932
Authors:
GALECKAS A
LINNROS J
GRIVICKAS V
LINDEFELT U
HALLIN C
Citation: A. Galeckas et al., AUGER RECOMBINATION IN 4H-SIC - UNUSUAL TEMPERATURE BEHAVIOR, Applied physics letters, 71(22), 1997, pp. 3269-3271
Authors:
MARINOVA T
YAKIMOVA R
KRASTEV V
HALLIN C
JANZEN E
Citation: T. Marinova et al., INTERFACIAL REACTIONS AND OHMIC CONTACT FORMATION IN THE NI AL-6H SICSYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3252-3256
Authors:
HULTMAN L
LJUNGCRANTZ H
HALLIN C
JANZEN E
SUNDGREN JE
PECZ B
WALLENBERG LR
Citation: L. Hultman et al., GROWTH AND ELECTRONIC-PROPERTIES OF EPITAXIAL TIN THIN-FILMS ON 3C-SIC(001) AND 6H-SIC(0001) SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING, Journal of materials research, 11(10), 1996, pp. 2458-2462
Authors:
MARINOVA T
KRASTEV V
HALLIN C
YAKIMOVA R
JANZEN E
Citation: T. Marinova et al., INTERFACE CHEMISTRY AND ELECTRIC CHARACTERIZATION OF NICKEL METALLIZATION ON 6H-SIC, Applied surface science, 99(2), 1996, pp. 119-125
Authors:
HENRY A
HALLIN C
IVANOV IG
BERGMAN JP
KORDINA O
LINDEFELT U
JANZEN E
Citation: A. Henry et al., GA-BOUND EXCITONS IN 3C-SIC, 4H-SIC, AND 6H-SIC, Physical review. B, Condensed matter, 53(20), 1996, pp. 13503-13506
Authors:
OWMAN F
HALLIN C
MARTENSSON P
JANZEN E
Citation: F. Owman et al., REMOVAL OF POLISHING-INDUCED DAMAGE FROM 6H-SIC(0001) SUBSTRATES BY HYDROGEN ETCHING, Journal of crystal growth, 167(1-2), 1996, pp. 391-395
Authors:
IVANOV IG
HALLIN C
HENRY A
KORDINA O
JANZEN E
Citation: Ig. Ivanov et al., NITROGEN DOPING CONCENTRATION AS DETERMINED BY PHOTOLUMINESCENCE IN 4H-SIC AND 6H-SIC, Journal of applied physics, 80(6), 1996, pp. 3504-3508
Authors:
KONSTANTINOV AO
HALLIN C
KORDINA O
JANZEN E
Citation: Ao. Konstantinov et al., EFFECT OF VAPOR COMPOSITION ON POLYTYPE HOMOGENEITY OF EPITAXIAL SILICON-CARBIDE, Journal of applied physics, 80(10), 1996, pp. 5704-5712
Authors:
SON NT
SORMAN E
CHEN WM
SINGH M
HALLIN C
KORDINA O
MONEMAR B
JANZEN E
LINDSTROM JL
Citation: Nt. Son et al., DOMINANT RECOMBINATION CENTER IN ELECTRON-IRRADIATED 3C SIC, Journal of applied physics, 79(7), 1996, pp. 3784-3786