AAAAAA

   
Results: 1-25 | 26-50 | 51-67 |
Results: 51-67/67
PHASE MANIPULATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS
Authors: LARSSON MI NI WX HANSSON GV
Citation: Mi. Larsson et al., PHASE MANIPULATION OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS, Europhysics letters, 27(7), 1994, pp. 513-518
STRAIN RELAXATION IN EPITAXIAL SI1-XGEX LAYERS DURING SOME SILICIDATION PROCESSES
Authors: NUR O SARDELA MR RADAMSON HH WILLANDER M HANSSON GV HATZIKONSTANTINIDOU S
Citation: O. Nur et al., STRAIN RELAXATION IN EPITAXIAL SI1-XGEX LAYERS DURING SOME SILICIDATION PROCESSES, Physica scripta. T, 54, 1994, pp. 294-296
RELATION BETWEEN ELECTRICAL ACTIVATION AND THE B-INDUCED STRAIN IN SIDETERMINED BY RECIPROCAL LATTICE MAPPING
Authors: SARDELA MR RADAMSON HH EKBERG JO SUNDGREN JE HANSSON GV
Citation: Mr. Sardela et al., RELATION BETWEEN ELECTRICAL ACTIVATION AND THE B-INDUCED STRAIN IN SIDETERMINED BY RECIPROCAL LATTICE MAPPING, Semiconductor science and technology, 9(6), 1994, pp. 1272-1275
TEMPERATURE-INDUCED MANIPULATION OF NUCLEATION DURING SI AND GE MOLECULAR-BEAM EPITAXY
Authors: LARSSON MI NI WX HANSSON GV
Citation: Mi. Larsson et al., TEMPERATURE-INDUCED MANIPULATION OF NUCLEATION DURING SI AND GE MOLECULAR-BEAM EPITAXY, Physical review. B, Condensed matter, 50(8), 1994, pp. 5335-5344
INITIAL-STAGES OF SI-MOLECULAR BEAM EPITAXY ON SI(111) STUDIED WITH REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY MEASUREMENTS AND MONTE-CARLO SIMULATIONS
Authors: LARSSON MI HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, INITIAL-STAGES OF SI-MOLECULAR BEAM EPITAXY ON SI(111) STUDIED WITH REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY MEASUREMENTS AND MONTE-CARLO SIMULATIONS, Surface science, 321(3), 1994, pp. 255-260
GROWTH, ELECTRICAL-PROPERTIES AND RECIPROCAL LATTICE MAPPING CHARACTERIZATION OF HEAVILY B-DOPED, HIGHLY STRAINED SILICON-MOLECULAR BEAM EPITAXIAL STRUCTURES
Authors: SARDELA MR RADAMSON HH EKBERG JO SUNDGREN JE HANSSON GV
Citation: Mr. Sardela et al., GROWTH, ELECTRICAL-PROPERTIES AND RECIPROCAL LATTICE MAPPING CHARACTERIZATION OF HEAVILY B-DOPED, HIGHLY STRAINED SILICON-MOLECULAR BEAM EPITAXIAL STRUCTURES, Journal of crystal growth, 143(3-4), 1994, pp. 184-193
CHARACTERIZATION OF HIGHLY SB-DOPED SI USING HIGH-RESOLUTION X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY
Authors: RADAMSON HH SARDELA MR HULTMAN L HANSSON GV
Citation: Hh. Radamson et al., CHARACTERIZATION OF HIGHLY SB-DOPED SI USING HIGH-RESOLUTION X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of applied physics, 76(2), 1994, pp. 763-767
HIGH-QUALITY SI SI1-XGEX LAYERED STRUCTURES GROWN USING A MASS-SPECTROMETRY CONTROLLED ELECTRON-BEAM EVAPORATION SYSTEM/
Authors: NI WX HENRY A LARSSON MI JOELSSON K HANSSON GV
Citation: Wx. Ni et al., HIGH-QUALITY SI SI1-XGEX LAYERED STRUCTURES GROWN USING A MASS-SPECTROMETRY CONTROLLED ELECTRON-BEAM EVAPORATION SYSTEM/, Applied physics letters, 65(14), 1994, pp. 1772-1774
GROWTH OF HIGH-QUALITY GE FILMS ON SI(111) USING SB AS SURFACTANT
Authors: LARSSON MI NI WX JOELSSON K HANSSON GV
Citation: Mi. Larsson et al., GROWTH OF HIGH-QUALITY GE FILMS ON SI(111) USING SB AS SURFACTANT, Applied physics letters, 65(11), 1994, pp. 1409-1411
DIRECT MEASUREMENTS OF LATTICE-PARAMETER VARIATIONS AND RELAXATION KINETICS IN STRAINED SI1-XGEX SI HETEROSTRUCTURES/
Authors: SARDELA MR HANSSON GV
Citation: Mr. Sardela et Gv. Hansson, DIRECT MEASUREMENTS OF LATTICE-PARAMETER VARIATIONS AND RELAXATION KINETICS IN STRAINED SI1-XGEX SI HETEROSTRUCTURES/, Applied physics letters, 65(11), 1994, pp. 1442-1444
STRAIN CHARACTERIZATION OF COSI2 N-SI0.9GE0.1/P-SI HETEROSTRUCTURES/
Authors: NUR O WILLANDER M RADAMSON HH SARDELA MR HANSSON GV PETERSSON CS MAEX K
Citation: O. Nur et al., STRAIN CHARACTERIZATION OF COSI2 N-SI0.9GE0.1/P-SI HETEROSTRUCTURES/, Applied physics letters, 64(4), 1994, pp. 440-442
ELECTRON-MOBILITY ENHANCEMENT IN SI USING DOUBLY DELTA-DOPED LAYERS
Authors: RADAMSON HH SARDELA MR NUR O WILLANDER M SERNELIUS BE NI WX HANSSON GV
Citation: Hh. Radamson et al., ELECTRON-MOBILITY ENHANCEMENT IN SI USING DOUBLY DELTA-DOPED LAYERS, Applied physics letters, 64(14), 1994, pp. 1842-1844
NEGATIVE DIFFERENTIAL RESISTANCE AT ROOM-TEMPERATURE IN DELTA-DOPED DIODES GROWN BY SI-MOLECULAR BEAM EPITAXY
Authors: SARDELA MR RADAMSON HH HANSSON GV
Citation: Mr. Sardela et al., NEGATIVE DIFFERENTIAL RESISTANCE AT ROOM-TEMPERATURE IN DELTA-DOPED DIODES GROWN BY SI-MOLECULAR BEAM EPITAXY, Applied physics letters, 64(13), 1994, pp. 1711-1713
METHOD TO CALCULATE SUBSTRATE-TEMPERATURE DURING INTERMITTENT RADIANTHEATING IN VACUUM
Authors: LARSSON MI HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, METHOD TO CALCULATE SUBSTRATE-TEMPERATURE DURING INTERMITTENT RADIANTHEATING IN VACUUM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(3), 1993, pp. 732-735
SYNCHRONIZATION OF NUCLEATION STUDIED WITH MONTE-CARLO SIMULATIONS AND APPLIED TO SI1-XGEX MOLECULAR-BEAM EPITAXY
Authors: LARSSON MI HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, SYNCHRONIZATION OF NUCLEATION STUDIED WITH MONTE-CARLO SIMULATIONS AND APPLIED TO SI1-XGEX MOLECULAR-BEAM EPITAXY, Surface science, 292(1-2), 1993, pp. 98-113
MONTE-CARLO SIMULATIONS OF GE SEGREGATION IN STRAINED SI AND SIGE ALLOYS
Authors: LARSSON MI HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, MONTE-CARLO SIMULATIONS OF GE SEGREGATION IN STRAINED SI AND SIGE ALLOYS, Surface science, 291(1-2), 1993, pp. 117-128
METHOD USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY TODETERMINE THE SOLID SOLUBILITY LIMIT FOR BORON IN SILICON AND SI1-XGEX LAYERS
Authors: LARSSON MI HANSSON GV
Citation: Mi. Larsson et Gv. Hansson, METHOD USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY TODETERMINE THE SOLID SOLUBILITY LIMIT FOR BORON IN SILICON AND SI1-XGEX LAYERS, Journal of crystal growth, 134(3-4), 1993, pp. 203-210
Risultati: 1-25 | 26-50 | 51-67 |