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Results: 1-25 | 26-39
Results: 1-25/39
ELECTRICAL AND OPTICAL CHARACTERISTICS OF N-TYPE-DOPED DISTRIBUTED BRAGG MIRRORS ON INP
Authors: DIAS IFL NABET B KOHL A BENCHIMOL JL HARMAND JC
Citation: Ifl. Dias et al., ELECTRICAL AND OPTICAL CHARACTERISTICS OF N-TYPE-DOPED DISTRIBUTED BRAGG MIRRORS ON INP, IEEE photonics technology letters, 10(6), 1998, pp. 763-765
TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF GAINAS ALGAINAS SUPERLATTICES/
Authors: TRONC P WANG G REID B MACIEJKO R HARMAND JC PALMIER JF SERMAGE B ROUSSIGNOL P
Citation: P. Tronc et al., TIME-RESOLVED PHOTOLUMINESCENCE STUDY OF GAINAS ALGAINAS SUPERLATTICES/, Superlattices and microstructures, 24(5), 1998, pp. 347-352
MILLIMETER-WAVE NEGATIVE DIFFERENTIAL CONDUCTANCE IN GAINAS ALINAS SEMICONDUCTOR SUPERLATTICES/
Authors: MINOT C SAHRI N LEPERSON H PALMIER JF HARMAND JC MEDUS JP ESNAULT JC
Citation: C. Minot et al., MILLIMETER-WAVE NEGATIVE DIFFERENTIAL CONDUCTANCE IN GAINAS ALINAS SEMICONDUCTOR SUPERLATTICES/, Superlattices and microstructures, 23(6), 1998, pp. 1323-1332
OPTICAL POLARIZATION RELAXATION IN INXGA1-XAS-BASED QUANTUM-WELLS - EVIDENCE OF THE INTERFACE SYMMETRY-REDUCTION EFFECT
Authors: GUETTLER T TRIQUES ALC VERVOORT L FERREIRA R ROUSSIGNOL P VOISIN P RONDI D HARMAND JC
Citation: T. Guettler et al., OPTICAL POLARIZATION RELAXATION IN INXGA1-XAS-BASED QUANTUM-WELLS - EVIDENCE OF THE INTERFACE SYMMETRY-REDUCTION EFFECT, Physical review. B, Condensed matter, 58(16), 1998, pp. 10179-10182
30-DEGREES-C CW OPERATION OF 0.52-MU-M INGAASP ALGAAS VERTICAL-CAVITYLASERS WITH IN-SITU BUILT-IN LATERAL CURRENT CONFINEMENT BY LOCALIZEDFUSION/
Authors: SYRBU AV IAKOVLEV VP BERSETH CA DEHAESE O RUDRA A KAPON E JACQUET J BOUCART J STARK C GABORIT F SAGNES I HARMAND JC RAJ R
Citation: Av. Syrbu et al., 30-DEGREES-C CW OPERATION OF 0.52-MU-M INGAASP ALGAAS VERTICAL-CAVITYLASERS WITH IN-SITU BUILT-IN LATERAL CURRENT CONFINEMENT BY LOCALIZEDFUSION/, Electronics Letters, 34(18), 1998, pp. 1744-1745
ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION VCSEL AT 1.48-MU-M WITH SB-BASED BRAGG REFLECTOR
Authors: UNGARO G HARMAND JC SAGNES I SERMAGE B DEBRAY JP MERIADEC C RIVERA T OUDAR JL RAJ R
Citation: G. Ungaro et al., ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION VCSEL AT 1.48-MU-M WITH SB-BASED BRAGG REFLECTOR, Electronics Letters, 34(14), 1998, pp. 1402-1404
IMPROVED REPRODUCIBILITY OF ALGAINAS LASER THRESHOLD BY INP SUBSTRATEDEOXIDATION UNDER PHOSPHORUS FLUX
Authors: HARMAND JC IDIARTALHOR E MOISON JM BARTHE F
Citation: Jc. Harmand et al., IMPROVED REPRODUCIBILITY OF ALGAINAS LASER THRESHOLD BY INP SUBSTRATEDEOXIDATION UNDER PHOSPHORUS FLUX, Journal of electronic materials, 26(5), 1997, pp. 9-12
POTENTIAL-INSERTED INGAAS-ALGAINAS SHALLOW QUANTUM-WELLS FOR ELECTROOPTICAL MODULATION AT 1.55 MU-M
Authors: GUETTLER T KREBS O DIAS IL HARMAND JC DEVAUX F VOISIN P
Citation: T. Guettler et al., POTENTIAL-INSERTED INGAAS-ALGAINAS SHALLOW QUANTUM-WELLS FOR ELECTROOPTICAL MODULATION AT 1.55 MU-M, Semiconductor science and technology, 12(6), 1997, pp. 729-732
BAND DISCONTINUITIES IN INXGA1-XAS-INP AND INP-ALYIN1-YAS HETEROSTRUCTURES - EVIDENCE OF NONCOMMUTATIVITY
Authors: SEIDEL W KREBS O VOISIN P HARMAND JC ARISTONE F PALMIER JF
Citation: W. Seidel et al., BAND DISCONTINUITIES IN INXGA1-XAS-INP AND INP-ALYIN1-YAS HETEROSTRUCTURES - EVIDENCE OF NONCOMMUTATIVITY, Physical review. B, Condensed matter, 55(4), 1997, pp. 2274-2279
2ND-HARMONIC GENERATION IN A DOUBLY RESONANT SEMICONDUCTOR MICROCAVITY
Authors: SIMONNEAU C DEBRAY JP HARMAND JC VIDAKOVIC P LOVERING DJ LEVENSON JA
Citation: C. Simonneau et al., 2ND-HARMONIC GENERATION IN A DOUBLY RESONANT SEMICONDUCTOR MICROCAVITY, Optics letters, 22(23), 1997, pp. 1775-1777
IMPACT OF INP HEMT EPILAYER DESIGNS ON SIDE GATING EFFECTS
Authors: BERTHELEMOT C VIGIER P DUMAS JM HARMAND JC
Citation: C. Berthelemot et al., IMPACT OF INP HEMT EPILAYER DESIGNS ON SIDE GATING EFFECTS, Microelectronics and reliability, 37(10-11), 1997, pp. 1683-1686
MOLECULAR-BEAM EPITAXY OF ALGAASSB SYSTEM FOR 1.55 MU-M BRAGG MIRRORS
Authors: HARMAND JC KOHL A JUHEL H LEROUX G
Citation: Jc. Harmand et al., MOLECULAR-BEAM EPITAXY OF ALGAASSB SYSTEM FOR 1.55 MU-M BRAGG MIRRORS, Journal of crystal growth, 175, 1997, pp. 372-376
ALGAASSB ALASSB MICROCAVITY DESIGNED FOR 1.55-MU-M AND GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: KOHL A HARMAND JC OUDAR JL RAO EVK KUSZELEWICZ R DELPON EL
Citation: A. Kohl et al., ALGAASSB ALASSB MICROCAVITY DESIGNED FOR 1.55-MU-M AND GROWN BY MOLECULAR-BEAM EPITAXY/, Electronics Letters, 33(8), 1997, pp. 708-710
HIGH REFLECTIVITY, LOW-RESISTANCE TE DOPED ALGAASSB ALASSB BRAGG MIRROR/
Authors: DIAS IFL NABET B KOHL A HARMAND JC
Citation: Ifl. Dias et al., HIGH REFLECTIVITY, LOW-RESISTANCE TE DOPED ALGAASSB ALASSB BRAGG MIRROR/, Electronics Letters, 33(8), 1997, pp. 716-717
HIGH-POWER SATURATION, POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATOR WITH SPIKED SHALLOW WELLS
Authors: DEVAUX F HARMAND JC DIAS IFL GUETTLER T KREBS O VOISIN P
Citation: F. Devaux et al., HIGH-POWER SATURATION, POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATOR WITH SPIKED SHALLOW WELLS, Electronics Letters, 33(2), 1997, pp. 161-163
CHARACTERIZATION OF ELECTRICAL DAMAGE-INDUCED BY CH4 H-2 REACTIVE IONETCHING OF MOLECULAR-BEAM EPITAXIAL INALAS/
Authors: ACHOUCHE M CLEI A HARMAND JC
Citation: M. Achouche et al., CHARACTERIZATION OF ELECTRICAL DAMAGE-INDUCED BY CH4 H-2 REACTIVE IONETCHING OF MOLECULAR-BEAM EPITAXIAL INALAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2555-2566
(NH4)(2)S-X PREEPITAXIAL TREATMENT FOR GAAS CHEMICAL BEAM EPITAXY REGROWTH
Authors: SIK H DRIAD R LEGAY P JUHEL M HARMAND JC LAUNAY P ALEXANDRE F
Citation: H. Sik et al., (NH4)(2)S-X PREEPITAXIAL TREATMENT FOR GAAS CHEMICAL BEAM EPITAXY REGROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 147-151
A STUDY OF SIDE GATE TEST STRUCTURES IN INALAS INGAAS HEMTS FOR OPTOELECTRONIC CIRCUIT APPLICATIONS/
Authors: BERTHELEMOT C FARRENQ A VIGIER P DUMAS JM CLEI A PALLA R HARMAND JC
Citation: C. Berthelemot et al., A STUDY OF SIDE GATE TEST STRUCTURES IN INALAS INGAAS HEMTS FOR OPTOELECTRONIC CIRCUIT APPLICATIONS/, Quality and reliability engineering international, 12(4), 1996, pp. 321-327
SHORT-PERIOD SUPERLATTICES UNDER HYDROSTATIC-PRESSURE
Authors: GASSOT P DMOWSKI L EREMETS M ARISTONE F GOUTIERS B GAUFFIER JL MAUDE DK PALMIER JF PORTAL JC HARMAND JC MOLLOT F
Citation: P. Gassot et al., SHORT-PERIOD SUPERLATTICES UNDER HYDROSTATIC-PRESSURE, Solid-state electronics, 40(1-8), 1996, pp. 185-189
INVESTIGATION OF LOW-POWER ALL-OPTICAL BISTABILITY IN AN INGAAS-INALAS SUPERLATTICE
Authors: COUTURIER J HARMAND JC VOISIN P
Citation: J. Couturier et al., INVESTIGATION OF LOW-POWER ALL-OPTICAL BISTABILITY IN AN INGAAS-INALAS SUPERLATTICE, Solid-state electronics, 40(1-8), 1996, pp. 453-457
REFLECTION GAIN UP TO 6 DB AT 65 GHZ IN GAINAS ALINAS SUPERLATTICE OSCILLATORS/
Authors: PALMIER JF MINOT C LEPERSON H HARMAND JC BOUADMA N ESNAULT JC ARQUEY D HELIOT F MEDUS JP
Citation: Jf. Palmier et al., REFLECTION GAIN UP TO 6 DB AT 65 GHZ IN GAINAS ALINAS SUPERLATTICE OSCILLATORS/, Electronics Letters, 32(16), 1996, pp. 1506-1507
PROPOSAL AND DEMONSTRATION OF A SYMMETRICAL NPIPN ELECTROABSORPTION MODULATOR
Authors: DEVAUX F HARMAND JC BOUADMA N CARRE M
Citation: F. Devaux et al., PROPOSAL AND DEMONSTRATION OF A SYMMETRICAL NPIPN ELECTROABSORPTION MODULATOR, IEEE photonics technology letters, 7(7), 1995, pp. 748-750
MONOLITHIC INTEGRATION ON INP OF A WANNIER-STARK MODULATOR WITH A STRAINED MQW DFB 1.55-MU-M LASER
Authors: ALLOVON M FOUCHET S HARMAND JC OUGAZZADEN A ROSE B GLOUKHIAN A DEVAUX F
Citation: M. Allovon et al., MONOLITHIC INTEGRATION ON INP OF A WANNIER-STARK MODULATOR WITH A STRAINED MQW DFB 1.55-MU-M LASER, IEEE photonics technology letters, 7(2), 1995, pp. 185-187
OBSERVATION OF THE WANNIER-STARK LADDERS ASSOCIATED TO THE LIGHT-HOLEGROUND-STATE AND TO THE HEAVY-HOLE FIRST EXCITED-STATE IN GAINAS ALGAINAS SUPERLATTICES/
Authors: WANG G DEMORY R TRONC P DEPEYROT J MELLITI R HARMAND JC PALMIER JF KOCHERESHKO VP PLATONOV AV
Citation: G. Wang et al., OBSERVATION OF THE WANNIER-STARK LADDERS ASSOCIATED TO THE LIGHT-HOLEGROUND-STATE AND TO THE HEAVY-HOLE FIRST EXCITED-STATE IN GAINAS ALGAINAS SUPERLATTICES/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1763-1768
ELECTROABSORPTION MODULATORS FOR HIGH-BIT-RATE OPTICAL COMMUNICATIONS- COMPARISON OF STRAINED INGAAS INALAS AND INGAASP/INGAASP/
Authors: DEVAUX F CHELLES S OUGAZZADEN A MIRCEA A HARMAND JC
Citation: F. Devaux et al., ELECTROABSORPTION MODULATORS FOR HIGH-BIT-RATE OPTICAL COMMUNICATIONS- COMPARISON OF STRAINED INGAAS INALAS AND INGAASP/INGAASP/, Semiconductor science and technology, 10(7), 1995, pp. 887-901
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