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Results: 26-50/82
Authors:
HENKEL A
DELAGE SL
DIFORTEPOISSON MA
CHARTIER E
BLANCK H
HARTNAGEL HL
Citation: A. Henkel et al., COLLECTOR-UP INGAP GAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH F(MAX)/, Electronics Letters, 33(7), 1997, pp. 634-636
Authors:
TIGINYANU IM
SCHWAB C
GROB JJ
PREVOT B
HARTNAGEL HL
VOGT A
IRMER G
MONECKE J
Citation: Im. Tiginyanu et al., ION-IMPLANTATION AS A TOOL FOR CONTROLLING THE MORPHOLOGY OF POROUS GALLIUM-PHOSPHIDE, Applied physics letters, 71(26), 1997, pp. 3829-3831
Authors:
MIAO J
TIGINYANU IM
HARTNAGEL HL
IRMER G
MONECKE J
WEISS BL
Citation: J. Miao et al., THE CHARACTERISTICS OF HIGH-RESISTANCE LAYERS PRODUCED IN N-GAAS USING MEV-NITROGEN IMPLANTATION FOR 3-DIMENSIONAL STRUCTURING, Applied physics letters, 70(7), 1997, pp. 847-849
Authors:
HARTNAGEL HL
Citation: Hl. Hartnagel, NEW DEVICES FOR MILLIMETER-WAVE APPLICATIONS, Annales des telecommunications, 52(3-4), 1997, pp. 130-133
Authors:
VOGT A
HARTNAGEL HL
MIEHE G
FUESS H
SCHMITZ J
Citation: A. Vogt et al., ELECTRICAL AND MICROSTRUCTURE ANALYSIS OF OHMIC CONTACTS TO P-TYPE AND N-TYPE GASB, GROWN BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3514-3519
Authors:
HORN J
VOGT A
ALLER I
HARTNAGEL HL
STEHLE M
Citation: J. Horn et al., HETEROSTRUCTURE INTERFACE CHARACTERIZATION USING SCANNING TUNNELING MICROSCOPE EXCITED TIME-RESOLVED LUMINESCENCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 820-823
Authors:
KLINGBEIL H
BEILENHOFF K
HARTNAGEL HL
Citation: H. Klingbeil et al., FINITE-DIFFERENCE ANALYSIS OF STRUCTURES CONSISTING OF ROUNDLY AND RECTANGULARLY SHAPED DOMAINS, IEEE microwave and guided wave letters, 6(8), 1996, pp. 295-297
Authors:
KLINGBEIL H
BEILENHOFF K
HARTNAGEL HL
Citation: H. Klingbeil et al., A LOCAL MESH REFINEMENT ALGORITHM FOR THE FDFD METHOD USING A POLYGONAL GRID, IEEE microwave and guided wave letters, 6(1), 1996, pp. 52-54
Authors:
KROZER V
RUPPERT M
SCHUSSLER M
FRICKE K
LEE WY
HARTNAGEL HL
Citation: V. Krozer et al., CALCULATION OF THE POWER CAPABILITIES OF HBT AMPLIFIERS BASED ON A NEW PHYSICAL HBT MODEL, International journal of microwave and millimeter-wave computer-aided engineering, 6(4), 1996, pp. 270-280
Authors:
ALLER I
HARTNAGEL HL
Citation: I. Aller et Hl. Hartnagel, SELECTIVE-AREA GROWTH OF INP BY PLASMA-ASSISTED SOLID-SOURCE EPITAXY, Journal of electronic materials, 25(3), 1996, pp. 421-424
ION-IMPLANTED NORMALLY-OFF GAAS BIPOLAR-MODE FET (BMFET) FOR APPLICATION IN A WIDE TEMPERATURE-RANGE
Authors:
COCORULLO G
DELLACORTE F
HARTNAGEL HL
SCHWEEGER G
Citation: G. Cocorullo et al., ION-IMPLANTED NORMALLY-OFF GAAS BIPOLAR-MODE FET (BMFET) FOR APPLICATION IN A WIDE TEMPERATURE-RANGE, Semiconductor science and technology, 11(5), 1996, pp. 776-782
Authors:
BELLONE S
RINALDI N
VITALE GF
COCORULLO G
SCHWEEGER G
HARTNAGEL HL
Citation: S. Bellone et al., A 2-DIMENSIONAL ANALYTICAL MODEL OF HOMOJUNCTION GAAS BMFET STRUCTURES, Solid-state electronics, 39(8), 1996, pp. 1221-1229
Authors:
FAVARO ML
TIGINYANU IM
TERLETSKY AI
HARTNAGEL HL
ZAPPIA M
AJO D
Citation: Ml. Favaro et al., PHOTOLUMINESCENCE STUDY OF GROWTH-RELATED AND PROCESSING-INDUCED DEFECTS IN INDIUM-PHOSPHIDE, Physica status solidi. a, Applied research, 156(2), 1996, pp. 523-532
Authors:
BRANDT M
KROZER V
SCHUSSLER M
BOCK KH
HARTNAGEL HL
Citation: M. Brandt et al., CHARACTERIZATION OF RELIABILITY OF COMPOUND SEMICONDUCTOR-DEVICES USING ELECTRICAL PULSES, Microelectronics and reliability, 36(11-12), 1996, pp. 1891-1894
Authors:
SCHUSSLER M
KROZER V
BOCK KH
BRANDT M
VECCI L
LOSI R
HARTNAGEL HL
Citation: M. Schussler et al., PULSED STRESS RELIABILITY INVESTIGATIONS OF SCHOTTKY DIODES AND HBTS, Microelectronics and reliability, 36(11-12), 1996, pp. 1907-1910
Authors:
KLINGBEIL H
BEILENHOFF K
HARTNAGEL HL
Citation: H. Klingbeil et al., FDFD FULL-WAVE ANALYSIS AND MODELING OF DIELECTRIC AND METALLIC LOSSES OF CPW SHORT CIRCUITS, IEEE transactions on microwave theory and techniques, 44(3), 1996, pp. 485-487
Authors:
DEHE A
HARTNAGEL HL
Citation: A. Dehe et Hl. Hartnagel, FREESTANDING ALGAAS THERMOPILES FOR IMPROVED INFRARED-SENSOR DESIGN, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1193-1199
Authors:
DEHE A
KROZER V
CHEN B
HARTNAGEL HL
Citation: A. Dehe et al., HIGH-SENSITIVITY MICROWAVE-POWER SENSOR FOR GAAS-MMIC IMPLEMENTATION, Electronics Letters, 32(23), 1996, pp. 2149-2150
Authors:
DUMKA DC
RIEMENSCHNEIDER R
MIAO JM
HARTNAGEL HL
Citation: Dc. Dumka et al., ELECTROCHEMICALLY FABRICATED HIGH-BARRIER SCHOTTKY CONTACTS ON N-INP AND THEIR APPLICATION FOR METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Journal of the Electrochemical Society, 143(6), 1996, pp. 1945-1948
Authors:
SCHUSSLER M
STATZNER T
LIN CI
KROZER V
HORN J
HARTNAGEL HL
Citation: M. Schussler et al., ELECTROCHEMICAL DEPOSITION OF PD, TI, AND GE FOR APPLICATIONS IN GAASTECHNOLOGY, Journal of the Electrochemical Society, 143(4), 1996, pp. 73-75
Authors:
ALLER I
LANG C
SCHWEEGER G
HARTNAGEL HL
DOLT R
HOHENBERG G
Citation: I. Aller et al., GALLIUM-ARSENIDE PIEZOTRANSISTOR FOR DYNAMIC PRESSURE MEASUREMENTS ATHIGH-TEMPERATURE, Applied physics letters, 69(3), 1996, pp. 403-405
Authors:
DEHE A
HARTNAGEL HL
PAVLIDIS D
HONG K
KUPHAL E
Citation: A. Dehe et al., PROPERTIES OF INGAAS INP THERMOELECTRIC AND SURFACE-BULK MICROMACHINED INFRARED-SENSORS/, Applied physics letters, 69(20), 1996, pp. 3039-3041
Authors:
STEHLE M
BISCHOFF M
PAGNIA H
HORN J
MARX N
WEISS BL
HARTNAGEL HL
Citation: M. Stehle et al., TIME-RESOLVED LUMINESCENCE MEASUREMENTS ON GAAS HOMOSTRUCTURES USING PULSE EXCITATION OF A SCANNING TUNNELING MICROSCOPE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 305-307
Authors:
DEHE A
FRICKE K
MUTAMBA K
HARTNAGEL HL
Citation: A. Dehe et al., A PIEZORESISTIVE GAAS PRESSURE SENSOR WITH GAAS ALGAAS MEMBRANE TECHNOLOGY/, Journal of micromechanics and microengineering, 5(2), 1995, pp. 139-142
Authors:
DEHE A
FRICKE K
HARTNAGEL HL
Citation: A. Dehe et al., INFRARED THERMOPILE SENSOR-BASED ON ALGAAS-GAAS MICROMACHINING, Sensors and actuators. A, Physical, 47(1-3), 1995, pp. 432-436