Authors:
LI YP
MARSH CD
NEJIM A
CHATER RJ
KILNER JA
HEMMENT PLF
Citation: Yp. Li et al., SIMOX - PROCESSING, LAYER PARAMETERS DESIGN, AND DEFECTS CONTROL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 479-483
Authors:
CRISTIANO F
ZHANG JP
WILSON RJ
GILLIN WP
HEMMENT PLF
Citation: F. Cristiano et al., CONTROL OF DEFECTS IN C-PHASE REGROWTH(, GE+, AND ER+ IMPLANTED SI USING POST AMORPHIZATION AND SOLID), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 265-270
Authors:
ZHANG JP
HEMMENT PLF
CASTLE JE
LIU HD
WATTS JF
KUBIAK RA
NEWSTEAD SM
WHALL TE
PARKER EHC
Citation: Jp. Zhang et al., THERMODYNAMIC BEHAVIOR OF GEO2 FORMED BY OXYGEN IMPLANTATION INTO RELAXED SI0.5GE0.5 ALLOY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 281-285
Authors:
LIU P
ZHOU ZY
LIN CL
ZOU SC
ZHANG RJ
LI BZ
HEMMENT PLF
Citation: P. Liu et al., GROWTH OF EPITAXIAL COSI2 ON SIMOX MATERIAL BY A SOLID-PHASE REACTIONOF DEPOSITED TIN CO/TI LAYERS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 352-355
Authors:
KOMODA T
KELLY J
CRISTIANO F
NEJIM A
HEMMENT PLF
HOMEWOOD KP
GWILLIAM R
MYNARD JE
SEALY BJ
Citation: T. Komoda et al., VISIBLE PHOTOLUMINESCENCE AT ROOM-TEMPERATURE FROM MICROCRYSTALLINE SILICON PRECIPITATES IN SIO2 FORMED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 387-391
Citation: Yh. Yu et al., OPTICAL CHARACTERIZATION OF DOPED TOP LAYERS IN SOI STRUCTURES FORMEDBY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 452-456
Authors:
XIN HP
LIN CL
ZHU SY
ZOU SC
SHI XH
ZHU H
HEMMENT PLF
Citation: Hp. Xin et al., FORMATION OF BURIED CARBON NITRIDE BY HIGH-DOSE NITROGEN IMPLANTATIONINTO CARBON THIN-FILM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(3), 1995, pp. 309-312
Authors:
HATZOPOULOS N
PANKNIN D
FUKAREK W
SKORUPA W
SIAPKAS DI
HEMMENT PLF
Citation: N. Hatzopoulos et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF DOUBLE SIMOX STRUCTURES FORMED BY SEQUENTIAL HIGH-ENERGY OXYGEN IMPLANTATION INTO SILICON, Microelectronic engineering, 28(1-4), 1995, pp. 415-418
Citation: N. Hatzopoulos et al., OXIDE-GROWTH, REFRACTIVE-INDEX, AND COMPOSITION DEPTH PROFILES OF STRUCTURES FORMED BY 2-MEV OXYGEN IMPLANTATION INTO SILICON, Journal of applied physics, 77(2), 1995, pp. 577-586
Citation: Bj. Sealy et Plf. Hemment, ION-BEAM TECHNIQUES IN MICROELECTRONICS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 298-306
Authors:
LI YP
KILNER JA
CHATER RJ
NEJIM A
HEMMENT PLF
MARSH CD
BOOKER GR
Citation: Yp. Li et al., OXYGEN ISOTOPIC EXCHANGE DURING THE ANNEALING OF LOW-ENERGY SIMOX LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 236-242
Citation: Cl. Lin et al., FORMATION OF ALUMINUM NITRIDE AND SEGREGATION OF CU IMPURITY ATOMS INALUMINUM IMPLANTED BY HIGH-DOSE NITROGEN-IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 208-213
Authors:
ZHANG JP
WILSON RJ
HEMMENT PLF
CLAVERIE A
CRISTIANO F
SALLES P
WEN JQ
EVANS JH
PEAKER AR
PARKER GJ
Citation: Jp. Zhang et al., REGROWTH BEHAVIOR OF SI1-XGEX SI STRUCTURES FORMED BY GE+ ION-IMPLANTATION AND POST AMORPHIZATION/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 222-228
Citation: Zy. Shi et al., DOPANTS DIFFUSION IN A THIN-FILM SIMOX STRUCTURE AND ITS COMPUTER-SIMULATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 238-241
Authors:
GILES LF
MARSH CD
NEJIM A
HEMMENT PLF
BOOKER GR
Citation: Lf. Giles et al., CRYSTALLOGRAPHIC DEFECT STUDIES IN SIMOX MATERIAL THINNED BY SACRIFICIAL OXIDATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 242-247
Authors:
NEJIM A
MARSH CD
GILES LF
HEMMENT PLF
LI Y
CHATER RJ
KILNER JA
BOOKER GR
Citation: A. Nejim et al., AN INVESTIGATION OF THE ROLE OF THE TIME-AVERAGED ION-BEAM CURRENT-DENSITY UPON THE DEFECT DENSITIES IN THIN-FILM SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 248-253
Authors:
GEATCHES RM
REESON KJ
CRIDDLE AJ
WEBB RP
PEARSON PJ
HEMMENT PLF
NEJIM A
Citation: Rm. Geatches et al., NONDESTRUCTIVE CHARACTERIZATION OF SIMOX STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 258-264
Citation: Ja. Kilner et Plf. Hemment, MATERIAL ASPECTS OF ION-BEAM SYNTHESIS - PHASE-FORMATION AND MODIFICATION - PROCEEDINGS OF SYMPOSIUM G OF THE E-MRS 1993 SPRING MEETING - STRASBOURG, FRANCE, MAY 4-7, 1993, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 180000009-180000009
Authors:
LIN CL
ZHOU ZY
HEMMENT PLF
LI XQ
YANG GQ
ZHU WH
ZOU SC
Citation: Cl. Lin et al., GRAZING-ANGLE RBS AND CHANNELING ANALYSIS OF BF2+ IMPLANTATION DAMAGEIN SILICON, Physica status solidi. a, Applied research, 142(2), 1994, pp. 365-370
Citation: Lf. Giles et al., A NEW CHEMICAL ETCH FOR DEFECTS STUDIES IN VERY THIN-FILM (LESS-THAN 1000 ANGSTROM) SIMOX MATERIAL, Materials chemistry and physics, 35(2), 1993, pp. 129-133