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Results: 1-25/42
Authors:
STEUDE G
HOFMANN DM
MEYER BK
AMANO H
AKASAKI I
Citation: G. Steude et al., THE DEPENDENCE OF THE BAND-GAP ON ALLOY COMPOSITION IN STRAINED ALGANON GAN, Physica status solidi. b, Basic research, 205(1), 1998, pp. 7-8
Authors:
WIMBAUER T
BRANDT MS
BAYERL MW
REINACHER NM
STUTZMANN M
HOFMANN DM
MOCHIZUKI Y
MIZUTA M
Citation: T. Wimbauer et al., RECOMBINATION CENTERS IN GAAS AL0.4GA0.6AS HETEROSTRUCTURES INVESTIGATED BY OPTICALLY AND ELECTRICALLY DETECTED MAGNETIC-RESONANCE/, Physical review. B, Condensed matter, 58(8), 1998, pp. 4892-4902
Authors:
LEITER FH
HOFMANN DM
HOFSTAETTER A
MEYER BK
NIKITIN SI
Citation: Fh. Leiter et al., OPTICALLY DETECTED MAGNETIC-RESONANCE ON CR3+ CENTERS IN KZNF3, Solid state communications, 108(9), 1998, pp. 625-627
Authors:
WAGNER M
HOFMANN DM
DIRNSTORFER I
LAMPERT MD
KARG F
MEYER BK
Citation: M. Wagner et al., CHARACTERIZATION OF CUIN(GA)SE-2 THIN-FILMS - II - MAGNETOOPTICAL PROPERTIES OF CU-RICH AND IN-RICH LAYERS, Physica status solidi. a, Applied research, 168(1), 1998, pp. 153-161
Authors:
DIRNSTORFER I
WAGNER M
HOFMANN DM
LAMPERT MD
KARG F
MEYER BK
Citation: I. Dirnstorfer et al., CHARACTERIZATION OF CUIN(GA)SE-2 THIN-FILMS - II - IN-RICH LAYERS, Physica status solidi. a, Applied research, 168(1), 1998, pp. 163-175
Authors:
WAGNER M
DIRNSTORFER I
HOFMANN DM
LAMPERT MD
KARG F
MEYER BK
Citation: M. Wagner et al., CHARACTERIZATION OF CUIN(GA)SE-2 THIN-FILMS - I - CU-RICH LAYERS, Physica status solidi. a, Applied research, 167(1), 1998, pp. 131-142
Authors:
STEUDE G
HOFMANN DM
MEYER BK
AMANO H
AKASAKI I
Citation: G. Steude et al., THE RESIDUAL DONOR BINDING-ENERGY IN ALGAN EPITAXIAL LAYERS, Physica status solidi. a, Applied research, 165(2), 1998, pp. 3-4
Authors:
FISCHER S
STEUDE G
HOFMANN DM
KURTH F
ANDERS F
TOPF M
MEYER BK
BERTRAM F
SCHMIDT M
CHRISTEN J
ECKEY L
HOLST J
HOFFMANN A
MENSCHING B
RAUSCHENBACH B
Citation: S. Fischer et al., ON THE NATURE OF THE 3.41 EV LUMINESCENCE IN HEXAGONAL GAN, Journal of crystal growth, 190, 1998, pp. 556-560
Authors:
HOFMANN DM
HOFSTAETTER A
LEIB U
MEYER BK
COUNIO G
Citation: Dm. Hofmann et al., EPR AND ENDOR INVESTIGATIONS ON CDS-MN NANOCRYSTALS, Journal of crystal growth, 185, 1998, pp. 383-387
Authors:
MEYER BK
HOFSTAETTER A
LEIB U
HOFMANN DM
Citation: Bk. Meyer et al., THE TEMPERATURE-DEPENDENCE OF THE ELECTRON G-FACTOR IN CDTE, Journal of crystal growth, 185, 1998, pp. 1118-1122
Authors:
MEYER BK
HOFMANN DM
Citation: Bk. Meyer et Dm. Hofmann, CYCLOTRON-RESONANCE AND HOT-ELECTRON EFFECTS IN II-VI SEMICONDUCTORS, Physica status solidi. b, Basic research, 202(2), 1997, pp. 783-794
Authors:
HOFMANN DM
OETTINGER K
EFROS AL
MEYER BK
Citation: Dm. Hofmann et al., MAGNETIC-CIRCULAR-DICHROISM STUDY OF HEAVY-HOLE AND LIGHT-HOLE G-FACTORS IN INXGA1-XAS INP QUANTUM-WELLS/, Physical review. B, Condensed matter, 55(15), 1997, pp. 9924-9928
Authors:
HOFFMANN A
ECKEY L
MAXIM P
HOLST JC
HEITZ R
HOFMANN DM
KOVALEV D
STEVDE G
VOLM D
MEYER BK
DETCHPROHM T
HIRAMATSU K
AMANO H
AKASAKI I
Citation: A. Hoffmann et al., DYNAMICAL STUDY OF THE YELLOW LUMINESCENCE BAND IN GAN, Solid-state electronics, 41(2), 1997, pp. 275-278
Authors:
CHEN WM
SON NT
JANZEN E
HOFMANN DM
MEYER BK
Citation: Wm. Chen et al., EFFECTIVE MASSES IN SIC DETERMINED BY CYCLOTRON-RESONANCE EXPERIMENTS, Physica status solidi. a, Applied research, 162(1), 1997, pp. 79-93
Authors:
MONTEIRO T
PEREIRA E
CORREIA MR
XAVIER C
HOFMANN DM
MEYER BK
FISCHER S
CREMADES A
PIQUERAS J
Citation: T. Monteiro et al., BROAD EMISSION BAND IN GAN EPITAXIAL LAYERS GROWN ON 6H-SIC AND SAPPHIRE, Journal of luminescence, 72-4, 1997, pp. 696-700
Authors:
SON NT
SORMAN E
CHEN WM
BERGMAN JP
HALLIN C
KORDINA O
KONSTANTINOV AO
MONEMAR B
JANZEN E
HOFMANN DM
VOLM D
MEYER BK
Citation: Nt. Son et al., EFFECTS OF MICROWAVE FIELDS ON RECOMBINATION PROCESSES IN 4H AND 6H SIC, Journal of applied physics, 81(4), 1997, pp. 1929-1932
Authors:
DRECHSLER M
MEYER BK
HOFMANN DM
RUPPERT P
HOMMEL D
Citation: M. Drechsler et al., OPTICALLY DETECTED CYCLOTRON-RESONANCE PROPERTIES OF HIGH-PURITY ZNSEEPITAXIAL LAYERS GROWN ON GAAS, Applied physics letters, 71(8), 1997, pp. 1116-1117
Authors:
CREMADES A
PIQUERAS J
XAVIER C
MONTEIRO T
PEREIRA E
MEYER BK
HOFMANN DM
FISCHER S
Citation: A. Cremades et al., CATHODOLUMINESCENCE STUDY OF GAN EPITAXIAL LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 230-234
Authors:
KOWALSKI B
OMLING P
MEYER BK
HOFMANN DM
HARLE V
SCHOLZ F
SOBKOWICZ P
Citation: B. Kowalski et al., OPTICALLY DETECTED SPIN-RESONANCE OF CONDUCTION-BAND ELECTRONS IN INGAAS INP QUANTUM-WELLS/, Semiconductor science and technology, 11(10), 1996, pp. 1416-1423
Authors:
HOFMANN DM
STADLER W
CHRISTMANN P
MEYER BK
Citation: Dm. Hofmann et al., DEFECTS IN CDTE AND CD1-XZNXTE, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 117-120
Authors:
VOLM D
MEYER BK
HOFMANN DM
CHEN WM
SON NT
PERSSON C
LINDEFELT U
KORDINA O
SORMAN E
KONSTANTINOV AO
MONEMAR B
JANZEN E
Citation: D. Volm et al., DETERMINATION OF THE ELECTRON EFFECTIVE-MASS TENSOR IN 4H SIC, Physical review. B, Condensed matter, 53(23), 1996, pp. 15409-15412
Authors:
CHRISTMANN P
KREISSL J
HOFMANN DM
MEYER BK
SCHWARZ R
BENZ KW
Citation: P. Christmann et al., VANADIUM IN CDTE, Journal of crystal growth, 161(1-4), 1996, pp. 259-263
Authors:
DRECHSLER M
HOFMANN DM
VOLM D
STADLER W
STEUDE G
MEYER BK
TAUDT W
SOLLNER J
HEUKEN M
Citation: M. Drechsler et al., ELECTRON MOBILITIES IN MOVPE-GROWN ZNSE QUANTUM-WELLS, Journal of crystal growth, 159(1-4), 1996, pp. 410-413
Authors:
DRECHSLER M
HOFMANN DM
MEYER BK
DETCHPROHM T
AMANO H
AKASAKI I
Citation: M. Drechsler et al., DETERMINATION OF THE CONDUCTION-BAND ELECTRON EFFECTIVE-MASS IN HEXAGONAL GAN, JPN J A P 2, 34(9B), 1995, pp. 1178-1179
Authors:
PEREIRA E
PEREIRA L
HOFMANN DM
STADLER W
MEYER BK
Citation: E. Pereira et al., EXCITED-LEVELS OF THE 2.56-EV EMISSION IN SYNTHETIC DIAMOND, Radiation effects and defects in solids, 135(1-4), 1995, pp. 641-646