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Results: 1-25 | 26-39
Results: 1-25/39
The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Liao, Y Winser, AJ Harrison, I Li, T Campion, RP Staddon, CR Davis, CS
Citation: Ct. Foxon et al., The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 203-206
Spatially resolved cathodoluminescence study of As doped GaN
Authors: Bell, A Ponce, FA Novikov, SV Foxon, CT Harrison, I
Citation: A. Bell et al., Spatially resolved cathodoluminescence study of As doped GaN, PHYS ST S-B, 228(1), 2001, pp. 207-211
On the origin of blue emission from As-doped GaN
Authors: Harrison, I Novikov, SV Li, T Campion, RP Staddon, CR Davis, CS Liao, Y Winser, AJ Foxon, CT
Citation: I. Harrison et al., On the origin of blue emission from As-doped GaN, PHYS ST S-B, 228(1), 2001, pp. 213-217
The influence of As on the optimum nitrogen to gallium ratio required to grow high quality GaN films by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Campion, RP Liao, Y Winser, AJ Harrison, I
Citation: Ct. Foxon et al., The influence of As on the optimum nitrogen to gallium ratio required to grow high quality GaN films by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 219-222
Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system
Authors: Novikov, SV Li, T Winser, AJ Campion, RP Staddon, CR Davic, CS Harrison, I Foxon, CT
Citation: Sv. Novikov et al., Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system, PHYS ST S-B, 228(1), 2001, pp. 223-225
The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers
Authors: Novikov, SV Li, T Winser, AJ Foxon, CT Campion, RP Staddon, CR Davis, CS Harrison, I Kovarsky, AP Ber, BJ
Citation: Sv. Novikov et al., The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers, PHYS ST S-B, 228(1), 2001, pp. 227-229
A study of the mechanisms responsible for blue emission from arsenic-dopedgallium nitride
Authors: Novikov, SV Winser, AJ Harrison, I Davis, CS Foxon, CT
Citation: Sv. Novikov et al., A study of the mechanisms responsible for blue emission from arsenic-dopedgallium nitride, SEMIC SCI T, 16(2), 2001, pp. 103-106
A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy
Authors: Marlafeka, S Bock, N Cheng, TS Novikov, SV Winser, AJ Harrison, I Foxon, CT Brown, PD
Citation: S. Marlafeka et al., A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy, J CRYST GR, 230(3-4), 2001, pp. 415-420
Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs
Authors: Xia, R Xu, H Harrison, I Beaument, B Andrianov, A Dods, SRA Morgan, JM Larkins, EC
Citation: R. Xia et al., Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs, J CRYST GR, 230(3-4), 2001, pp. 467-472
Blue emission from arsenic doped gallium nitride
Authors: Winser, AJ Harrison, I Novikov, SV Davis, CS Campion, R Cheng, TS Foxon, CT
Citation: Aj. Winser et al., Blue emission from arsenic doped gallium nitride, J CRYST GR, 230(3-4), 2001, pp. 527-532
Gallium nitride EGW-4: 2000 - Proceedings of the Fourth European Workshop on Gallium Nitride Nottingham, UK, 2-5 July 2000 - Preface
Authors: Orton, J Harrison, I Foxon, T
Citation: J. Orton et al., Gallium nitride EGW-4: 2000 - Proceedings of the Fourth European Workshop on Gallium Nitride Nottingham, UK, 2-5 July 2000 - Preface, J CRYST GR, 230(3-4), 2001, pp. IX-IX
Growth of GaNAs films by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Campion, RP Davis, CS Cheng, TS Winser, AJ Harrison, I
Citation: Ct. Foxon et al., Growth of GaNAs films by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 486-490
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate
Authors: Xu, HZ Bell, A Wang, ZG Okada, Y Kawabe, M Harrison, I Foxon, CT
Citation: Hz. Xu et al., Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate, J CRYST GR, 222(1-2), 2001, pp. 96-103
Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE
Authors: Xu, HZ Takahashi, K Wang, CX Wang, ZG Okada, Y Kawabe, M Harrison, I Foxon, CT
Citation: Hz. Xu et al., Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE, J CRYST GR, 222(1-2), 2001, pp. 110-117
Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN
Authors: Bell, A Harrison, I Korakakis, D Larkins, EC Hayes, JM Kuball, M Grandjean, N Massies, J
Citation: A. Bell et al., Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN, J APPL PHYS, 89(2), 2001, pp. 1070-1074
Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys
Authors: Laws, GM Larkins, EC Harrison, I Molloy, C Somerford, D
Citation: Gm. Laws et al., Improved refractive index formulas for the AlxGa1-xN and InyGa1-yN alloys, J APPL PHYS, 89(2), 2001, pp. 1108-1115
The nature of arsenic incorporation in GaN
Authors: Bell, A Ponce, FA Novikov, SV Foxon, CT Harrison, I
Citation: A. Bell et al., The nature of arsenic incorporation in GaN, APPL PHYS L, 79(20), 2001, pp. 3239-3241
Carrier relaxation dynamics for As defects in GaN
Authors: Gil, B Morel, A Taliercio, T Lefebvre, P Foxon, CT Harrison, I Winser, AJ Novikov, SV
Citation: B. Gil et al., Carrier relaxation dynamics for As defects in GaN, APPL PHYS L, 79(1), 2001, pp. 69-71
Low-temperature and photon-induced chemistry of nitrogen on Pt(111)
Authors: Zehr, R Solodukhin, A Haynie, BC French, C Harrison, I
Citation: R. Zehr et al., Low-temperature and photon-induced chemistry of nitrogen on Pt(111), J PHYS CH B, 104(14), 2000, pp. 3094-3106
A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy.
Authors: Bell, A Harrison, I Korakakis, D Larkins, EC Hayes, JM Kuball, M
Citation: A. Bell et al., A study of annealed GaN grown by molecular beam epitaxy using photoluminescence spectroscopy., MRS I J N S, 5, 2000, pp. NIL_655-NIL_660
17/18 November 1999: The night of the Leonids
Authors: Jehn, R Landgraf, M Flury, W Harrison, I Koschny, D Zender, J
Citation: R. Jehn et al., 17/18 November 1999: The night of the Leonids, ESA B, (101), 2000, pp. 114-115
An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy
Authors: Bell, A Harrison, I Cheng, TS Korakakis, D Foxon, CT Novikov, S Ber, BY Kudriavtsev, YA
Citation: A. Bell et al., An investigation into the origin of the 3.424 eV peak in the low-temperature photoluminescence of GaN grown by molecular beam epitaxy, SEMIC SCI T, 15(8), 2000, pp. 789-793
The implications of spontaneous polarization effects for carrier transportmeasurements in GaN
Authors: Harris, JJ Lee, KJ Webb, JB Tang, H Harrison, I Flannery, LB Cheng, TS Foxon, CT
Citation: Jj. Harris et al., The implications of spontaneous polarization effects for carrier transportmeasurements in GaN, SEMIC SCI T, 15(4), 2000, pp. 413-417
Photodesorption of molecular nitrogen from Pt(111)
Authors: Zehr, R French, C Haynie, B Solodukhin, A Harrison, I
Citation: R. Zehr et al., Photodesorption of molecular nitrogen from Pt(111), SURF SCI, 451(1-3), 2000, pp. 76-81
Arsenic-doped GaN grown by molecular beam epitaxy
Authors: Foxon, CT Novikov, SV Cheng, TS Davis, CS Campion, RP Winser, AJ Harrison, I
Citation: Ct. Foxon et al., Arsenic-doped GaN grown by molecular beam epitaxy, J CRYST GR, 219(4), 2000, pp. 327-334
Risultati: 1-25 | 26-39