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ENDERBY JE
RAMAKRISHNAN TV
JOHNSTON RL
ALEXANDROV AS
VONLOHNEYSEN H
COLEMAN P
MCGREEVY RL
IYE Y
RAO CNR
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KIDO G
OHNO M
MIURA N
ENDO A
KATO M
KATSUMOTO S
IYE Y
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Authors:
OIWA A
KATSUMOTO S
ENDO A
HIRASAWA M
IYE Y
MATSUKURA F
SHEN A
SUGAWARA Y
OHNO H
Citation: A. Oiwa et al., LOW-TEMPERATURE CONDUCTION AND GIANT NEGATIVE MAGNETORESISTANCE IN III-V-BASED DILUTED MAGNETIC SEMICONDUCTOR - (GA,MN)AS GAAS/, Physica. B, Condensed matter, 251, 1998, pp. 775-779
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TAKAMASU T
KIDO G
OHNO M
MIURA N
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KATO M
KATSUMOTO S
IYE Y
Citation: T. Takamasu et al., EFFECTS OF SKYRMION EXCITATIONS ON THE TEMPERATURE-DEPENDENCE OF DIAGONAL RESISTIVITY AT NU=1 QUANTUM HALL REGIME, Physica. B, Condensed matter, 246, 1998, pp. 12-15
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KATSUMOTO S
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HIRASAWA M
IYE Y
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MATSUKURA F
SHEN A
SUGAWARA Y
Citation: A. Oiwa et al., GIANT NEGATIVE MAGNETORESISTANCE OF (GA,MN)AS GAAS IN THE VICINITY OFA METAL-INSULATOR-TRANSITION/, Physica status solidi. b, Basic research, 205(1), 1998, pp. 167-171
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HUSSEY NE
KIBUNE M
NAKAGAWA H
MIURA N
IYE Y
TAKAGI H
ADACHI S
TANABE K
Citation: Ne. Hussey et al., MAGNETIC-FIELD-INDUCED DIMENSIONAL CROSSOVER IN THE NORMAL-STATE OF YBA2CU4O8, Physical review letters, 80(13), 1998, pp. 2909-2912
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MATSUKURA F
OIWA A
SHEN A
SUGAWARA Y
AKIBA N
KUROIWA T
OHNO H
ENDO A
KATSUMOTO S
IYE Y
Citation: F. Matsukura et al., GROWTH AND PROPERTIES OF (GA, MN) AS - A NEW III-V DILUTED MAGNETIC SEMICONDUCTOR, Applied surface science, 114, 1997, pp. 178-182
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MATSUKURA F
SUGAWARA Y
KUROIWA T
OHNO H
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ENDO A
KATSUMOTO S
IYE Y
Citation: A. Shen et al., EPITAXY AND PROPERTIES OF INMNAS ALGASB DILUTED MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES/, Applied surface science, 114, 1997, pp. 183-188
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OHNO H
MATSUKURA F
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SUGAWARA Y
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KOSHIHARA S
OIWA A
HIRASAWA M
KATSUMOTO S
IYE Y
URANO C
TAKAGI H
MUNEKATA H
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SHEN A
OHNO H
MATSUKURA F
SUGAWARA Y
AKIBA N
KUROIWA T
OIWA A
ENDO A
KATSUMOTO S
IYE Y
Citation: A. Shen et al., EPITAXY OF (GA, MN)AS, A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS, Journal of crystal growth, 175, 1997, pp. 1069-1074