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Results: 1-25 | 26-26
Results: 1-25/26
EFFECT OF A DEEP-LEVEL TRAP ON HOLE TRANSPORT IN IN0.5AL0.5AS IN0.5GA0.5AS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS/
Authors: LEE KJ JOHNSON FG JOHNSON WB KIM J LEE CH
Citation: Kj. Lee et al., EFFECT OF A DEEP-LEVEL TRAP ON HOLE TRANSPORT IN IN0.5AL0.5AS IN0.5GA0.5AS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1808-1811
USE OF ATOMIC-FORCE MICROSCOPY FOR ANALYSIS OF HIGH-PERFORMANCE INGAASP INP SEMICONDUCTOR-LASERS WITH DRY-ETCHED FACETS/
Authors: WHALEY RD GOPALAN B DAGENAIS M GOMEZ RD JOHNSON FG AGARWALA S KING O STONE DR
Citation: Rd. Whaley et al., USE OF ATOMIC-FORCE MICROSCOPY FOR ANALYSIS OF HIGH-PERFORMANCE INGAASP INP SEMICONDUCTOR-LASERS WITH DRY-ETCHED FACETS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1007-1011
COMPACT MODE EXPANDED LASERS USING RESONANT COUPLING BETWEEN A 1.55-MU-M INGAASP TAPERED ACTIVE-REGION AND AN UNDERLYING COUPLING WAVE-GUIDE
Authors: SAINI SS VUSIRIKALA V WHALEY R JOHNSON FG STONE D
Citation: Ss. Saini et al., COMPACT MODE EXPANDED LASERS USING RESONANT COUPLING BETWEEN A 1.55-MU-M INGAASP TAPERED ACTIVE-REGION AND AN UNDERLYING COUPLING WAVE-GUIDE, IEEE photonics technology letters, 10(9), 1998, pp. 1232-1234
1.9-W QUASI-CW FROM A NEAR-DIFFRACTION-LIMITED 1.55-MU-M INGAASP-INP TAPERED LASER
Authors: CHO SH FOX S JOHNSON FG VUSIRIKALA V STONE D DAGENAIS M
Citation: Sh. Cho et al., 1.9-W QUASI-CW FROM A NEAR-DIFFRACTION-LIMITED 1.55-MU-M INGAASP-INP TAPERED LASER, IEEE photonics technology letters, 10(8), 1998, pp. 1091-1093
DETUNED LOADING EFFECT AND HIGH-SPEED MODULATION OF FIBER GRATING SEMICONDUCTOR-LASERS
Authors: FAN ZF HEIM PJS SONG JH HU Y JOHNSON FG STONE DR DAGENAIS M
Citation: Zf. Fan et al., DETUNED LOADING EFFECT AND HIGH-SPEED MODULATION OF FIBER GRATING SEMICONDUCTOR-LASERS, IEEE photonics technology letters, 10(12), 1998, pp. 1784-1786
BIAS INDEPENDENT HEAVY-HOLE AND LIGHT-HOLE DEGENERACY IN INGAAS INGAASP QUANTUM-WELLS/
Authors: SHEN H PAMULAPATI J ZHOU W DUTTA M JOHNSON FG
Citation: H. Shen et al., BIAS INDEPENDENT HEAVY-HOLE AND LIGHT-HOLE DEGENERACY IN INGAAS INGAASP QUANTUM-WELLS/, Applied physics letters, 72(6), 1998, pp. 683-685
1.55-MU-M INGAASP-INP LASER ARRAYS WITH INTEGRATED-MODE EXPANDERS FABRICATED USING A SINGLE EPITAXIAL-GROWTH
Authors: VUSIRIKALA V SAINI SS BARTOLO RE AGARWALA S WHALEY RD JOHNSON FG STONE DR DAGENAIS M
Citation: V. Vusirikala et al., 1.55-MU-M INGAASP-INP LASER ARRAYS WITH INTEGRATED-MODE EXPANDERS FABRICATED USING A SINGLE EPITAXIAL-GROWTH, IEEE journal of selected topics in quantum electronics, 3(6), 1997, pp. 1332-1343
AIR-BRIDGES, AIR-RAMPS, PLANARIZATION, AND ENCAPSULATION USING PYROLYTIC PHOTORESIST IN THE FABRICATION OF 3-DIMENSIONAL MICROSTRUCTURES
Authors: PORKOLAB GA CHEN YJ TABATABAEI SA AGARWALA S JOHNSON FG KING O DAGENAIS M FRIZZELL RE BEARD WT STONE DR
Citation: Ga. Porkolab et al., AIR-BRIDGES, AIR-RAMPS, PLANARIZATION, AND ENCAPSULATION USING PYROLYTIC PHOTORESIST IN THE FABRICATION OF 3-DIMENSIONAL MICROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 1961-1965
DEPENDENCE OF THE LINEWIDTH ENHANCEMENT FACTOR ON THE NUMBER OF COMPRESSIVELY STRAINED-QUANTUM-WELL IN LASERS
Authors: CHO SH LU CC HOVINEN M NAM K VUSIRIKALA V SONG JH JOHNSON FG STONE D DAGENAIS M
Citation: Sh. Cho et al., DEPENDENCE OF THE LINEWIDTH ENHANCEMENT FACTOR ON THE NUMBER OF COMPRESSIVELY STRAINED-QUANTUM-WELL IN LASERS, IEEE photonics technology letters, 9(8), 1997, pp. 1081-1083
WET-CHEMISTRY SURFACE-TREATMENT FOR DARK-CURRENT REDUCTION THAT PRESERVES LATERAL DIMENSIONS OF REACTIVE ION ETCHED GA0.47IN0.53AS P-I-N-DIODE PHOTODETECTORS
Authors: PORKOLAB GA CHEN YJ MERRITT SA TABATABAEI SA AGARWALA S JOHNSON FG KING O DAGENAIS M WILSON RA STONE DR
Citation: Ga. Porkolab et al., WET-CHEMISTRY SURFACE-TREATMENT FOR DARK-CURRENT REDUCTION THAT PRESERVES LATERAL DIMENSIONS OF REACTIVE ION ETCHED GA0.47IN0.53AS P-I-N-DIODE PHOTODETECTORS, IEEE photonics technology letters, 9(4), 1997, pp. 490-492
HIGH BUTT-COUPLING EFFICIENCY TO SINGLE-MODE FIBERS USING A 1.55-MU-MINGAASP LASER INTEGRATED WITH A TAPERED RIDGE MODE TRANSFORMER
Authors: VUSIRIKALA V SAINI SS BARTOLO RE WHALEY R AGARWALA S DAGENAIS M JOHNSON FG STONE D
Citation: V. Vusirikala et al., HIGH BUTT-COUPLING EFFICIENCY TO SINGLE-MODE FIBERS USING A 1.55-MU-MINGAASP LASER INTEGRATED WITH A TAPERED RIDGE MODE TRANSFORMER, IEEE photonics technology letters, 9(11), 1997, pp. 1472-1474
POLARIZATION-INSENSITIVE 1.55-MU-M OPTICAL AMPLIFIER WITH GAAS DELTA-STRAINED GA0.47IN0.53AS QUANTUM-WELLS
Authors: SEIFERTH F JOHNSON FG MERRITT SA FOX S WHALEY RD CHEN YJ DAGENAIS M STONE DR
Citation: F. Seiferth et al., POLARIZATION-INSENSITIVE 1.55-MU-M OPTICAL AMPLIFIER WITH GAAS DELTA-STRAINED GA0.47IN0.53AS QUANTUM-WELLS, IEEE photonics technology letters, 9(10), 1997, pp. 1340-1342
RESULTS OF RADIATION AND CONCOMITANT CONTINUOUS-INFUSION 5-FLUOROURACIL, AND CISPLATIN FOR ANAL CANCER
Authors: PALEOLOGO FP GOSWITZ MS SKIBBER JM ALLEN PK EVETTS PA PEARCE AN JOHNSON FG ABBRUZZESE J RICH TA JANJAN NA
Citation: Fp. Paleologo et al., RESULTS OF RADIATION AND CONCOMITANT CONTINUOUS-INFUSION 5-FLUOROURACIL, AND CISPLATIN FOR ANAL CANCER, International journal of radiation oncology, biology, physics, 39(2), 1997, pp. 202-202
SOLID SOURCE MBE GROWTH AND REGROWTH OF 1.55 MU-M WAVELENGTH GAINASP INP RIDGE LASERS/
Authors: JOHNSON FG KING O SEIFERTH F HORST S STONE DR WHALEY RD DAGENAIS M CHEN YJ
Citation: Fg. Johnson et al., SOLID SOURCE MBE GROWTH AND REGROWTH OF 1.55 MU-M WAVELENGTH GAINASP INP RIDGE LASERS/, Journal of crystal growth, 175, 1997, pp. 46-51
SINGLE-ANGLED-FACET LASER-DIODE FOR WIDELY TUNABLE EXTERNAL-CAVITY SEMICONDUCTOR-LASERS WITH HIGH SPECTRAL PURITY
Authors: HEIM PJS FAN ZF CHO SH NAM K DAGENAIS M JOHNSON FG LEAVITT R
Citation: Pjs. Heim et al., SINGLE-ANGLED-FACET LASER-DIODE FOR WIDELY TUNABLE EXTERNAL-CAVITY SEMICONDUCTOR-LASERS WITH HIGH SPECTRAL PURITY, Electronics Letters, 33(16), 1997, pp. 1387-1389
INGAAS INP PIN PHOTODIODE ARRAYS ON ALGAAS/GAAS WAVE-GUIDE FILMS BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/
Authors: HSU SH JOHNSON FG TABATABAEI SA AGARWALA S HRYNIEWICZ JV TOWNER FJ CHEN YJ STONE DR
Citation: Sh. Hsu et al., INGAAS INP PIN PHOTODIODE ARRAYS ON ALGAAS/GAAS WAVE-GUIDE FILMS BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Electronics Letters, 33(13), 1997, pp. 1171-1173
ETCH-MASK OF PYROLYTIC-PHOTORESIST THIN-FILM FOR SELF-ALIGNED FABRICATION OF SMOOTH AND DEEP FACETED 3-DIMENSIONAL MICROSTRUCTURES
Authors: PORKOLAB GA HSU SH HRYNIEWICZ JV LIN WH CHEN YJ AGARWALA S JOHNSON FG KING O DAGENAIS M STONE DR
Citation: Ga. Porkolab et al., ETCH-MASK OF PYROLYTIC-PHOTORESIST THIN-FILM FOR SELF-ALIGNED FABRICATION OF SMOOTH AND DEEP FACETED 3-DIMENSIONAL MICROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3650-3653
SOLID SOURCE MOLECULAR-BEAM EPITAXY OF LOW-THRESHOLD 1.55 MU-M WAVELENGTH GAINAS GAINASP/INP SEMICONDUCTOR-LASERS/
Authors: JOHNSON FG KING O SEIFERTH F STONE DR WHALEY RD DAGENAIS M CHEN YJ
Citation: Fg. Johnson et al., SOLID SOURCE MOLECULAR-BEAM EPITAXY OF LOW-THRESHOLD 1.55 MU-M WAVELENGTH GAINAS GAINASP/INP SEMICONDUCTOR-LASERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2753-2756
SIAMESE CELL FOR GROUP-V FLUX MEASUREMENTS, UNIFORM ARSENIDE PHOSPHIDE ALLOYS, AND QUATERNARY LASERS
Authors: WOOD CEC JOHNSON FG
Citation: Cec. Wood et Fg. Johnson, SIAMESE CELL FOR GROUP-V FLUX MEASUREMENTS, UNIFORM ARSENIDE PHOSPHIDE ALLOYS, AND QUATERNARY LASERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2180-2183
MANIFOLD ARSENIC AND PHOSPHORUS EFFUSION SOURCE FOR GAASP ALLOYS
Authors: WOOD CEC JOHNSON FG TABATABAEI SA
Citation: Cec. Wood et al., MANIFOLD ARSENIC AND PHOSPHORUS EFFUSION SOURCE FOR GAASP ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2325-2327
MOLECULAR-BEAM FLUX MEASUREMENTS AND EQUILIBRIA FOR AS-4, P-4, AS-2, P-2 AND ASP
Authors: WOOD CEC JOHNSON FG
Citation: Cec. Wood et Fg. Johnson, MOLECULAR-BEAM FLUX MEASUREMENTS AND EQUILIBRIA FOR AS-4, P-4, AS-2, P-2 AND ASP, Journal of applied physics, 78(7), 1995, pp. 4444-4448
PHOSPHORUS CRACKING EFFICIENCY AND FLUX TRANSIENTS FROM A VALVED EFFUSION CELL
Authors: JOHNSON FG WOOD CEC
Citation: Fg. Johnson et Cec. Wood, PHOSPHORUS CRACKING EFFICIENCY AND FLUX TRANSIENTS FROM A VALVED EFFUSION CELL, Journal of applied physics, 78(3), 1995, pp. 1664-1668
OPERATION OF A MOLECULAR-BEAM EPITAXY MACHINE EMPLOYING A VALVED SOLID PHOSPHORUS SOURCE
Authors: WICKS GW KOCH MW JOHNSON FG VARRIANO JA KOHNKE GE COLOMBO P
Citation: Gw. Wicks et al., OPERATION OF A MOLECULAR-BEAM EPITAXY MACHINE EMPLOYING A VALVED SOLID PHOSPHORUS SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1119-1121
TILTED SUPERLATTICE COMPOSITION PROFILE MEASURED BY PHOTOLUMINESCENCEAND RAMAN
Authors: JOHNSON FG OLMSTED BL CHEN S WICKS GW
Citation: Fg. Johnson et al., TILTED SUPERLATTICE COMPOSITION PROFILE MEASURED BY PHOTOLUMINESCENCEAND RAMAN, Journal of crystal growth, 127(1-4), 1993, pp. 812-815
RAMAN-STUDY OF AL0.54IN0.46P GAAS INTERFACES GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/
Authors: JOHNSON FG WICKS GW
Citation: Fg. Johnson et Gw. Wicks, RAMAN-STUDY OF AL0.54IN0.46P GAAS INTERFACES GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Applied physics letters, 63(17), 1993, pp. 2402-2404
Risultati: 1-25 | 26-26