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Results:
1-16
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Results: 16
Authors:
JOSHI AB
MANN RA
CHUNG L
CHO TH
MIN BW
KWONG DL
Citation: Ab. Joshi et al., REDUCTION OF RIE-DAMAGE BY N2O-ANNEAL OF THERMAL GATE OXIDE, IEEE transactions on semiconductor manufacturing, 11(3), 1998, pp. 495-500
Authors:
BLUNN GW
JOSHI AB
MINNS RJ
LIDGREN L
LILLEY P
RYD L
ENGELBRECHT E
WALKER PS
Citation: Gw. Blunn et al., WEAR IN RETRIEVED CONDYLAR KNEE ARTHROPLASTIES - A COMPARISON OF WEARIN DIFFERENT DESIGNS OF 280 RETRIEVED CONDYLAR KNEE PROSTHESES, The Journal of arthroplasty, 12(3), 1997, pp. 281-290
Authors:
JOSHI AB
NORTON MG
Citation: Ab. Joshi et Mg. Norton, THE INFLUENCE OF ANNEALING ON THE SURFACE-MORPHOLOGY OF SINGLE-CRYSTAL MGO, Applied surface science, 115(3), 1997, pp. 307-310
Authors:
NUMAIR J
JOSHI AB
MURPHY JCM
PORTER ML
HARDINGE K
Citation: J. Numair et al., TOTAL HIP-ARTHROPLASTY FOR CONGENITAL DYSPLASIA OR DISLOCATION OF THEHIP - SURVIVORSHIP ANALYSIS AND LONG-TERM RESULTS, Journal of bone and joint surgery. American volume, 79A(9), 1997, pp. 1352-1360
Authors:
JOSHI AB
LEE CM
MARKOVIC L
MURPHY JCM
HARDINGE K
Citation: Ab. Joshi et al., TOTAL KNEE ARTHROPLASTY AFTER PATELLECTOMY, Journal of bone and joint surgery. British volume, 76B(6), 1994, pp. 926-929
Authors:
JOSHI AB
KWONG DL
Citation: Ab. Joshi et Dl. Kwong, HOT-CARRIER EFFECTS ON ANALOG PERFORMANCE OF N-MOSFETS AND P-MOSFETS WITH OXYNITRIDE GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 41(8), 1994, pp. 1465-1467
Authors:
JOSHI AB
KWONG DL
Citation: Ab. Joshi et Dl. Kwong, EFFECTS OF AC HOT-CARRIER STRESS ON N-MOSFETS AND P-MOSFETS WITH OXYNITRIDE GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 671-674
Authors:
YOON GW
JOSHI AB
KWONG DL
MATHEWS VK
THAKUR RPS
FAZAN PC
Citation: Gw. Yoon et al., EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 347-351
Authors:
YOON GW
JOSHI AB
KIM J
KWONG DL
Citation: Gw. Yoon et al., HIGH-FIELD-INDUCED LEAKAGE IN ULTRATHIN N2O OXIDES, IEEE electron device letters, 14(5), 1993, pp. 231-233
Authors:
KIM J
JOSHI AB
YOON GW
KWONG DL
Citation: J. Kim et al., EFFECTS OF RESIDUAL SURFACE NITROGEN ON THE DIELECTRIC-BREAKDOWN CHARACTERISTICS OF REGROWN OXIDES, IEEE electron device letters, 14(5), 1993, pp. 265-267
Authors:
JOSHI AB
AHN J
KWONG DL
Citation: Ab. Joshi et al., OXYNITRIDE GATE DIELECTRICS FOR P(-POLYSILICON GATE MOS DEVICES()), IEEE electron device letters, 14(12), 1993, pp. 560-562
Authors:
JOSHI AB
KWONG DL
Citation: Ab. Joshi et Dl. Kwong, RELIABILITY ISSUES IN SUBMICRON MOSFETS WITH OXYNITRIDE GATE DIELECTRICS, Microelectronics and reliability, 33(11-12), 1993, pp. 1845-1866
Authors:
JOSHI AB
Citation: Ab. Joshi, DUNKEL DRAFT PROPOSALS AND INDIAN AGRICULTURE, Journal of Scientific & Industrial Research, 52(4), 1993, pp. 284-287
Authors:
JOSHI AB
YOON GW
KIM JH
LO GQ
KWONG DL
Citation: Ab. Joshi et al., HIGH-FIELD BREAKDOWN IN THIN OXIDES GROWN IN N2O AMBIENT, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1437-1445
Authors:
LO GQ
JOSHI AB
KWONG DL
Citation: Gq. Lo et al., RADIATION HARDNESS OF MOSFETS WITH N2O-NITRIDED GATE OXIDES, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1565-1567
Authors:
KIM J
JOSHI AB
LO GQ
KWONG DL
LEE S
Citation: J. Kim et al., ELECTRICAL-PROPERTIES OF SI-IMPLANTED GATE OXIDES, Electronics Letters, 29(1), 1993, pp. 34-35
Risultati:
1-16
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