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Results: 51-75/113
Authors:
BELK JG
SUDIJONO JL
HOLMES DM
MCCONVILLE CF
JONES TS
JOYCE BA
Citation: Jg. Belk et al., SPATIAL-DISTRIBUTION OF IN DURING THE INITIAL-STAGES OF GROWTH OF INAS ON GAAS(001)-C(4X4), Surface science, 365(3), 1996, pp. 735-742
Authors:
MATSUMURA A
FERNANDEZ JM
THORNTON TJ
HOLMES SN
ZHANG J
JOYCE BA
Citation: A. Matsumura et al., MAGNETOTRANSPORT OF 2-DIMENSIONAL ELECTRON-GAS IN SI SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Solid-state electronics, 40(1-8), 1996, pp. 399-403
Authors:
SATO K
FAHY MR
ASHWIN MJ
JOYCE BA
Citation: K. Sato et al., SILICON INCORPORATION BEHAVIOR IN GAAS GROWN ON GAAS (111)A BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 165(4), 1996, pp. 345-350
Authors:
ZHANG J
LEES AK
TAYLOR AG
RAISBECK D
SHUKLA N
FERNANDEZ JM
JOYCE BA
PEMBLE ME
Citation: J. Zhang et al., IN-SITU MONITORING OF SI AND SIGE GROWTH ON SI(001) SURFACES DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY USING REFLECTANCE ANISOTROPY, Journal of crystal growth, 164(1-4), 1996, pp. 40-46
Authors:
NAJI O
ZHANG J
KANEKO T
JONES TS
NEAVE JH
JOYCE BA
Citation: O. Naji et al., A DETAILED TIME-OF-FLIGHT STUDY OF THE CRACKING PATTERN OF TRIMETHYLGALLIUM - IMPLICATIONS FOR MOMBE GROWTH, Journal of crystal growth, 164(1-4), 1996, pp. 58-65
Authors:
JOYCE BA
FERNANDEZ JM
XIE MH
MATSUMURA A
ZHANG J
TAYLOR AG
Citation: Ba. Joyce et al., GROWTH AND DOPING OF SI AND SIGE FILMS BY HYDRIDE GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 164(1-4), 1996, pp. 214-222
Authors:
FERNANDEZ JM
HART L
ZHANG XM
XIE MH
ZHANG J
JOYCE BA
Citation: Jm. Fernandez et al., SILICON SILICON-GERMANIUM MULTIPLE-QUANTUM WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY - HYDROGEN COVERAGE AND INTERFACIAL ABRUPTNESS/, Journal of crystal growth, 164(1-4), 1996, pp. 241-247
Authors:
YAMAGUCHI H
FAHY MR
JOYCE BA
Citation: H. Yamaguchi et al., INHIBITIONS OF 3-DIMENSIONAL ISLAND FORMATION IN INAS FILMS GROWN ON GAAS(111)A SURFACE BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(6), 1996, pp. 776-778
Authors:
EDIRISINGHE SP
STATONBEVAN A
FAWCETT PN
JOYCE BA
Citation: Sp. Edirisinghe et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF IN0.25GA0.75AS EPILAYERS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY - THE EFFECT OF EPILAYER THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 967-973
2-DIMENSIONAL ELECTRON GASES IN SIGE SI HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/
Authors:
FERNANDEZ JM
MATSUMURA A
ZHANG XM
XIE MH
HART L
ZHANG J
JOYCE BA
THORNTON TJ
Citation: Jm. Fernandez et al., 2-DIMENSIONAL ELECTRON GASES IN SIGE SI HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 330-335
Authors:
JOYCE BA
SHITARA T
FAHY MR
SATO K
NEAVE JH
FAWCETT PN
KAMIYA I
ZHANG XM
Citation: Ba. Joyce et al., MECHANISMS OF LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 30(2-3), 1995, pp. 87-97
Authors:
HU SJ
FAHY MR
SATO K
JOYCE BA
Citation: Sj. Hu et al., INCORPORATION OF SN ON GAAS (111)A SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 24(8), 1995, pp. 1003-1006
Authors:
MATSUMURA A
FERNANDEZ JM
THORNTON TJ
PRASAD RS
HOLMES SN
ZHANG XM
XIE MH
ZHANG J
JOYCE BA
Citation: A. Matsumura et al., CHARACTERIZATION OF N-CHANNEL SI SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Semiconductor science and technology, 10(9), 1995, pp. 1247-1252
Authors:
FERNANDEZ JM
XIE MH
MATSUMURA A
MOKLER SM
ZHANG J
JOYCE BA
Citation: Jm. Fernandez et al., ARSENIC INCORPORATION AND DOPING BEHAVIOR IN SILICON AND SIGE EPITAXIAL LAYERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Materials science and technology, 11(4), 1995, pp. 396-399
Authors:
HOLMES DM
BELK JG
SUDIJONO JL
NEAVE JH
JONES TS
JOYCE BA
Citation: Dm. Holmes et al., THE NATURE OF ISLAND FORMATION IN THE HOMOEPITAXIAL GROWTH OF GAAS(110), Surface science, 341(1-2), 1995, pp. 133-141
Authors:
AVERY AR
SUDIJONO JL
JONES TS
JOYCE BA
Citation: Ar. Avery et al., THE LOCATION OF SILICON ATOMS AND THE INITIAL-STAGES OF FORMATION OF THE SI GAAS(001) INTERFACE STUDIED BY STM/, Surface science, 340(1-2), 1995, pp. 57-70
Authors:
AVERY AR
HOLMES DM
SUDIJONO J
JONES TS
JOYCE BA
Citation: Ar. Avery et al., THE AS-TERMINATED RECONSTRUCTIONS FORMED BY GAAS(001) - A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE (2X4) AND C(4X4) SURFACES, Surface science, 323(1-2), 1995, pp. 91-101
Authors:
TURNER AR
PEMBLE ME
FERNANDEZ JM
JOYCE BA
ZHANG J
TAYLOR AG
Citation: Ar. Turner et al., REAL-TIME OBSERVATION OF REFLECTANCE ANISOTROPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GAS-SOURCE MOLECULAR-BEAM-EPITAXY GROWTH SI AND SIGE ON SI(001), Physical review letters, 74(16), 1995, pp. 3213-3216
Authors:
KANEKO T
SMILAUER P
JOYCE BA
Citation: T. Kaneko et al., REENTRANT LAYER-BY-LAYER ETCHING OF GAAS(001), Physical review letters, 74(16), 1995, pp. 3289-3292
Authors:
PEMBLE ME
SHUKLA N
TURNER AR
FERNANDEZ JM
JOYCE BA
ZHANG J
TAYLOR AG
BITZER T
FREDERICK BG
KITCHING KJ
RICHARDSON NV
Citation: Me. Pemble et al., REFLECTANCE ANISOTROPY FROM NON-III-V SYSTEMS - SI AND SIGE GROWTH ON(001)SI AND ADSORBATE-INDUCED RECONSTRUCTION OF CU(110), Physica status solidi. a, Applied research, 152(1), 1995, pp. 61-70
Authors:
MATSUMURA A
THORNTON TJ
FERNANDEZ JM
HOLMES SN
ZHANG J
JOYCE BA
Citation: A. Matsumura et al., ELECTRON HEATING EFFECT ON TRANSPORT-PROPERTIES IN SI SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 157(1-4), 1995, pp. 373-377
Authors:
ZHANG J
ZHANG XM
MATSUMURA A
MARINOPOULOU A
HARTUNG J
ANWAR N
PARRY G
XIE MH
MOKLER SM
FERNANDEZ JM
JOYCE BA
Citation: J. Zhang et al., GROWTH AND CHARACTERIZATION OF SI SIGE MICROSTRUCTURES ON PATTERNED SI SUBSTRATES USING GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 150(1-4), 1995, pp. 950-954
Authors:
ZHANG J
TAYLOR AG
FERNANDEZ JM
JOYCE BA
TURNER AR
PEMBLE ME
Citation: J. Zhang et al., REFLECTANCE ANISOTROPY AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SI AND SIGE ON SI(001), Journal of crystal growth, 150(1-4), 1995, pp. 1015-1019
Authors:
SATO K
FAHY MR
KAMIYA I
NEAVE JH
JOYCE BA
Citation: K. Sato et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY OSCILLATIONS DURING GROWTH OF (AL,CA)AS ON GAAS(111)A, Journal of crystal growth, 150(1-4), 1995, pp. 77-80
Authors:
AVERY AR
HOLMES DM
SUDIJONO JL
JONES TS
FAHY MR
JOYCE BA
Citation: Ar. Avery et al., A SCANNING-TUNNELING-MICROSCOPY STUDY OF THE DEPOSITION OF SI ON GAAS(001) IMPLICATIONS FOR SI DELTA-DOPING, Journal of crystal growth, 150(1-4), 1995, pp. 202-208