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Results: 1-25 | 26-48
Results: 1-25/48
HOLE TRANSPORT INVESTIGATION IN UNSTRAINED AND STRAINED SIGE (VOL 16,PG 1667, 1998)
Authors: BUFLER FM GRAF P MEINERZHAGEN B FISCHER G KIBBEL H
Citation: Fm. Bufler et al., HOLE TRANSPORT INVESTIGATION IN UNSTRAINED AND STRAINED SIGE (VOL 16,PG 1667, 1998), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2906-2906
MIDINFRARED SILICON GERMANIUM BASED PHOTODETECTION/
Authors: PRESTING H HEPP M KIBBEL H THONKE K SAUER R MAHLEIN M CABANSKI W JAROS M
Citation: H. Presting et al., MIDINFRARED SILICON GERMANIUM BASED PHOTODETECTION/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1520-1524
HOLE TRANSPORT INVESTIGATION IN UNSTRAINED AND STRAINED SIGE
Authors: BUFLER FM GRAF P MEINERZHAGEN B FISCHER G KIBBEL H
Citation: Fm. Bufler et al., HOLE TRANSPORT INVESTIGATION IN UNSTRAINED AND STRAINED SIGE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1667-1669
EFFICIENT TRANSIENT COMPRESSION USING AN ALL-SILICON NONLINEAR TRANSMISSION-LINE
Authors: BIRK M KIBBEL H WARNS C TRASSER A SCHUMACHER H
Citation: M. Birk et al., EFFICIENT TRANSIENT COMPRESSION USING AN ALL-SILICON NONLINEAR TRANSMISSION-LINE, IEEE microwave and guided wave letters, 8(5), 1998, pp. 196-198
ARTIFICIAL SUBSTRATES FOR N-TYPE AND P-TYPE SIGE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
Authors: HACKBARTH T KIBBEL H GLUECK M HOECK G HERZOG HJ
Citation: T. Hackbarth et al., ARTIFICIAL SUBSTRATES FOR N-TYPE AND P-TYPE SIGE HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS, Thin solid films, 321, 1998, pp. 136-140
DOPANTS EFFECTS ON THE INTERFACIAL REACTION BETWEEN CO AND STRAINED SI0.8GE0.2 LAYERS
Authors: CYTERMANN C HOLZMAN E BRENER R FASTOW M EIZENBERG M GLUCK M KIBBEL H KONIG U
Citation: C. Cytermann et al., DOPANTS EFFECTS ON THE INTERFACIAL REACTION BETWEEN CO AND STRAINED SI0.8GE0.2 LAYERS, Journal of applied physics, 83(4), 1998, pp. 2019-2024
LOW-FIELD AND HIGH-FIELD ELECTRON-TRANSPORT PARAMETERS FOR UNSTRAINEDAND STRAINED SI1-XGEX
Authors: BUFLER FM GRAF P MEINERZHAGEN B ADELINE B RIEGER MM KIBBEL H FISCHER G
Citation: Fm. Bufler et al., LOW-FIELD AND HIGH-FIELD ELECTRON-TRANSPORT PARAMETERS FOR UNSTRAINEDAND STRAINED SI1-XGEX, IEEE electron device letters, 18(6), 1997, pp. 264-266
IR ABSORPTION AND QUANTUM EFFICIENCY OF HIGHLY P-DOPED SIGE LAYERS
Authors: USCHMANN J PRESTING H KIBBEL H THONKE K SAUER R CABANSKI W JAROS M
Citation: J. Uschmann et al., IR ABSORPTION AND QUANTUM EFFICIENCY OF HIGHLY P-DOPED SIGE LAYERS, Thin solid films, 294(1-2), 1997, pp. 340-342
ELASTIC STRAIN AND ENHANCED LIGHT-EMISSION IN DRY-ETCHED SI SI1-XGEX QUANTUM DOTS/
Authors: TANG YS TORRES CMS NILSSON S DIETRICH B KISSINGER W WHALL TE PARKER EHC NI WX HANSSON GV PRESTING H KIBBEL H
Citation: Ys. Tang et al., ELASTIC STRAIN AND ENHANCED LIGHT-EMISSION IN DRY-ETCHED SI SI1-XGEX QUANTUM DOTS/, Journal of electronic materials, 25(2), 1996, pp. 287-291
OPTICAL ANISOTROPIES IN STRAINED SI SIGE SYSTEMS/
Authors: OLAJOS J ENGVALL J GRIMMEISS HG KIBBEL H PRESTING H
Citation: J. Olajos et al., OPTICAL ANISOTROPIES IN STRAINED SI SIGE SYSTEMS/, Applied surface science, 102, 1996, pp. 283-287
CONFINEMENT EFFECTS AND POLARIZATION DEPENDENCE OF LUMINESCENCE FROM MONOLAYER-THICK GE QUANTUM-WELLS
Authors: OLAJOS J ENGVALL J GRIMMEISS HG GAIL M ABSTREITER G PRESTING H KIBBEL H
Citation: J. Olajos et al., CONFINEMENT EFFECTS AND POLARIZATION DEPENDENCE OF LUMINESCENCE FROM MONOLAYER-THICK GE QUANTUM-WELLS, Physical review. B, Condensed matter, 54(3), 1996, pp. 1922-1927
RESIDUAL STRAIN IN SI-SI1-XGEX QUANTUM DOTS
Authors: TANG YS TORRES CMS NILSSON S DIETRICH B KISSINGER W WHALL TE PARKER EHC PRESTING H KIBBEL H
Citation: Ys. Tang et al., RESIDUAL STRAIN IN SI-SI1-XGEX QUANTUM DOTS, Solid-state electronics, 40(1-8), 1996, pp. 383-386
OPTICAL ANISOTROPY OF SIGE SUPERLATTICES
Authors: ENGVALL J OLAJOS J GRIMMEISS HG PRESTING H KIBBEL H
Citation: J. Engvall et al., OPTICAL ANISOTROPY OF SIGE SUPERLATTICES, Journal of applied physics, 80(7), 1996, pp. 4012-4018
ELECTROLUMINESCENCE, PHOTOLUMINESCENCE, AND PHOTOCURRENT STUDIES OF SI SIGE P-I-N HETEROSTRUCTURES/
Authors: FORSTER M MANTZ U RAMMINGER S THONKE K SAUER R KIBBEL H SCHAFFLER F HERZOG HJ
Citation: M. Forster et al., ELECTROLUMINESCENCE, PHOTOLUMINESCENCE, AND PHOTOCURRENT STUDIES OF SI SIGE P-I-N HETEROSTRUCTURES/, Journal of applied physics, 80(5), 1996, pp. 3017-3023
FULLY SELF-ALIGNED DOUBLE MESA SIGE-HBT WITH EXTERNAL TRANSISTOR OPTIMIZATION
Authors: BEHAMMER D ALBERS JN GEPPERT W BOSCH BG SCHUPPEN A KIBBEL H
Citation: D. Behammer et al., FULLY SELF-ALIGNED DOUBLE MESA SIGE-HBT WITH EXTERNAL TRANSISTOR OPTIMIZATION, Electronics Letters, 32(19), 1996, pp. 1830-1832
ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM SI GE/SI1-XGEX QUANTUM-WELLDIODES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: PRESTING H ZINKE T SPLETT A KIBBEL H JAROS M
Citation: H. Presting et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE FROM SI GE/SI1-XGEX QUANTUM-WELLDIODES GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 69(16), 1996, pp. 2376-2378
MESA AND PLANAR SIGE-HBTS ON MBE-WAFERS
Authors: SCHUPPEN A GRUHLE A KIBBEL H KONIG U
Citation: A. Schuppen et al., MESA AND PLANAR SIGE-HBTS ON MBE-WAFERS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 298-305
OPTICAL-PROPERTIES OF SI-SI1-XGEX AND SI-GE NANOSTRUCTURES
Authors: TANG YS TORRES CMS WHALL TE PARKER EHC PRESTING H KIBBEL H
Citation: Ys. Tang et al., OPTICAL-PROPERTIES OF SI-SI1-XGEX AND SI-GE NANOSTRUCTURES, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 356-362
1 F NOISE IN SELF-ALIGNED SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR/
Authors: PLANA R ESCOTTE L ROUX JP GRAFFEUIL J GRUHLE A KIBBEL H
Citation: R. Plana et al., 1 F NOISE IN SELF-ALIGNED SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTOR/, IEEE electron device letters, 16(2), 1995, pp. 58-60
PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDY OF SI SI0.91GE0.09 AND SI-9/GE-6 QUANTUM DOTS/
Authors: TANG YS TORRES CMS KUBIAK RA WHALL TE PARKER EHC PRESTING H KIBBEL H
Citation: Ys. Tang et al., PHOTOLUMINESCENCE AND PHOTOREFLECTANCE STUDY OF SI SI0.91GE0.09 AND SI-9/GE-6 QUANTUM DOTS/, Journal of electronic materials, 24(2), 1995, pp. 99-106
AN INVESTIGATION OF X-RAY REFLECTIVITY AND DIFFRACTION FROM ELECTROLUMINESCENT SHORT-PERIOD SI-GE SUPERLATTICE STRUCTURES
Authors: PLOTZ WM KOPPENSTEINER E KIBBEL H PRESTING H BAUER G LISCHKA K
Citation: Wm. Plotz et al., AN INVESTIGATION OF X-RAY REFLECTIVITY AND DIFFRACTION FROM ELECTROLUMINESCENT SHORT-PERIOD SI-GE SUPERLATTICE STRUCTURES, Semiconductor science and technology, 10(12), 1995, pp. 1614-1620
LUMINESCENCE FROM MONOLAYER-THICK GE QUANTUM-WELLS EMBEDDED IN SI
Authors: ENGVALL J OLAJOS J GRIMMEISS HG KIBBEL H PRESTING H
Citation: J. Engvall et al., LUMINESCENCE FROM MONOLAYER-THICK GE QUANTUM-WELLS EMBEDDED IN SI, Physical review. B, Condensed matter, 51(3), 1995, pp. 2001-2004
OPTICAL ANISOTROPY OF SI GE SUPERLATTICES - RESONANT RAMAN-SCATTERINGIN INPLANE GEOMETRY/
Authors: SCHORER R ABSTREITER G KIBBEL H PRESTING H TSERBAK C THEODOROU G
Citation: R. Schorer et al., OPTICAL ANISOTROPY OF SI GE SUPERLATTICES - RESONANT RAMAN-SCATTERINGIN INPLANE GEOMETRY/, Solid state communications, 93(12), 1995, pp. 1025-1029
ROOM-TEMPERATURE LUMINESCENCE FROM SI GE SINGLE-QUANTUM-WELL DIODES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: PRESTING H ZINKE T BRUX O GAIL M ABSTREITER G KIBBEL H JAROS M
Citation: H. Presting et al., ROOM-TEMPERATURE LUMINESCENCE FROM SI GE SINGLE-QUANTUM-WELL DIODES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 157(1-4), 1995, pp. 15-20
TEST OF VEGARDS LAW IN THIN EPITAXIAL SIGE LAYERS
Authors: KASPER E SCHUH A BAUER G HOLLANDER B KIBBEL H
Citation: E. Kasper et al., TEST OF VEGARDS LAW IN THIN EPITAXIAL SIGE LAYERS, Journal of crystal growth, 157(1-4), 1995, pp. 68-72
Risultati: 1-25 | 26-48