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Results: 26-43/43
Authors:
VESCAN A
GLUCHE P
EBERT W
KOHN E
Citation: A. Vescan et al., SELECTIVELY GROWN OHMIC CONTACTS TO DELTA-DOPED DIAMOND FILMS, Electronics Letters, 32(15), 1996, pp. 1419-1421
Authors:
WOLTER SD
BORST TH
VESCAN A
KOHN E
Citation: Sd. Wolter et al., THE NUCLEATION OF HIGHLY ORIENTED DIAMOND ON SILICON VIA AN ALTERNATING-CURRENT SUBSTRATE BIAS, Applied physics letters, 68(25), 1996, pp. 3558-3560
Authors:
SANDOR V
HASSAN R
KOHN E
Citation: V. Sandor et al., EXACERBATION OF PSEUDOGOUT BY GRANULOCYTE-COLONY-STIMULATING FACTOR, Annals of internal medicine, 125(9), 1996, pp. 781-781
Authors:
VESCAN A
EBERT W
BORST T
KOHN E
Citation: A. Vescan et al., I V CHARACTERISTICS OF EPITAXIAL SCHOTTKY AU BARRIER DIODE ON P(+) DIAMOND SUBSTRATE/, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 661-665
Authors:
GEIGER D
MITTERMEIER E
DICKMANN J
GENG C
WINTERHOF R
SCHOLZ F
KOHN E
Citation: D. Geiger et al., INGAP INGAAS HFET WITH HIGH-CURRENT DENSITY AND HIGH CUTOFF FREQUENCIES/, IEEE electron device letters, 16(6), 1995, pp. 259-261
Authors:
GEIGER D
DICKMANN J
WOLK C
KOHN E
Citation: D. Geiger et al., RECESS DEPENDENT BREAKDOWN BEHAVIOR OF GAAS-HFETS, IEEE electron device letters, 16(1), 1995, pp. 30-32
Authors:
LIPKA KM
SPLINGART B
THERON D
LUO JK
SALMER G
THOMAS H
MORGAN DV
KOHN E
Citation: Km. Lipka et al., LT-GAAS WITH HIGH BREAKDOWN STRENGTH AT LOW-TEMPERATURE FOR POWER MISFET APPLICATIONS, Journal of electronic materials, 24(7), 1995, pp. 913-916
Authors:
MITTERMEIER E
GEIGER D
STRAHLE S
KOHN E
Citation: E. Mittermeier et al., FABRICATION OF DUAL-GATE FET STRUCTURES WITH SHORT GATE LENGTH AND NMSPACING, Microelectronic engineering, 27(1-4), 1995, pp. 75-78
Authors:
KUNZEL H
BOTTCHER J
HASE A
STRAHLE S
KOHN E
Citation: H. Kunzel et al., OPTIMIZED MOLECULAR-BEAM EPITAXIAL-GROWTH TEMPERATURE PROFILE FOR HIGH-PERFORMANCE ALINAS GAINAS SINGLE-QUANTUM-WELL HIGH-ELECTRON-MOBILITYTRANSISTOR STRUCTURES/, Journal of crystal growth, 150(1-4), 1995, pp. 1241-1245
Authors:
GEIGER D
MITTERMEIER E
DICKMANN J
GENG C
SCHOLZ F
KOHN E
Citation: D. Geiger et al., NOISE IN CHANNEL DOPED GAINP INGAAS HFET DEVICES/, Electronics Letters, 31(15), 1995, pp. 1295-1297
Authors:
EBERT W
VESCAN A
KOHN E
Citation: W. Ebert et al., GENERAL DIAMOND SCHOTTKY-BARRIER DIODE MODEL FROM LOCUS DIAGRAM ANALYSIS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 887-890
Authors:
EBERT W
VESCAN A
BORST TH
KOHN E
Citation: W. Ebert et al., HIGH-CURRENT P P+-DIAMOND SCHOTTKY DIODE, IEEE electron device letters, 15(8), 1994, pp. 289-291
Authors:
COLE K
KOHN E
Citation: K. Cole et E. Kohn, CALCIUM-MEDIATED SIGNAL-TRANSDUCTION - BIOLOGY, BIOCHEMISTRY, AND THERAPY, Cancer metastasis reviews, 13(1), 1994, pp. 31-44
Authors:
HOLLINGSWORTH HC
STEINBERG SM
KOHN E
BRYANT B
MERINO MJ
Citation: Hc. Hollingsworth et al., TUMOR ANGIOGENESIS IN ADVANCED-STAGE OVARIAN-CANCER, Laboratory investigation, 70(1), 1994, pp. 10000089-10000089
Authors:
BICHER A
KOHN E
SAROSY G
DAVIS P
ADAMO DO
JACOB J
CHRISTIAN M
REED E
Citation: A. Bicher et al., THE ABSENCE OF CUMULATIVE BONE-MARROW TOXICITY IN PATIENTS WITH RECURRENT ADENOCARCINOMA OF THE OVARY RECEIVING DOSE-INTENSE TAXOL AND GRANULOCYTE-COLONY STIMULATING FACTOR, Anti-cancer drugs, 4(2), 1993, pp. 141-148
Authors:
LIPKA KM
SPLINGART B
ZHANG X
POESE M
PANZLAFF K
KOHN E
Citation: Km. Lipka et al., INTERFACIAL BARRIER CHARACTERISTICS OF LT-GAAS ON LOW DOPED GAAS-LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 55-60
Authors:
REED E
JANIK J
BOOKMAN MA
ROTHENBERG M
SMITH J
YOUNG RC
OZOLS RF
VANDERMOLEN L
KOHN E
JACOB JL
CORNELISON TL
Citation: E. Reed et al., HIGH-DOSE CARBOPLATIN AND RECOMBINANT GRANULOCYTE-MACROPHAGE COLONY-STIMULATING FACTOR IN ADVANCED-STAGE RECURRENT OVARIAN-CANCER, Journal of clinical oncology, 11(11), 1993, pp. 2118-2126
Authors:
LIPKA K
SPLINGART B
KOHN E
Citation: K. Lipka et al., HIGH IV PRODUCT LT-GAAS MISFET STRUCTURE, Electronics Letters, 29(13), 1993, pp. 1170-1172