AAAAAA
Results:
1-18
|
Results: 18
Authors:
Yassievich, IN
Kagan, MS
Chao, KA
Citation: In. Yassievich et al., Resonant states and terahertz emission, IAN FIZ, 65(2), 2001, pp. 240-242
Authors:
Altukhov, IV
Chirkova, EG
Sinis, VP
Kagan, MS
Gousev, YP
Thomas, SG
Wang, KL
Odnoblyudov, MA
Yassievich, IN
Citation: Iv. Altukhov et al., Towards Si1-xGex quantum-well resonant-state terahertz laser, APPL PHYS L, 79(24), 2001, pp. 3909-3911
Authors:
Zhdanova, NG
Kagan, MS
Landsberg, EG
Citation: Ng. Zhdanova et al., Electron localization in a nondegenerate semiconductor with a random potential due to charged impurities, J EXP TH PH, 90(4), 2000, pp. 662-670
Authors:
Altukhov, IV
Kagan, MS
Korolev, KA
Sinis, VP
Tomas, SG
Wang, KL
Citation: Iv. Altukhov et al., Far IR radiation of GeSi/Si quantum wells, IAN FIZ, 64(2), 2000, pp. 242-244
Authors:
Odnoblyudov, MA
Yassievich, IN
Kagan, MS
Chao, KA
Citation: Ma. Odnoblyudov et al., Mechanism of population inversion in uniaxially strained p-Ge continuous-wave lasers, PHYS REV B, 62(23), 2000, pp. 15291-15294
Authors:
Altukhov, IV
Kagan, MS
Sinis, VP
Thomas, SG
Wang, KL
Blom, A
Odnoblyudov, MO
Citation: Iv. Altukhov et al., Hole transport due to shallow acceptors along boron doped SiGe quantum wells, THIN SOL FI, 380(1-2), 2000, pp. 218-220
Authors:
Kagan, MS
Altukhov, IV
Sinis, VP
Thomas, SG
Wang, KL
Chao, KA
Yassievich, IN
Citation: Ms. Kagan et al., Terahertz emission of SiGe/Si quantum wells, THIN SOL FI, 380(1-2), 2000, pp. 237-239
Authors:
Altukhov, IV
Kagan, MS
Korolev, KA
Sinis, VP
Chirkova, EG
Odnoblyudov, MA
Yassievich, IN
Citation: Iv. Altukhov et al., Resonant acceptor states and terahertz stimulated emission of uniaxially strained germanium, J EXP TH PH, 88(1), 1999, pp. 51-57
Authors:
Altukhov, IV
Kagan, MS
Gousev, YP
Sinis, VP
Korolev, KA
Olsson, HK
Galperin, YM
Odnoblyudov, MA
Yassievich, IN
Chao, KA
Citation: Iv. Altukhov et al., Continuous stimulated terahertz emission due to intra-center population inversion in uniaxially strained germanium, PHYSICA B, 272(1-4), 1999, pp. 458-460
Authors:
Kagan, MS
Altukhov, IV
Korolev, KA
Orlov, DV
Sinis, VP
Thomas, SG
Wang, KL
Citation: Ms. Kagan et al., Lateral transport in boron doped SiGe quantum wells, SUPERLATT M, 25(1-2), 1999, pp. 203-206
Authors:
Kagan, MS
Altukhov, IV
Korolev, KA
Orlov, DV
Sinis, VP
Thomas, SG
Wang, KL
Yassievich, IN
Citation: Ms. Kagan et al., Lateral transport in strained SiGe quantum wells doped with boron, PHYS ST S-B, 211(1), 1999, pp. 495-499
Authors:
Kagan, MS
Altukhov, IV
Korolev, KA
Orlov, DV
Sinis, VP
Thomas, SG
Wang, KL
Schmaltz, K
Yassievich, IN
Citation: Ms. Kagan et al., Acceptor states in boron doped SiGe quantum wells, IAN FIZ, 63(2), 1999, pp. 359-363
Authors:
Kagan, MS
Landsberg, EG
Zhdanova, NG
Citation: Ms. Kagan et al., Mobility edge in a nondegenerate semiconductor with charged impurities, PHYS REV B, 60(23), 1999, pp. 15531-15533
Authors:
Odnoblyudov, MA
Yassievich, IN
Kagan, MS
Galperin, YM
Chao, KA
Citation: Ma. Odnoblyudov et al., Population inversion induced by resonant states in semiconductors, PHYS REV L, 83(3), 1999, pp. 644-647
Authors:
Gousev, YP
Altukhov, IV
Korolev, KA
Sinis, VP
Kagan, MS
Haller, EE
Odnoblyudov, MA
Yassievich, IN
Chao, KA
Citation: Yp. Gousev et al., Widely tunable continuous-wave THz laser, APPL PHYS L, 75(6), 1999, pp. 757-759
Authors:
Kagan, MS
Altukhov, IV
Korolev, KA
Orlov, DV
Sinis, VP
Schmalz, K
Thomas, SG
Wang, KL
Yassievich, IN
Citation: Ms. Kagan et al., Shallow acceptor states in SiGe quantum wells, PHYS ST S-B, 210(2), 1998, pp. 667-670
Authors:
Odnoblyudov, MA
Chistyakov, VM
Yassievich, IN
Kagan, MS
Citation: Ma. Odnoblyudov et al., Resonant states in strained semiconductors, PHYS ST S-B, 210(2), 1998, pp. 873-877
Authors:
Kagan, MS
Landsberg, EG
Zhdanova, NG
Altukhov, IV
Citation: Ms. Kagan et al., Mobility edge in nondegenerate semiconductor with random potential of charged impurities, PHYS ST S-B, 210(2), 1998, pp. 891-895
Risultati:
1-18
|