Authors:
Ji, ZG
Wong, KW
Wang, M
Tse, KPK
Kwok, RWM
Lau, WM
Citation: Zg. Ji et al., X-ray photoemission study of low-energy ion beam induced changes on copperphthalocyanine film, NUCL INST B, 174(3), 2001, pp. 311-316
Authors:
Deng, JX
Wang, B
Tan, LW
Cui, BT
Yan, H
Chen, GH
Wong, SP
Kwok, RWM
Lau, LWM
Citation: Jx. Deng et al., Influence of d.c. substrate bias voltage on growth of cubic boron nitride films by radio frequency sputter, DIAM RELAT, 9(9-10), 2000, pp. 1779-1781
Citation: Zw. Deng et al., Time-resolved measurement of surface band bending of cleaved GaAs(110) andInP(110) by high resolution XPS, APPL SURF S, 158(1-2), 2000, pp. 58-63
Citation: Hy. Wong et al., Effects of ion beam bombardment on electrochromic tungsten oxide films studied by X-ray photoelectron spectroscopy and Rutherford back-scattering, THIN SOL FI, 376(1-2), 2000, pp. 131-139
Authors:
Wang, H
Wong, SP
Cheung, WY
Ke, N
Wen, GH
Zhang, XX
Kwok, RWM
Citation: H. Wang et al., Magnetic properties and structure evolution of amorphous Co-C nanocomposite films prepared by pulsed filtered vacuum arc deposition, J APPL PHYS, 88(8), 2000, pp. 4919-4921
Citation: Kw. Wong et al., Negative electron affinity on polycrystalline diamond surface induced by lithium fluoride deposition, DIAM RELAT, 8(10), 1999, pp. 1885-1890
Citation: Kf. Chan et al., Mechanical, tribological, and stress analyses of ion-beam-deposited boron-rich boron nitride films with increasing N content, J MATER RES, 14(10), 1999, pp. 3962-3972
Citation: Wh. Choy et al., Surface roughness and oxide contents of gas-phase and solution-phase polysulfide passivation of III-V surfaces, J VAC SCI A, 17(1), 1999, pp. 93-96
Citation: Kw. Wong et al., Lowering of work function induced by deposition of ultra-thin rubidium fluoride layer on polycrystalline diamond surface, APPL SURF S, 140(1-2), 1999, pp. 144-149
Authors:
Gritsenko, VA
Zhuravlev, KS
Milov, AD
Wong, H
Kwok, RWM
Xu, JB
Citation: Va. Gritsenko et al., Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance, THIN SOL FI, 353(1-2), 1999, pp. 20-24
Citation: Zw. Deng et al., Band gap state formation in InP (110) induced by 10 and 100 eV argon ion bombardment, J APPL PHYS, 86(7), 1999, pp. 3676-3681