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Authors: MARCINKEVICIUS S FROJDH K HILLMER H LOSCH R OLIN U
Citation: S. Marcinkevicius et al., VERTICAL CARRIER TRANSPORT IN INP-BASED QUANTUM-WELL LASER STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 30-33

Authors: MARCINKEVICIUS S HILLMER H LOSCH R FROJDH K OLIN U
Citation: S. Marcinkevicius et al., INTERWELL CARRIER DISTRIBUTION IN INALGAAS QUANTUM-WELL LASER STRUCTURES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 577-580

Authors: SCHREINER M PASCHER H DENNINGER G STUDENIKIN SA WEIMANN G LOSCH R
Citation: M. Schreiner et al., NUCLEAR-SPIN RELAXATION IN ALGAAS GAAS HETEROSTRUCTURES OBSERVED VIA OPTICALLY DETECTED MAGNETIC-RESONANCE (ODMR) EXPERIMENTS/, Solid state communications, 102(10), 1997, pp. 715-720

Authors: HILLMER H LOSCH R SCHLAPP W
Citation: H. Hillmer et al., STRAIN-BALANCED ALGAINAS INP HETEROSTRUCTURES WITH UP TO 50 QWS BY MBE/, Journal of crystal growth, 175, 1997, pp. 1120-1125

Authors: KOHL K LOSCH R GONZALEZRODRIGUEZ AM JIMENEZ MS MORALES D
Citation: K. Kohl et al., FOLIAR CATION CONTENTS OF LAUREL FOREST TREES ON THE CANARY-ISLANDS, Flora, 191(3), 1996, pp. 303-311

Authors: NACHTWEI G BREITLOW C BARTHOLOMAUS L BLOCKER M LINKE A BLIEK L AHLERS FJ SVOBODA P CUKR M WEIMANN T NICKEL H LOSCH H LOSCH R SCHLAPP W
Citation: G. Nachtwei et al., GATE-CONTROLLED CURRENT DISTRIBUTION ON DOUBLE-BRIDGE QUANTUM HALL CONDUCTORS, Semiconductor science and technology, 11(1), 1996, pp. 89-95

Authors: MARCINKEVICIUS S HILLMER H LOSCH R OLIN U
Citation: S. Marcinkevicius et al., PHOTOEXCITED CARRIER DYNAMICS IN INALGAAS INP QUANTUM-WELL LASER STRUCTURES/, Applied physics letters, 69(8), 1996, pp. 1101-1103

Authors: MOHRDIEK S BURKHARD H STEINHAGEN F HILLMER H LOSCH R SCHLAPP W GOBEL R
Citation: S. Mohrdiek et al., 10-GB S STANDARD FIBER TRANSMISSION USING DIRECTLY MODULATED 1.55-MU-M QUANTUM-WELL DFB LASERS/, IEEE photonics technology letters, 7(11), 1995, pp. 1357-1359

Authors: ALBRECHT TF SANDMANN JHH FELDMANN J STOLZ W GOBEL EO HILLMER H LOSCH R SCHLAPP W
Citation: Tf. Albrecht et al., DESIGN AND APPLICATION OF A FEMTOSECOND OPTICAL PARAMETRIC OSCILLATORFOR TIME-RESOLVED SPECTROSCOPY OF SEMICONDUCTOR HETEROSTRUCTURES, Applied physics. B, Lasers and optics, 60(5), 1995, pp. 459-467

Authors: PROHASKA T FRIEDBACHER G GRASSERBAUER M NICKEL H LOSCH R SCHLAPP W
Citation: T. Prohaska et al., IN-SITU INVESTIGATION OF SURFACE PROCESSES ON ALGAAS GAAS CLEAVAGE EDGES AS STUDIED BY ATOMIC-FORCE MICROSCOPY/, Fresenius' journal of analytical chemistry, 353(5-8), 1995, pp. 670-674

Authors: SCHERER H SCHWEITZER L AHLERS FJ BLIEK L LOSCH R SCHLAPP W
Citation: H. Scherer et al., CURRENT SCALING AND ELECTRON HEATING BETWEEN INTEGER QUANTUM HALL PLATEAUS IN GAAS ALXGA1-XAS HETEROSTRUCTURES/, Semiconductor science and technology, 10(7), 1995, pp. 959-964

Authors: BREITLOW C NACHTWEI G BLIEK L AHLERS FJ WEIMANN T NICKEL H LOSCH R SCHLAPP W
Citation: C. Breitlow et al., POTENTIAL DISTRIBUTION ON MULTIPLE BRIDGE DEVICES IN QUANTIZING MAGNETIC-FIELDS, Semiconductor science and technology, 10(4), 1995, pp. 529-535

Authors: HOFSASS V KUHN J KADEN C HARLE V BOLAY H SCHOLZ F SCHWEIZER H HILLMER H LOSCH R SCHLAPP W
Citation: V. Hofsass et al., OPTICAL INTEGRATION OF LATERALLY MODIFIED MULTIPLE-QUANTUM-WELL STRUCTURES BY IMPLANTATION ENHANCED INTERMIXING TO REALIZE GAIN-COUPLED DFBLASERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 471-476

Authors: HILLMER H LOSCH R SCHLAPP W BURKHARD H
Citation: H. Hillmer et al., MBE GROWTH AND STUDY OF STRAIN-COMPENSATED ALZGA1-Z-XINXAS ALUGA1-U-VINVAS/INP QUANTUM-WELLS/, Physical review. B, Condensed matter, 52(24), 1995, pp. 17025-17027

Authors: HILLMER H LOSCH R SCHLAPP W POCKER A
Citation: H. Hillmer et al., CHARACTERIZATION OF HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL GROWN INXALZGA1-X-ZAS INYALUGA1-U-YAS/INP HETEROSTRUCTURES/, Journal of crystal growth, 146(1-4), 1995, pp. 159-163

Authors: HOFSASS V KUHN J SCHWEIZER H HILLMER H LOSCH R SCHLAPP W
Citation: V. Hofsass et al., INTERDIFFUSION BEHAVIOR IN N-DOPED AND UNDOPED GAINAS ALGAINAS MULTIPLE-QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 78(5), 1995, pp. 3534-3536

Authors: HILLMER H LOSCH R SCHLAPP W
Citation: H. Hillmer et al., COMPOSITIONAL INFLUENCE ON PHOTOLUMINESCENCE LINEWIDTH AND STOKES SHIFT IN INXALZGA1-X-ZAS INYALUGA1-U-YAS/INP HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 77(10), 1995, pp. 5440-5442

Authors: STEINHAGEN F HILLMER H LOSCH R SCHLAPP W WALTER H GOBEL R KUPHAL E HARTNAGEL HL BURKHARD H
Citation: F. Steinhagen et al., ALGAINAS INP 1.5 MU-M MQW DFB LASER-DIODES EXCEEDING 20 GHZ BANDWIDTH/, Electronics Letters, 31(4), 1995, pp. 274-275

Authors: HILLMER H LOSCH R STEINHAGEN F SCHLAPP W POCKER A BURKHARD H
Citation: H. Hillmer et al., MBE GROWN STRAIN-COMPENSATED ALGAINAS ALGAINAS/INP MQW LASER STRUCTURES/, Electronics Letters, 31(16), 1995, pp. 1346-1348

Authors: PROHASKA T FRIEDBACHER G GRASSERBAUER M NICKEL H LOSCH R SCHLAPP W
Citation: T. Prohaska et al., IN-SITU INVESTIGATION OF ALUMINUM GALLIUM ARSENIDE GALLIUM ARSENIDE MULTILAYER STRUCTURES UNDER INERT AND REACTIVE MEDIA BY ATOMIC-FORCE MICROSCOPY/, Analytical chemistry, 67(9), 1995, pp. 1530-1535

Authors: ASCHAN G LOSCH R
Citation: G. Aschan et R. Losch, WATER RELATIONS OF WALL-FISSURE PLANTS, Acta oecologica, 15(2), 1994, pp. 151-164

Authors: DINGES HW HILLMER H BURKHARD H LOSCH R NICKEL H SCHLAPP W
Citation: Hw. Dinges et al., STUDY OF IN0.53GA0.47AS IN0.52AL0.48AS QUANTUM-WELLS ON INP BY SPECTROSCOPIC ELLIPSOMETRY AND PHOTOLUMINESCENCE/, Surface science, 309, 1994, pp. 1057-1060

Authors: ESSLINGER A WINKLER RW ROCKE C WIXFORTH A KOTTHAUS JP NICKEL H SCHLAPP W LOSCH R
Citation: A. Esslinger et al., ULTRASONIC APPROACH TO THE INTEGER AND FRACTIONAL QUANTUM HALL-EFFECT, Surface science, 305(1-3), 1994, pp. 83-86

Authors: HEEDT C BUCHALI F PROST W BROCKERHOFF W FRITZSCHE D NICKEL H LOSCH R SCHLAPP W TEGUDE FJ
Citation: C. Heedt et al., DRASTIC REDUCTION OF GATE LEAKAGE IN INALAS INGAAS HEMTS USING A PSEUDOMORPHIC INALAS HOLE BARRIER LAYER/, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1685-1690

Authors: LOSCH R STRATMANN M VIEFHAUS H
Citation: R. Losch et al., STRUCTURE AND PROPERTIES OF MERCAPTAN-LB FILMS PREPARED UNDER ELECTROCHEMICAL POTENTIAL CONTROL, Electrochimica acta, 39(8-9), 1994, pp. 1215-1221
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