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Results:
1-25
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Results: 25
Authors:
Sciacca, E
Lombardo, S
Patti, D
Ghioni, M
Zappa, F
Rimini, E
Cova, S
Citation: E. Sciacca et al., Silicon p-n junctions biased above breakdown used as monitors of carrier lifetime, MAT SC S PR, 4(1-3), 2001, pp. 159-161
Authors:
Crupi, I
Lombardo, S
Spinella, C
Gerardi, C
Fazio, B
Vulpio, M
Melanotte, M
Liao, YG
Bongiorno, C
Citation: I. Crupi et al., Memory effects in MOS capacitors with silicon quantum dots, MAT SCI E C, 15(1-2), 2001, pp. 283-285
Authors:
Carossa, S
Lombardo, S
Pera, P
Corsalini, M
Rastello, ML
Preti, G
Citation: S. Carossa et al., Influence of posts and cores on light transmission through different all-ceramic crowns: Spectrophotometric and clinical evaluation, INT J PROST, 14(1), 2001, pp. 9-14
Authors:
Lombardo, S
Mulone, G
Straughan, B
Citation: S. Lombardo et al., Non-linear stability in the Benard problem for a double-diffusive mixture in a porous medium, MATH METH A, 24(16), 2001, pp. 1229-1246
Authors:
Lombardo, S
Citation: S. Lombardo, Intrinsic dielectric breakdown of ultra-thin gate oxides, MICROEL ENG, 59(1-4), 2001, pp. 33-42
Authors:
Crupi, F
Ciofi, C
Iannaccone, G
Neri, B
Lombardo, S
Citation: F. Crupi et al., Current noise at the oxide hard-breakdown, MICROEL ENG, 59(1-4), 2001, pp. 43-47
Authors:
Lombardo, S
Mulone, G
Rionero, S
Citation: S. Lombardo et al., Global nonlinear exponential stability of the conduction-diffusion solution for Schmidt numbers greater than Prandtl numbers, J MATH ANAL, 262(1), 2001, pp. 191-207
Authors:
Crupi, I
Lombardo, S
Spinella, C
Bongiorno, C
Liao, Y
Gerardi, C
Fazio, B
Vulpio, M
Privitera, S
Citation: I. Crupi et al., Electrical and structural characterization of metal-oxide-semiconductor capacitors with silicon rich oxide, J APPL PHYS, 89(10), 2001, pp. 5552-5558
Authors:
Carossa, S
Pera, P
Doglio, P
Lombardo, S
Colagrande, P
Brussino, L
Rolla, G
Bucca, C
Citation: S. Carossa et al., Oral nitric oxide during plaque deposition, EUR J CL IN, 31(10), 2001, pp. 876-879
Authors:
Lombardo, S
La Magna, A
Crupi, I
Gerardi, C
Crupi, F
Citation: S. Lombardo et al., Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown, APPL PHYS L, 79(10), 2001, pp. 1522-1524
Authors:
Raineri, V
Lombardo, S
Citation: V. Raineri et S. Lombardo, Effective channel length and base width measurements by scanning capacitance microscopy, J VAC SCI B, 18(1), 2000, pp. 545-548
Authors:
Lombardo, S
Coffa, S
Bongiorno, C
Spinella, C
Castagna, E
Sciuto, A
Gerardi, C
Ferrari, F
Fazio, B
Privitera, S
Citation: S. Lombardo et al., Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2, MAT SCI E B, 69, 2000, pp. 295-298
Authors:
Crupi, F
Neri, B
Lombardo, S
Citation: F. Crupi et al., Pre-breakdown in thin SiO2 films, IEEE ELEC D, 21(6), 2000, pp. 319-321
Authors:
Lombardo, S
Mulone, G
Rionero, S
Citation: S. Lombardo et al., Global stability in the Benard problem for a mixture with superimposed plane parallel shear flows, MATH METH A, 23(16), 2000, pp. 1447-1465
Authors:
Iacona, F
Casella, G
La Via, F
Lombardo, S
Raineri, V
Spoto, G
Citation: F. Iacona et al., Structural properties of fluorinated SiO2 thin films, MICROEL ENG, 50(1-4), 2000, pp. 67-74
Authors:
Honkomp, SJ
Lombardo, S
Rosen, O
Pekny, JF
Citation: Sj. Honkomp et al., The curse of reality - why process scheduling optimization problems are difficult in practice, COMPUT CH E, 24(2-7), 2000, pp. 323-328
Authors:
Crupi, F
Iannaccone, G
Neri, B
Ciofi, C
Lombardo, S
Citation: F. Crupi et al., Short noise partial suppression in the SILC regime, MICROEL REL, 40(8-10), 2000, pp. 1605-1608
Authors:
Gerardi, C
Melanotte, M
Lombardo, S
Alessandri, M
Crivelli, B
Zonca, R
Citation: C. Gerardi et al., Effects of nitridation by nitric oxide on the leakage current of thin SiO2gate oxides, J APPL PHYS, 87(1), 2000, pp. 498-501
Authors:
Iannaccone, G
Crupi, F
Neri, B
Lombardo, S
Citation: G. Iannaccone et al., Suppressed shot noise in trap-assisted tunneling of metal-oxide-semiconductor capacitors, APPL PHYS L, 77(18), 2000, pp. 2876-2878
Authors:
Lombardo, S
Crupi, F
Spinella, C
Neri, B
Citation: S. Lombardo et al., Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors, MAT SC S PR, 2(4), 1999, pp. 359-367
Authors:
Lombardo, S
Eberly, V
Citation: S. Lombardo et V. Eberly, Meniscal cyst formation after all-inside meniscal repair, AM J SP MED, 27(5), 1999, pp. 666-667
Authors:
Capellini, G
Di Gaspare, L
Evangelisti, F
Palange, E
Notargiacomo, A
Spinella, C
Lombardo, S
Citation: G. Capellini et al., Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition, SEMIC SCI T, 14(6), 1999, pp. L21-L23
Authors:
Lombardo, S
Spinella, C
Campisano, SU
Pinto, A
Ward, P
Citation: S. Lombardo et al., Si/GexSi1-x heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width, NUCL INST B, 147(1-4), 1999, pp. 56-61
Authors:
Lombardo, S
La Magna, A
Spinella, C
Gerardi, C
Crupi, F
Citation: S. Lombardo et al., Degradation and hard breakdown transient of thin gate oxides in metal-SiO2-Si capacitors: Dependence on oxide thickness, J APPL PHYS, 86(11), 1999, pp. 6382-6391
Authors:
Lombardo, S
La Magna, A
Gerardi, C
Alessandri, M
Crupi, F
Citation: S. Lombardo et al., Soft breakdown of gate oxides in metal-SiO2-Si capacitors under stress with hot electrons, APPL PHYS L, 75(8), 1999, pp. 1161-1163
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