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Results: 1-25 | 26-40
Results: 1-25/40
GAAS MOSFET USING MBE-GROWN GA2O3 (GD2O3) AS GATE OXIDE
Authors: KIM SJ PARK JW HONG M MANNAERTS JP
Citation: Sj. Kim et al., GAAS MOSFET USING MBE-GROWN GA2O3 (GD2O3) AS GATE OXIDE, IEE proceedings. Circuits, devices and systems, 145(3), 1998, pp. 162-164
STRUCTURAL-PROPERTIES OF GA2O3(GD2O3)-GAAS INTERFACES
Authors: HONG M MARCUS MA KWO J MANNAERTS JP SERGENT AM CHOU LJ HSIEH KC CHENG KY
Citation: M. Hong et al., STRUCTURAL-PROPERTIES OF GA2O3(GD2O3)-GAAS INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1395-1397
DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE
Authors: HONG M REN F KUO JM HOBSON WS KWO J MANNAERTS JP LOTHIAN JR CHEN YK
Citation: M. Hong et al., DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1398-1400
GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/
Authors: REN F KUO JM HONG M HOBSON WS LOTHIAN JR LIN J TSAI HS MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/, IEEE electron device letters, 19(8), 1998, pp. 309-311
OXIDE-GAAS INTERFACIAL ELECTRONIC-PROPERTIES CHARACTERIZED BY MODULATION SPECTROSCOPY OF PHOTOREFLECTANCE
Authors: HWANG JS WANG YC CHOU WY TYAN SL HONG M MANNAERTS JP KWO J
Citation: Js. Hwang et al., OXIDE-GAAS INTERFACIAL ELECTRONIC-PROPERTIES CHARACTERIZED BY MODULATION SPECTROSCOPY OF PHOTOREFLECTANCE, Journal of applied physics, 83(5), 1998, pp. 2857-2859
INSULATOR PASSIVATION OF IN0.2GA0.8AS-GAAS SURFACE QUANTUM-WELLS
Authors: PASSLACK M HONG M HARRIS TD MANNAERTS JP VAKHSHOORI D SCHNOES ML
Citation: M. Passlack et al., INSULATOR PASSIVATION OF IN0.2GA0.8AS-GAAS SURFACE QUANTUM-WELLS, IEEE journal of quantum electronics, 34(2), 1998, pp. 307-310
LONG-WAVELENGTH RESONANT VERTICAL-CAVITY LED PHOTODETECTOR WITH A 75-NM TUNING RANGE/
Authors: CHRISTENSON GL TRAN ATTD ZHU ZH LO YH HONG M MANNAERTS JP BHAT R
Citation: Gl. Christenson et al., LONG-WAVELENGTH RESONANT VERTICAL-CAVITY LED PHOTODETECTOR WITH A 75-NM TUNING RANGE/, IEEE photonics technology letters, 9(6), 1997, pp. 725-727
A GA2O3 PASSIVATION TECHNIQUE COMPATIBLE WITH GAAS DEVICE PROCESSING
Authors: HONG M PASSLACK M MANNAERTS JP HARRIS TD SCHNOES ML OPILA RL KRAUTTER HW
Citation: M. Hong et al., A GA2O3 PASSIVATION TECHNIQUE COMPATIBLE WITH GAAS DEVICE PROCESSING, Solid-state electronics, 41(4), 1997, pp. 643-646
DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE
Authors: REN F HONG M HOBSON WS KUO JM LOTHIAN JR MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE, Solid-state electronics, 41(11), 1997, pp. 1751-1753
NOVEL GA2O3(GD2O3) PASSIVATION TECHNIQUES TO PRODUCE LOW D-IT OXIDE-GAAS INTERFACES
Authors: HONG M MANNAERTS JP BOWER JE KWO J PASSLACK M HWANG WY TU LW
Citation: M. Hong et al., NOVEL GA2O3(GD2O3) PASSIVATION TECHNIQUES TO PRODUCE LOW D-IT OXIDE-GAAS INTERFACES, Journal of crystal growth, 175, 1997, pp. 422-427
ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS
Authors: PASSLACK M HONG M SCHUBERT EF ZYDZIK GJ MANNAERTS JP HOBSON WS HARRIS TD
Citation: M. Passlack et al., ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS, Journal of applied physics, 81(11), 1997, pp. 7647-7661
LOW D-IT, THERMODYNAMICALLY STABLE GA2O3-GAAS INTERFACES - FABRICATION, CHARACTERIZATION, AND MODELING
Authors: PASSLACK M HONG M MANNAERTS JP OPILA RL CHU SNG MORIYA N REN F KWO JR
Citation: M. Passlack et al., LOW D-IT, THERMODYNAMICALLY STABLE GA2O3-GAAS INTERFACES - FABRICATION, CHARACTERIZATION, AND MODELING, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 214-225
WET CHEMICAL AND PLASMA-ETCHING OF GA2O3(GD2O3)
Authors: REN F HONG M MANNAERTS JP LOTHIAN JR CHO AY
Citation: F. Ren et al., WET CHEMICAL AND PLASMA-ETCHING OF GA2O3(GD2O3), Journal of the Electrochemical Society, 144(9), 1997, pp. 239-241
LOW INTERFACE STATE DENSITY OXIDE-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY
Authors: HONG M PASSLACK M MANNAERTS JP KWO J CHU SNG MORIYA N HOU SY FRATELLO VJ
Citation: M. Hong et al., LOW INTERFACE STATE DENSITY OXIDE-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2297-2300
GAAS SURFACE PASSIVATION USING IN-SITU OXIDE DEPOSITION
Authors: PASSLACK M HONG M OPILA RL MANNAERTS JP KWO JR
Citation: M. Passlack et al., GAAS SURFACE PASSIVATION USING IN-SITU OXIDE DEPOSITION, Applied surface science, 104, 1996, pp. 441-447
C-V AND G-V CHARACTERIZATION OF IN-SITU FABRICATED GA2O3-GAAS INTERFACES FOR INVERSION ACCUMULATION DEVICE AND SURFACE PASSIVATION APPLICATIONS/
Authors: PASSLACK M HONG M MANNAERTS JP
Citation: M. Passlack et al., C-V AND G-V CHARACTERIZATION OF IN-SITU FABRICATED GA2O3-GAAS INTERFACES FOR INVERSION ACCUMULATION DEVICE AND SURFACE PASSIVATION APPLICATIONS/, Solid-state electronics, 39(8), 1996, pp. 1133-1136
OBSERVATION OF INVERSION-LAYERS AT GA(2)O(3)-GAAS INTERFACES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY
Authors: PASSLACK M HONG M MANNAERTS JP
Citation: M. Passlack et al., OBSERVATION OF INVERSION-LAYERS AT GA(2)O(3)-GAAS INTERFACES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Electronics Letters, 32(3), 1996, pp. 267-269
THERMODYNAMIC AND PHOTOCHEMICAL STABILITY OF LOW INTERFACE STATE DENSITY GA2O3-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY
Authors: PASSLACK M HONG MW MANNAERTS JP OPILA RL REN F
Citation: M. Passlack et al., THERMODYNAMIC AND PHOTOCHEMICAL STABILITY OF LOW INTERFACE STATE DENSITY GA2O3-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(3), 1996, pp. 302-304
QUASI-STATIC AND HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERIZATION OF GA2O3-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY
Authors: PASSLACK M HONG M MANNAERTS JP
Citation: M. Passlack et al., QUASI-STATIC AND HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERIZATION OF GA2O3-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Applied physics letters, 68(8), 1996, pp. 1099-1101
RECOMBINATION VELOCITY AT OXIDE-GAAS INTERFACES FABRICATED BY IN-SITUMOLECULAR-BEAM EPITAXY
Authors: PASSLACK M HONG M MANNAERTS JP KWO JR TU LW
Citation: M. Passlack et al., RECOMBINATION VELOCITY AT OXIDE-GAAS INTERFACES FABRICATED BY IN-SITUMOLECULAR-BEAM EPITAXY, Applied physics letters, 68(25), 1996, pp. 3605-3607
STRAIN RELAXATION IN FE-3(AL,SI) GAAS - AN X-RAY-SCATTERING STUDY/
Authors: NOH DY HWU Y JE JH HONG M MANNAERTS JP
Citation: Dy. Noh et al., STRAIN RELAXATION IN FE-3(AL,SI) GAAS - AN X-RAY-SCATTERING STUDY/, Applied physics letters, 68(11), 1996, pp. 1528-1530
LOW-RESISTIVITY VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING SINUSOIDAL-COMPOSITION GRADING IN MIRRORS ANDIN-SITU NONALLOYED OHMIC CONTACTS
Authors: HONG M VAKHSHOORI D MANNAERTS JP HSIEH YF
Citation: M. Hong et al., LOW-RESISTIVITY VERTICAL-CAVITY SURFACE-EMITTING LASERS GROWN BY MOLECULAR-BEAM EPITAXY USING SINUSOIDAL-COMPOSITION GRADING IN MIRRORS ANDIN-SITU NONALLOYED OHMIC CONTACTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 758-761
COHERENT OSCILLATIONS IN SEMICONDUCTOR MICROCAVITIES
Authors: WANG HL SHAH J DAMEN TC JAN WY CUNNINGHAM JE HONG M MANNAERTS JP
Citation: Hl. Wang et al., COHERENT OSCILLATIONS IN SEMICONDUCTOR MICROCAVITIES, Physical review. B, Condensed matter, 51(20), 1995, pp. 14713-14716
CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERIZATION OF ALXGA1-XAS-GAAS STRUCTURES
Authors: PASSLACK M HONG M MANNAERTS JP CHIU TH MENDONCA CA CENTANNI JC
Citation: M. Passlack et al., CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERIZATION OF ALXGA1-XAS-GAAS STRUCTURES, Journal of applied physics, 78(12), 1995, pp. 7091-7098
DEMONSTRATION OF AN ISOLATED BURIED-CHANNEL FIELD-EFFECT TRANSISTOR FABRICATED VIA IN-SITU PATTERNED ELECTRON-BEAM DEPOSITION OF SI IN GAAS
Authors: MILLS AP HONG M MANNAERTS JP PFEIFFER LN WEST KW MARTIN S RUEL RR BALDWIN KW ROWE JE
Citation: Ap. Mills et al., DEMONSTRATION OF AN ISOLATED BURIED-CHANNEL FIELD-EFFECT TRANSISTOR FABRICATED VIA IN-SITU PATTERNED ELECTRON-BEAM DEPOSITION OF SI IN GAAS, Journal of applied physics, 78(10), 1995, pp. 6039-6041
Risultati: 1-25 | 26-40