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Results: 1-18 |
Results: 18

Authors: NICOLETT AS MARTINO JA SIMOEN E CLAEYS C
Citation: As. Nicolett et al., BACK GATE VOLTAGE AND BURIED-OXIDE THICKNESS INFLUENCES ON THE SERIESRESISTANCE OF FULLY DEPLETED SOI MOSFETS AT 77 K, Journal de physique. IV, 8(P3), 1998, pp. 25-28

Authors: PAVANELLO MA MARTINO JA
Citation: Ma. Pavanello et Ja. Martino, A NEW METHOD TO EXTRACT THE EFFECTIVE TRAP DENSITY AT THE BURIED OXIDE UNDERLYING SUBSTRATE INTERFACE IN ENHANCEMENT-MODE SOI MOSFETS AT LOW-TEMPERATURES, Journal de physique. IV, 8(P3), 1998, pp. 45-48

Authors: PAVANELLO MA NICOLETT AS MARTINO JA
Citation: Ma. Pavanello et al., ANALYSIS OF THE SUBSTRATE EFFECT ON ENHANCEMENT-MODE SOI NMOSFET EFFECTIVE CHANNEL-LENGTH AND SERIES RESISTANCE EXTRACTION AT 77 K, Journal de physique. IV, 8(P3), 1998, pp. 49-52

Authors: NOECKER LA MARTINO JA FOLEY PJ RUSH DM GIULIANO RM VILLANI FJ
Citation: La. Noecker et al., SYNTHESIS OF AMICETOSE BY 3 ENANTIOSELECTIVE METHODS, Tetrahedron : asymmetry, 9(2), 1998, pp. 203-212

Authors: MARTINO JA OLSON WK
Citation: Ja. Martino et Wk. Olson, MODELING CHAIN FOLDING IN PROTEIN-CONSTRAINED CIRCULAR DNA, Biophysical journal, 74(5), 1998, pp. 2491-2500

Authors: PAVANELLO MA MARTINO JA COLINGE JP
Citation: Ma. Pavanello et al., ANALYTICAL MODELING OF THE SUBSTRATE EFFECT ON ACCUMULATION-MODE SOI PMOSFETS AT ROOM-TEMPERATURE AND AT 77 K, Microelectronic engineering, 36(1-4), 1997, pp. 375-378

Authors: PAVANELLO MA MARTINO JA COLINGE JP
Citation: Ma. Pavanello et al., ANALYTICAL MODELING OF THE SUBSTRATE INFLUENCES ON ACCUMULATION-MODE SOI PMOSFETS AT ROOM-TEMPERATURE AND AT LIQUID-NITROGEN TEMPERATURE, Solid-state electronics, 41(9), 1997, pp. 1241-1246

Authors: PAVANELLO MA MARTINO JA COLINGE JP
Citation: Ma. Pavanello et al., SUBSTRATE INFLUENCES ON FULLY DEPLETED ENHANCEMENT-MODE SOI MOSFETS AT ROOM-TEMPERATURE AND AT 77 K, Solid-state electronics, 41(1), 1997, pp. 111-119

Authors: MARTINO JA
Citation: Ja. Martino, 'WITHOUT A SPECIAL OBJECT OF WORSHIP' - AN INTERACTIVE BOOK-ARTS COMPUTER INSTALLATION, Leonardo, 30(1), 1997, pp. 11

Authors: MARTINO JA OLSON WK
Citation: Ja. Martino et Wk. Olson, MODELING PROTEIN-INDUCED CONFIGURATIONAL CHANGES IN DNA MINICIRCLES, Biopolymers, 41(4), 1997, pp. 419-430

Authors: SIMOEN E CLAEYS C MARTINO JA
Citation: E. Simoen et al., PARAMETER EXTRACTION OF MOSFETS OPERATED AT LOW-TEMPERATURE, Journal de physique. IV, 6(C3), 1996, pp. 29-42

Authors: NICOLETT AS MARTINO JA SIMOEN E CLAEYS C
Citation: As. Nicolett et al., MOBILITY DEGRADATION INFLUENCE ON THE SOI MOSFET CHANNEL-LENGTH EXTRACTION AT 77 K, Journal de physique. IV, 6(C3), 1996, pp. 55-59

Authors: PAVANELLO MA MARTINO JA COLINGE JP
Citation: Ma. Pavanello et al., THEORETICAL AND EXPERIMENTAL-STUDY OF THE SUBSTRATE EFFECT ON THE FULLY DEPLETED SOI MOSFET AT LOW-TEMPERATURES, Journal de physique. IV, 6(C3), 1996, pp. 67-72

Authors: OLSON WK BABCOCK MS GORIN A LIU GH MARKY NL MARTINO JA PEDERSEN SC SRINIVASAN AR TOBIAS I WESTCOTT TP ZHANG PS
Citation: Wk. Olson et al., FLEXING AND FOLDING DOUBLE-HELICAL DNA (VOL 55, PG 7, 1995), Biophysical chemistry, 60(3), 1996, pp. 155-155

Authors: OLSON WK BABCOCK MS GORIN A LIU GH MARKY NL MARTINO JA PEDERSEN SC SRINIVASAN AR TOBIAS I WESTCOTT TP ZHANG PS
Citation: Wk. Olson et al., FLEXING AND FOLDING DOUBLE-HELICAL DNA, Biophysical chemistry, 55(1-2), 1995, pp. 7-29

Authors: MARTINO JA SIMOEN E CLAEYS C
Citation: Ja. Martino et al., A NEW METHOD FOR DETERMINING THE FRONT AND BACK INTERFACE-TRAP DENSITIES OF ACCUMULATION-MODE SOI MOSFETS AT 77 K, Solid-state electronics, 38(10), 1995, pp. 1799-1803

Authors: MARTINO JA ROTONDARO ALP SIMOEN E MAGNUSSON U CLAEYS C
Citation: Ja. Martino et al., TRANSIENT EFFECTS IN ACCUMULATION-MODE P-CHANNEL SOI MOSFETS OPERATING AT 77-K, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 519-523

Authors: MARTINO JA SIMOEN E MAGNUSSON U ROTONDARO ALP CLAEYS C
Citation: Ja. Martino et al., SIMPLE METHOD FOR THE DETERMINATION OF THE INTERFACE TRAP DENSITY AT 77-K IN FULLY DEPLETED ACCUMULATION MODE SOI MOSFETS, Solid-state electronics, 36(6), 1993, pp. 827-832
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