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Results: 1-25 | 26-50 | 51-58
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MEASUREMENT OF OXIDE THICKNESS USING A VARIABLE-ENERGY POSITRON BEAM
Authors: LEUNG TC SIMPSON PJ ATKINSON A MITCHELL IV SCHULTZ PJ
Citation: Tc. Leung et al., MEASUREMENT OF OXIDE THICKNESS USING A VARIABLE-ENERGY POSITRON BEAM, Applied surface science, 85(1-4), 1995, pp. 292-294
CHARACTERIZATION OF SI(100) SPUTTERED WITH LOW-ENERGY ARGON
Authors: HUANG LJ LAU WM MITCHELL IV TANG HT LENNARD WN
Citation: Lj. Huang et al., CHARACTERIZATION OF SI(100) SPUTTERED WITH LOW-ENERGY ARGON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 34-37
SECONDARY DEFECT FORMATION IN SELF-ION IRRADIATED SILICON
Authors: GOLDBERG RD SIMPSON TW MITCHELL IV SIMPSON PJ PRIKRYL M WEATHERLY GC
Citation: Rd. Goldberg et al., SECONDARY DEFECT FORMATION IN SELF-ION IRRADIATED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 216-221
ION-IMPLANTATION DAMAGE OF INP AND INGAAS
Authors: AKANO UG MITCHELL IV SHEPHERD FR MINER CJ
Citation: Ug. Akano et al., ION-IMPLANTATION DAMAGE OF INP AND INGAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 308-312
BANDGAP TUNING OF SEMICONDUCTOR QUANTUM-WELL LASER STRUCTURES USING HIGH-ENERGY ION-IMPLANTATION
Authors: CHARBONNEAU S POOLE PJ PIVA PG BUCHANAN M GOLDBERG RD MITCHELL IV
Citation: S. Charbonneau et al., BANDGAP TUNING OF SEMICONDUCTOR QUANTUM-WELL LASER STRUCTURES USING HIGH-ENERGY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 457-460
BORON DEPTH PROFILING IN A DELTA-DOPED SI LAYER
Authors: HUANG MB HUANG LJ MITCHELL IV LENNARD WN LAU WM NOEL JP
Citation: Mb. Huang et al., BORON DEPTH PROFILING IN A DELTA-DOPED SI LAYER, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(1), 1995, pp. 149-154
HIGH DEPTH RESOLUTION RUTHERFORD SCATTERING USING FORWARD ANGLES
Authors: ENDISCH D LOVE D SIMPSON TW MITCHELL IV BARIBEAU JM
Citation: D. Endisch et al., HIGH DEPTH RESOLUTION RUTHERFORD SCATTERING USING FORWARD ANGLES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 100(1), 1995, pp. 159-164
A STRUCTURAL STUDY OF PD CU(100) SURFACE ALLOYS/
Authors: POPE TD VOS M TANG HT GRIFFITHS K MITCHELL IV NORTON PR LIU W LI YS MITCHELL KAR TIAN ZJ BLACK JE
Citation: Td. Pope et al., A STRUCTURAL STUDY OF PD CU(100) SURFACE ALLOYS/, Surface science, 337(1-2), 1995, pp. 79-91
FORMATION OF IRON OR CHROMIUM-DOPED EPITAXIAL SAPPHIRE THIN-FILMS ON SAPPHIRE SUBSTRATES
Authors: YU N WEN QZ CLARKE DR MCINTYRE PC KUNG H NASTASI M SIMPSON TW MITCHELL IV LI DQ
Citation: N. Yu et al., FORMATION OF IRON OR CHROMIUM-DOPED EPITAXIAL SAPPHIRE THIN-FILMS ON SAPPHIRE SUBSTRATES, Journal of applied physics, 78(9), 1995, pp. 5412-5421
QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION
Authors: CHARBONNEAU S POOLE PJ PIVA PG AERS GC KOTELES ES FALLAHI M HE JJ MCCAFFREY JP BUCHANAN M DION M GOLDBERG RD MITCHELL IV
Citation: S. Charbonneau et al., QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION, Journal of applied physics, 78(6), 1995, pp. 3697-3705
DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING
Authors: POOLE PJ CHARBONNEAU S AERS GC JACKMAN TE BUCHANAN M DION M GOLDBERG RD MITCHELL IV
Citation: Pj. Poole et al., DEFECT DIFFUSION IN ION-IMPLANTED ALGAAS AND INP - CONSEQUENCES FOR QUANTUM-WELL INTERMIXING, Journal of applied physics, 78(4), 1995, pp. 2367-2371
DOPING EFFECTS ON THE KINETICS OF SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHOUS ALUMINA THIN-FILMS ON SAPPHIRE
Authors: YU N SIMPSON TW MCINTYRE PC NASTASI M MITCHELL IV
Citation: N. Yu et al., DOPING EFFECTS ON THE KINETICS OF SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHOUS ALUMINA THIN-FILMS ON SAPPHIRE, Applied physics letters, 67(7), 1995, pp. 924-926
BAND-GAP TUNING OF INGAAS INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION/
Authors: CHARBONNEAU S POOLE PJ FENG Y AERS GC DION M DAVIES M GOLDBERG RD MITCHELL IV
Citation: S. Charbonneau et al., BAND-GAP TUNING OF INGAAS INGAASP/INP LASER USING HIGH-ENERGY ION-IMPLANTATION/, Applied physics letters, 67(20), 1995, pp. 2954-2956
SUPPRESSION OF DISLOCATION FORMATION IN SILICON BY CARBON IMPLANTATION
Authors: SIMPSON TW GOLDBERG RD MITCHELL IV
Citation: Tw. Simpson et al., SUPPRESSION OF DISLOCATION FORMATION IN SILICON BY CARBON IMPLANTATION, Applied physics letters, 67(19), 1995, pp. 2857-2859
ANALYSIS AND REMOVAL OF IMPURITIES AND DEFECTS IN REACTIVE ION ETCHEDSILICON USING A NOVEL DEPTH-PROFILING TECHNIQUE
Authors: CHANG WH HUANG LJ LAU WM MITCHELL IV ABRAHAM T KING M
Citation: Wh. Chang et al., ANALYSIS AND REMOVAL OF IMPURITIES AND DEFECTS IN REACTIVE ION ETCHEDSILICON USING A NOVEL DEPTH-PROFILING TECHNIQUE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2357-2362
DETAILS OF THE DAMAGE PROFILE IN SELF-ION-IMPLANTED SILICON
Authors: ZHANG PX MITCHELL IV SCHULTZ PJ LOCKWOOD DJ
Citation: Px. Zhang et al., DETAILS OF THE DAMAGE PROFILE IN SELF-ION-IMPLANTED SILICON, Journal of Raman spectroscopy, 25(7-8), 1994, pp. 515-520
TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF THE AMORPHOUS-TO-GAMMA ANDGAMMA-TO-ALPHA PHASE-TRANSITIONS IN ION-IMPLANTED AL2O3
Authors: MCCALLUM JC SIMPSON TW MITCHELL IV
Citation: Jc. Mccallum et al., TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF THE AMORPHOUS-TO-GAMMA ANDGAMMA-TO-ALPHA PHASE-TRANSITIONS IN ION-IMPLANTED AL2O3, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 91(1-4), 1994, pp. 60-62
CLOSE ENCOUNTER PROCESSES IN MONTE-CARLO SIMULATIONS OF ION CHANNELING
Authors: DYGO A LENNARD WN MITCHELL IV
Citation: A. Dygo et al., CLOSE ENCOUNTER PROCESSES IN MONTE-CARLO SIMULATIONS OF ION CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 142-149
AZIMUTHALLY AVERAGED BACKSCATTERING YIELD NEAR THE (100) AXIS IN SI
Authors: DYGO A LENNARD WN MITCHELL IV SMULDERS PJM
Citation: A. Dygo et al., AZIMUTHALLY AVERAGED BACKSCATTERING YIELD NEAR THE (100) AXIS IN SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 161-165
MEASUREMENTS OF THIN OXIDE-FILMS OF SIO2 SI(100)/
Authors: LENNARD WN MASSOUMI GR MITCHELL IV TANG HT MITCHELL DF BARDWELL JA
Citation: Wn. Lennard et al., MEASUREMENTS OF THIN OXIDE-FILMS OF SIO2 SI(100)/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 42-46
RANDOM SPECTRUM FOR THE CHANNELING-BACKSCATTERING TECHNIQUE - A ROTATING AXIAL-DIP STUDY
Authors: DYGO A LENNARD WN MITCHELL IV SMULDERS PJM
Citation: A. Dygo et al., RANDOM SPECTRUM FOR THE CHANNELING-BACKSCATTERING TECHNIQUE - A ROTATING AXIAL-DIP STUDY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(1), 1994, pp. 23-30
NEAR-SURFACE STRUCTURE OF LOW-ENERGY-ARGON-BOMBARDED SI(100)
Authors: HUANG LJ LAU WM TANG HT LENNARD WN MITCHELL IV SCHULTZ PJ KASRAI M
Citation: Lj. Huang et al., NEAR-SURFACE STRUCTURE OF LOW-ENERGY-ARGON-BOMBARDED SI(100), Physical review. B, Condensed matter, 50(24), 1994, pp. 18453-18468
DEPTH-DEPENDENT DISORDERING IN ALPHA-SI PRODUCED BY SELF-ION-IMPLANTATION
Authors: ZHANG PX MITCHELL IV TONG BY SCHULTZ PJ LOCKWOOD DJ
Citation: Px. Zhang et al., DEPTH-DEPENDENT DISORDERING IN ALPHA-SI PRODUCED BY SELF-ION-IMPLANTATION, Physical review. B, Condensed matter, 50(23), 1994, pp. 17080-17084
FILM THICKNESS MEASUREMENTS OF SIO2 BY XPS
Authors: MITCHELL DF CLARK KB BARDWELL JA LENNARD WN MASSOUMI GR MITCHELL IV
Citation: Df. Mitchell et al., FILM THICKNESS MEASUREMENTS OF SIO2 BY XPS, Surface and interface analysis, 21(1), 1994, pp. 44-50
HYDROGEN CATALYZED CRYSTALLIZATION OF STRONTIUM-TITANATE
Authors: SIMPSON TW MITCHELL IV MCCALLUM JC BOATNER LA
Citation: Tw. Simpson et al., HYDROGEN CATALYZED CRYSTALLIZATION OF STRONTIUM-TITANATE, Journal of applied physics, 76(5), 1994, pp. 2711-2718
Risultati: 1-25 | 26-50 | 51-58