Citation: Ds. Mao et al., Vapor-phase Beckmann rearrangement of cyclohexanone oxime over modified titania-zirconia catalyst, ACT CHIM S, 59(7), 2001, pp. 1139-1144
Citation: Ds. Mao et al., Diamond-like carbon films prepared by filtered are deposition for electronfield emission application, SURF COAT, 137(1), 2001, pp. 1-5
Authors:
Mao, DS
Wang, X
Li, W
Liu, XH
Li, Q
Xu, JF
Okano, K
Citation: Ds. Mao et al., Electron field emission from a patterned diamond-like carbon flat thin film using a Ti interfacial layer, J VAC SCI B, 18(5), 2000, pp. 2420-2423
Authors:
Mao, DS
Li, W
Wang, X
Liu, XH
Li, Q
Xu, JF
Citation: Ds. Mao et al., Effect of annealing on electron field emission properties of hydrogen-freeamorphous carbon films, DIAM RELAT, 9(11), 2000, pp. 1876-1880
Authors:
Wang, X
Mao, DS
Li, W
Liu, XH
Kolitsch, A
Mueklich, A
Manova, D
Fukarek, W
Moeller, W
Citation: X. Wang et al., Interface engineering for covalently bonded disordered thin films: boron nitride and diamond-like carbon, SURF COAT, 131(1-3), 2000, pp. 514-519
Authors:
Fung, MK
Lai, KH
Chan, CY
Bello, I
Lee, CS
Lee, ST
Mao, DS
Wang, X
Citation: Mk. Fung et al., Mechanical properties and corrosion studies of amorphous carbon on magnetic disks prepared by ECR plasma technique, THIN SOL FI, 368(2), 2000, pp. 198-202
Authors:
Ding, XZ
Mao, DS
Tay, BK
Lau, SP
Shi, JR
Li, YJ
Sun, Z
Shi, X
Tan, HS
Zhang, FM
Liu, XH
Citation: Xz. Ding et al., Annealing effect on electron field-emission properties of diamond-like nanocomposite films, J APPL PHYS, 88(9), 2000, pp. 5087-5092
Citation: Ds. Mao et al., Effect of interface layers on electron field emission properties of amorphous diamond films, SCI CHINA E, 42(5), 1999, pp. 479-484
Citation: Ds. Mao et al., High sp(3) content hydrogen-free amorphous diamond: an excellent electron field emission material, SCI CHINA E, 42(1), 1999, pp. 71-76
Authors:
Mao, DS
Zhao, J
Wi, L
Wang, X
Liu, XH
Zhu, YK
Fan, Z
Zhou, JY
Li, Q
Xu, JF
Citation: Ds. Mao et al., Electron field emission from filtered arc deposited diamond-like carbon films using Au and Ti layers, DIAM RELAT, 8(1), 1999, pp. 52-55
Citation: J. Zhao et al., Photoluminescence properties of thermal SiO2 films implanted by silicon and nitrogen ions, NUCL INST B, 148(1-4), 1999, pp. 1002-1006
Authors:
Mao, DS
Zhao, J
Li, W
Chen, ZY
Wang, X
Liu, XH
Zhu, YK
Fan, Z
Zhou, JY
Li, Q
Xu, JF
Citation: Ds. Mao et al., Electron field emission from nitrogen-containing diamond-like carbon filmsdeposited by filtered arc deposition, MATER LETT, 41(3), 1999, pp. 117-121
Citation: J. Zhao et al., Efficient Si-based light-emitting materials fabricated by Si- and N-coimplanted SiO2 films, MATER LETT, 40(2), 1999, pp. 78-82
Citation: J. Zhao et al., Different luminescent properties of C+-implanted SiO2 films grown by thermal oxidation and PECVD, MATER LETT, 38(5), 1999, pp. 321-325
Authors:
Mao, DS
Zhao, J
Li, W
Wang, X
Liu, XH
Zhu, YK
Fan, Z
Zhou, JY
Li, Q
Xu, JF
Citation: Ds. Mao et al., Enhanced electron field emission properties of diamond-like carbon films using a titanium intermediate layer, J PHYS D, 32(14), 1999, pp. 1570-1577
Citation: J. Zhao et al., Short-wavelength photoluminescence from silicon and nitrogen coimplanted SiO2 films, APPL PHYS L, 74(10), 1999, pp. 1403-1405