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Results: 1-12 |
Results: 12
Light emitting diodes for the spectral range lambda=3.3-4.3 mu m fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20-180 degrees C (Part 2)
Authors: Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation: M. Aidaraliev et al., Light emitting diodes for the spectral range lambda=3.3-4.3 mu m fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20-180 degrees C (Part 2), SEMICONDUCT, 35(5), 2001, pp. 598-604
Negative luminescence in p-InAsSbP/n-InAs diodes
Authors: Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation: M. Aidaraliev et al., Negative luminescence in p-InAsSbP/n-InAs diodes, SEMICONDUCT, 35(3), 2001, pp. 321-324
Optically pumped mid-infrared InGaAs(Sb) LEDs
Authors: Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN Shustov, VV
Citation: Nv. Zotova et al., Optically pumped mid-infrared InGaAs(Sb) LEDs, SEMICONDUCT, 35(3), 2001, pp. 357-359
Radiative recombination via direct optical transitions in In1-xGaxAs (0 <=x <= 0.16) solid solutions
Authors: Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation: M. Aidaraliev et al., Radiative recombination via direct optical transitions in In1-xGaxAs (0 <=x <= 0.16) solid solutions, SEMICONDUCT, 35(12), 2001, pp. 1369-1371
High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.3 mu m)
Authors: Aydaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation: M. Aydaraliev et al., High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.3 mu m), SEMICONDUCT, 35(10), 2001, pp. 1208-1212
InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.0-3.3 mu m) for diode laser spectroscopy
Authors: Aidaraliev, M Beyer, T Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation: M. Aidaraliev et al., InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.0-3.3 mu m) for diode laser spectroscopy, SEMICONDUCT, 34(7), 2000, pp. 848-852
Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (lambda=3.0-3.6 mu m)
Authors: Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN Beyer, T Brunner, R
Citation: M. Aidaraliev et al., Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (lambda=3.0-3.6 mu m), SEMICONDUCT, 34(4), 2000, pp. 488-492
Light emitting diodes for the spectral range of lambda=3.3-4.3 mu m fabricated from the InGaAs- and InAsSbP-based solid solutions: Electroluminescence in the temperature range of 20-180 degrees C
Authors: Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus, NM Talalakin, GN
Citation: M. Aidaraliev et al., Light emitting diodes for the spectral range of lambda=3.3-4.3 mu m fabricated from the InGaAs- and InAsSbP-based solid solutions: Electroluminescence in the temperature range of 20-180 degrees C, SEMICONDUCT, 34(1), 2000, pp. 104-107
Si-Te acousto-optic modulator for the 1.7-10.6 mu m IR region
Authors: Kulakova, LA Matveev, BA Melekh, BT
Citation: La. Kulakova et al., Si-Te acousto-optic modulator for the 1.7-10.6 mu m IR region, J NON-CRYST, 266, 2000, pp. 969-972
Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval lambda=3-5 mu m
Authors: Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation: Nv. Zotova et al., Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval lambda=3-5 mu m, SEMICONDUCT, 33(8), 1999, pp. 920-923
Gain and internal losses in InGaAsSb InAsSbP double-heterostructure lasers
Authors: Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus', NM Talalakin, GN
Citation: M. Aidaraliev et al., Gain and internal losses in InGaAsSb InAsSbP double-heterostructure lasers, SEMICONDUCT, 33(6), 1999, pp. 700-703
Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operatingin the 3.0 to 3.6-mu m spectral range
Authors: Aidaraliev, M Zotova, NV Karandashev, SA Matveev, BA Remennyi, MA Stus, NM Talalakin, GN
Citation: M. Aidaraliev et al., Mechanisms of radiative recombination in InGaAsSb/InAsSbP lasers operatingin the 3.0 to 3.6-mu m spectral range, SEMICONDUCT, 33(2), 1999, pp. 200-205
Risultati: 1-12 |