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Results: 1-25/90
Authors:
Paskov, PP
Holtz, PO
Monemar, B
Garcia, JM
Schoenfeld, WV
Petroff, PM
Citation: Pp. Paskov et al., Excited-state magnetoluminescence of InAs/GaAs self-assembled quantum dots, JPN J A P 1, 40(3B), 2001, pp. 1998-2001
Authors:
Paskov, PP
Holtz, PO
Monemar, B
Garcia, JM
Schoenfeld, WV
Petroff, PM
Citation: Pp. Paskov et al., Optical up-conversion processes in InAs quantum dots, JPN J A P 1, 40(3B), 2001, pp. 2080-2083
Authors:
Toropov, AA
Sorokin, SV
Kuritsyn, KA
Ivanov, SV
Pozina, G
Bergman, JP
Wagner, M
Chen, WM
Monemar, B
Waag, A
Yakovlev, DR
Sas, C
Ossau, W
Landwehr, G
Citation: Aa. Toropov et al., Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures, PHYSICA E, 10(1-3), 2001, pp. 362-367
Authors:
Buyanova, IA
Chen, WM
Monemar, B
Citation: Ia. Buyanova et al., Electronic properties of Ga(In)NAs alloys, MRS I J N S, 6(2), 2001, pp. 1-19
Authors:
Goldys, EM
Godlewski, M
Paskova, T
Pozina, G
Monemar, B
Citation: Em. Goldys et al., Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN, MRS I J N S, 6(1), 2001, pp. 1-6
Authors:
Monemar, B
Citation: B. Monemar, Bound excitons in GaN, J PHYS-COND, 13(32), 2001, pp. 7011-7026
Authors:
Valcheva, E
Paskova, T
Abrashev, MV
Persson, PAO
Paskov, PP
Goldys, EM
Beccard, R
Heuken, M
Monemar, B
Citation: E. Valcheva et al., Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 35-38
Authors:
Pozina, G
Bergman, JP
Monemar, B
Yamaguchi, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., Time-resolved optical properties of GaN grown by metalorganic vapor phase epitaxy with indium surfactant, MAT SCI E B, 82(1-3), 2001, pp. 137-139
Authors:
Buyanova, IA
Chen, WM
Pozina, G
Hai, PN
Monemar, B
Xin, HP
Tu, CW
Citation: Ia. Buyanova et al., Optical properties of GaNAs/GaAs structures, MAT SCI E B, 82(1-3), 2001, pp. 143-147
Authors:
Hai, PN
Chen, WM
Buyanova, IA
Monemar, B
Xin, HP
Tu, CW
Citation: Pn. Hai et al., Properties of GaAsN/GaAs quantum wells studied by optical detection of cyclotron resonance, MAT SCI E B, 82(1-3), 2001, pp. 218-220
Authors:
Karlsson, KF
Moskalenko, ES
Holtz, PO
Monemar, B
Schoenfeld, WV
Garcia, JM
Petroff, PM
Citation: Kf. Karlsson et al., Carrier diffusion in the barrier enabling formation of charged excitons inInAs/GaAs quantum dots, ACT PHY P A, 100(3), 2001, pp. 387-395
Authors:
Monemar, B
Paskov, PP
Pozina, G
Paskova, T
Bergman, JP
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: B. Monemar et al., Optical characterization of InGaN/GaN MQW structures without in phase separation, PHYS ST S-B, 228(1), 2001, pp. 157-160
Authors:
Paskov, PP
Paskova, T
Holtz, PO
Monemar, B
Citation: Pp. Paskov et al., Spin-exchange splitting of excitons in GaN - art. no. 115201, PHYS REV B, 6411(11), 2001, pp. 5201
Authors:
Ivanov, IG
Egilsson, T
Henry, A
Monemar, B
Janzen, E
Citation: Ig. Ivanov et al., Resonant sharp hot free-exciton luminescence in 6H-and 4H-SiC due to inhibited exciton-phonon interaction - art. no. 085203, PHYS REV B, 6408(8), 2001, pp. 5203
Authors:
Moskalenko, ES
Karlsson, KF
Holtz, PO
Monemar, B
Schoenfeld, WV
Garcia, JM
Petroff, PM
Citation: Es. Moskalenko et al., Influence of excitation energy on charged exciton formation in self-assembled InAs single quantum dots - art. no. 085302, PHYS REV B, 6408(8), 2001, pp. 5302
Authors:
Arnaudov, B
Paskova, T
Goldys, EM
Evtimova, S
Monemar, B
Citation: B. Arnaudov et al., Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN - art. no. 045213, PHYS REV B, 6404(4), 2001, pp. 5213
Authors:
Pozina, G
Edwards, NV
Bergman, JP
Monemar, B
Bremser, MD
Davis, RF
Citation: G. Pozina et al., Time-resolved photoluminescence in strained GaN layers, PHYS ST S-A, 183(1), 2001, pp. 151-155
Authors:
Paskova, T
Paskov, PP
Darakchieva, V
Tungasmita, S
Birch, J
Monemar, B
Citation: T. Paskova et al., Defect reduction in HVPE growth of GaN and related optical spectra, PHYS ST S-A, 183(1), 2001, pp. 197-203
Authors:
Ratnikov, VV
Kyutt, RN
Shubina, TV
Paskova, T
Monemar, B
Citation: Vv. Ratnikov et al., Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers, J PHYS D, 34(10A), 2001, pp. A30-A34
Authors:
Paskova, T
Valcheva, E
Birch, J
Tungasmita, S
Persson, POA
Paskov, PP
Evtimova, S
Abrashev, M
Monemar, B
Citation: T. Paskova et al., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, J CRYST GR, 230(3-4), 2001, pp. 381-386
Authors:
Pozina, G
Bergman, JP
Monemar, B
Iwaya, M
Nitta, S
Amano, H
Akasaki, I
Citation: G. Pozina et al., Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport, J CRYST GR, 230(3-4), 2001, pp. 473-476
Authors:
Valcheva, E
Paskova, T
Abrashev, MV
Paskov, PP
Persson, POA
Goldys, EM
Beccard, R
Heuken, M
Monemar, B
Citation: E. Valcheva et al., Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J APPL PHYS, 90(12), 2001, pp. 6011-6016
Authors:
Pozina, G
Edwards, NV
Bergman, JP
Paskova, T
Monemar, B
Bremser, MD
Davis, RF
Citation: G. Pozina et al., Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(8), 2001, pp. 1062-1064
Authors:
Paskova, T
Goldys, EM
Paskov, PP
Wahab, Q
Wilzen, L
de Jong, MP
Monemar, B
Citation: T. Paskova et al., Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN, APPL PHYS L, 78(26), 2001, pp. 4130-4132
Authors:
Karlsson, KF
Moskalenko, ES
Holtz, PO
Monemar, B
Schoenfeld, WV
Garcia, JM
Petroff, PM
Citation: Kf. Karlsson et al., Temperature influence on optical charging of self-assembled InAs/GaAs semiconductor quantum dots, APPL PHYS L, 78(19), 2001, pp. 2952-2954