ACNP - Italian Periodicals Catalogue

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Results: 1-12 |

Results: 12

SiC power DIMOS with double implanted Al/B P-well

Authors: Godignon, P Morvan, E Jorda, X Vellvehi, M Flores, D Rebollo, J

Citation: P. Godignon et al., SiC power DIMOS with double implanted Al/B P-well, MICROELEC J, 32(5-6), 2001, pp. 503-507

Dynamic latch-up in advanced LIGBT structures at high operating temperatures

Authors: Vellvehi, M Jorda, X Flores, D Morvan, E Godignon, P Rebollo, J Millan, J

Citation: M. Vellvehi et al., Dynamic latch-up in advanced LIGBT structures at high operating temperatures, MAT SCI E B, 74(1-3), 2000, pp. 304-308

Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H-SiC

Authors: Berberich, S Godignon, P Morvan, E Fonseca, L Millan, J Hartnagel, HL

Citation: S. Berberich et al., Electrical characterisation of Si3N4/SiO2 double layers on p-type 6H-SiC, MICROEL REL, 40(4-5), 2000, pp. 833-836

Mapping of 6H-SiC for implantation control

Authors: Morvan, E Godignon, P Montserrat, J Flores, D Jorda, X Vellvehi, M

Citation: E. Morvan et al., Mapping of 6H-SiC for implantation control, DIAM RELAT, 8(2-5), 1999, pp. 335-340

Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H-SiC

Authors: Campos, FJ Mestres, N Alsina, F Pascual, J Morvan, E Godignon, P Millan, J

Citation: Fj. Campos et al., Confocal micro-Raman scattering and Rutherford backscattering characterization of lattice damage in aluminum implanted 6H-SiC, DIAM RELAT, 8(2-5), 1999, pp. 357-360

Lateral spread of implanted ion distributions in 6H-SiC: simulation

Authors: Morvan, E Mestres, N Pascual, J Flores, D Vellvehi, M Rebollo, J

Citation: E. Morvan et al., Lateral spread of implanted ion distributions in 6H-SiC: simulation, MAT SCI E B, 61-2, 1999, pp. 373-377

P-N Junction creation in 6H-SiC by aluminum implantation

Authors: Ottaviani, L Locatelli, ML Planson, D Isoird, K Chante, JP Morvan, E Godignon, P

Citation: L. Ottaviani et al., P-N Junction creation in 6H-SiC by aluminum implantation, MAT SCI E B, 61-2, 1999, pp. 424-428

Electronic stopping power for Monte Carlo simulation of ion implantation into SiC

Authors: Morvan, E Godignon, P Berberich, S Vellvehi, M Millan, J

Citation: E. Morvan et al., Electronic stopping power for Monte Carlo simulation of ion implantation into SiC, NUCL INST B, 147(1-4), 1999, pp. 68-73

As-Al recoil implantation through Si3N4 barrier layer

Authors: Godignon, P Morvan, E Montserrat, J Jorda, X Flores, D Rebollo, J

Citation: P. Godignon et al., As-Al recoil implantation through Si3N4 barrier layer, NUCL INST B, 147(1-4), 1999, pp. 101-105

Aluminum multiple implantations in 6H-SiC at 300 K

Authors: Ottaviani, L Morvan, E Locatelli, ML Planson, D Godignon, P Chante, JP Senes, A

Citation: L. Ottaviani et al., Aluminum multiple implantations in 6H-SiC at 300 K, SOL ST ELEC, 43(12), 1999, pp. 2215-2223

Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC

Authors: Campos, FJ Mestres, N Pascual, J Morvan, E Godignon, P Millan, J

Citation: Fj. Campos et al., Confocal micro-Raman characterization of lattice damage in high energy aluminum implanted 6H-SiC, J APPL PHYS, 85(1), 1999, pp. 99-104

Channeling implantations of Al+ into 6H silicon carbide

Authors: Morvan, E Godignon, P Vellvehi, M Hallen, A Linnarsson, M Kuznetsov, AY

Citation: E. Morvan et al., Channeling implantations of Al+ into 6H silicon carbide, APPL PHYS L, 74(26), 1999, pp. 3990-3992

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