AAAAAA

   
Results: 1-23 |
Results: 23
RAMAN MICROPROBE ANALYSIS OF STRAINED POLYSILICON DEPOSITED LAYERS
Authors: TALAAT H NEGM S SCHAFFER HE ADAR F NASSIOPOULOS AG
Citation: H. Talaat et al., RAMAN MICROPROBE ANALYSIS OF STRAINED POLYSILICON DEPOSITED LAYERS, Applied surface science, 123, 1998, pp. 742-745
MICRO-RAMAN CHARACTERIZATION OF STRESS-DISTRIBUTION WITHIN FREE STANDING MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON MEMBRANES
Authors: SIAKAVELLAS M ANASTASSAKIS E KALTSAS G NASSIOPOULOS AG
Citation: M. Siakavellas et al., MICRO-RAMAN CHARACTERIZATION OF STRESS-DISTRIBUTION WITHIN FREE STANDING MONOCRYSTALLINE AND POLYCRYSTALLINE SILICON MEMBRANES, Microelectronic engineering, 42, 1998, pp. 469-472
HIGHLY ANISOTROPIC SILICON REACTIVE ION ETCHING FOR NANOFABRICATION USING MIXTURES OF SF6 CHF3 GASES/
Authors: GRIGOROPOULOS S GOGOLIDES E TSEREPI AD NASSIOPOULOS AG
Citation: S. Grigoropoulos et al., HIGHLY ANISOTROPIC SILICON REACTIVE ION ETCHING FOR NANOFABRICATION USING MIXTURES OF SF6 CHF3 GASES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 640-645
BULK SILICON MICROMACHINING USING POROUS SILICON SACRIFICIAL LAYERS
Authors: KALTSAS G NASSIOPOULOS AG
Citation: G. Kaltsas et Ag. Nassiopoulos, BULK SILICON MICROMACHINING USING POROUS SILICON SACRIFICIAL LAYERS, Microelectronic engineering, 35(1-4), 1997, pp. 397-400
ELECTROLUMINESCENT SOLID-STATE DEVICES BASED ON SILICON NANOWIRES, FABRICATED BY USING LITHOGRAPHY AND ETCHING TECHNIQUES
Authors: NASSIOPOULOS AG GRIGOROPOULOS S PAPADIMITRIOU D
Citation: Ag. Nassiopoulos et al., ELECTROLUMINESCENT SOLID-STATE DEVICES BASED ON SILICON NANOWIRES, FABRICATED BY USING LITHOGRAPHY AND ETCHING TECHNIQUES, Thin solid films, 297(1-2), 1997, pp. 176-178
GROWTH OF ERBIUM-SILICIDE FILMS ON (100)SILICON AS CHARACTERIZED BY ELECTRON-MICROSCOPY AND DIFFRACTION
Authors: FRANGIS N VANLANDUYT J KALTSAS G TRAVLOS A NASSIOPOULOS AG
Citation: N. Frangis et al., GROWTH OF ERBIUM-SILICIDE FILMS ON (100)SILICON AS CHARACTERIZED BY ELECTRON-MICROSCOPY AND DIFFRACTION, Journal of crystal growth, 172(1-2), 1997, pp. 175-182
HIGH CRYSTALLINE QUALITY ERBIUM SILICIDE FILMS ON (100)SILICON, GROWNIN HIGH-VACUUM
Authors: KALTSAS G TRAVLOS A NASSIOPOULOS AG FRANGIS N VANLANDUYT J
Citation: G. Kaltsas et al., HIGH CRYSTALLINE QUALITY ERBIUM SILICIDE FILMS ON (100)SILICON, GROWNIN HIGH-VACUUM, Applied surface science, 102, 1996, pp. 151-155
CHARACTERIZATION OF LIGHT-EMITTING SILICON NANOPILLARS PRODUCED BY LITHOGRAPHY AND ETCHING
Authors: GRIGOROPOULOS S NASSIOPOULOS AG TRAVLOS A PAPADIMITRIOU D KENNOU S LADAS S
Citation: S. Grigoropoulos et al., CHARACTERIZATION OF LIGHT-EMITTING SILICON NANOPILLARS PRODUCED BY LITHOGRAPHY AND ETCHING, Applied surface science, 102, 1996, pp. 377-380
ERBIUM SILICIDE FILMS ON (100) SILICON, GROWN IN HIGH-VACUUM - FABRICATION AND PROPERTIES
Authors: KALTSAS G TRAVLOS A SALAMOURAS N NASSIOPOULOS AG REVVA P TRAVERSE A
Citation: G. Kaltsas et al., ERBIUM SILICIDE FILMS ON (100) SILICON, GROWN IN HIGH-VACUUM - FABRICATION AND PROPERTIES, Thin solid films, 275(1-2), 1996, pp. 87-90
NEW ERBIUM SILICIDE SUPERSTRUCTURES - A STUDY BY HIGH-RESOLUTION ELECTRON-MICROSCOPY
Authors: FRANGIS N VANTENDELOO G VANLANDUYT J KALTSAS G TRAVLOS A NASSIOPOULOS AG
Citation: N. Frangis et al., NEW ERBIUM SILICIDE SUPERSTRUCTURES - A STUDY BY HIGH-RESOLUTION ELECTRON-MICROSCOPY, Physica status solidi. a, Applied research, 158(1), 1996, pp. 107-116
APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION IN THE THICKNESS DETERMINATION OF THIN-FILMS
Authors: KALTSAS G GLEZOS N VALAMONTES E NASSIOPOULOS AG
Citation: G. Kaltsas et al., APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION IN THE THICKNESS DETERMINATION OF THIN-FILMS, Mikrochimica acta, 1996, pp. 349-353
COMPARISON OF BACK-FOIL SCANNING-X-RAY MICROFLUORESCENCE AND ELECTRON-PROBE X-RAY-MICROANALYSIS FOR THE ELEMENTAL CHARACTERIZATION OF THIN COATINGS
Authors: VALAMONTES E NASSIOPOULOS AG
Citation: E. Valamontes et Ag. Nassiopoulos, COMPARISON OF BACK-FOIL SCANNING-X-RAY MICROFLUORESCENCE AND ELECTRON-PROBE X-RAY-MICROANALYSIS FOR THE ELEMENTAL CHARACTERIZATION OF THIN COATINGS, Mikrochimica acta, 1996, pp. 597-603
ELECTRON-PROBE X-RAY-MICROANALYSIS OF COATINGS
Authors: VALAMONTES E NASSIOPOULOS AG
Citation: E. Valamontes et Ag. Nassiopoulos, ELECTRON-PROBE X-RAY-MICROANALYSIS OF COATINGS, Mikrochimica acta, 1996, pp. 605-610
ELECTROLUMINESCENT DEVICE BASED ON SILICON NANOPILLARS
Authors: NASSIOPOULOS AG GRIGOROPOULOS S PAPADIMITRIOU D
Citation: Ag. Nassiopoulos et al., ELECTROLUMINESCENT DEVICE BASED ON SILICON NANOPILLARS, Applied physics letters, 69(15), 1996, pp. 2267-2269
LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES
Authors: NASSIOPOULOS AG GRIGOROPOULOS S PAPADIMITRIOU D GOGOLIDES E
Citation: Ag. Nassiopoulos et al., LIGHT-EMISSION FROM SILICON NANOSTRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES, Physica status solidi. b, Basic research, 190(1), 1995, pp. 91-95
HIGHLY ANISOTROPIC ROOM-TEMPERATURE SUB-HALF-MICRON SI REACTIVE ION ETCHING USING FLUORINE ONLY CONTAINING GASES
Authors: GOGOLIDES E GRIGOROPOULOS S NASSIOPOULOS AG
Citation: E. Gogolides et al., HIGHLY ANISOTROPIC ROOM-TEMPERATURE SUB-HALF-MICRON SI REACTIVE ION ETCHING USING FLUORINE ONLY CONTAINING GASES, Microelectronic engineering, 27(1-4), 1995, pp. 449-452
SUBMICROMETER LUMINESCENT POROUS SILICON STRUCTURES USING LITHOGRAPHICALLY PATTERNED SUBSTRATES
Authors: NASSIOPOULOS AG GRIGOROPOULOS S CANHAM L HALIMAOUI A BERBEZIER I GOGOLIDES E PAPADIMITRIOU D
Citation: Ag. Nassiopoulos et al., SUBMICROMETER LUMINESCENT POROUS SILICON STRUCTURES USING LITHOGRAPHICALLY PATTERNED SUBSTRATES, Thin solid films, 255(1-2), 1995, pp. 329-333
VISIBLE LUMINESCENCE FROM ONE-DIMENSIONAL AND 2-DIMENSIONAL SILICON STRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES
Authors: NASSIOPOULOS AG GRIGOROPOULOS S GOGOLIDES E PAPADIMITRIOU D
Citation: Ag. Nassiopoulos et al., VISIBLE LUMINESCENCE FROM ONE-DIMENSIONAL AND 2-DIMENSIONAL SILICON STRUCTURES PRODUCED BY CONVENTIONAL LITHOGRAPHIC AND REACTIVE ION ETCHING TECHNIQUES, Applied physics letters, 66(9), 1995, pp. 1114-1116
ROOM AND LOW-TEMPERATURE ELECTRICAL MEASUREMENTS FOR THE INTERFACE CHARACTERIZATION OF TITANIUM DISILICIDES ON SILICON FROM MULTILAYER TITANIUM-SILICON STRUCTURES
Authors: REVVA P NASSIOPOULOS AG TRAVLOS A
Citation: P. Revva et al., ROOM AND LOW-TEMPERATURE ELECTRICAL MEASUREMENTS FOR THE INTERFACE CHARACTERIZATION OF TITANIUM DISILICIDES ON SILICON FROM MULTILAYER TITANIUM-SILICON STRUCTURES, Journal de physique. IV, 4(C6), 1994, pp. 93-98
CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ-5214(TM) PHOTORESIST
Authors: GOGOLIDES E YANNAKOPOULOU K TRAVERSE A NASSIOPOULOS AG TSOIS E HATZAKIS M
Citation: E. Gogolides et al., CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ-5214(TM) PHOTORESIST, Microelectronic engineering, 25(1), 1994, pp. 75-90
TITANIUM DISILICIDE ON SILICON BY INTERDIFFUSION OF TITANIUM AND AMORPHOUS-SILICON MULTILAYERS - TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND RESISTIVITY MEASUREMENTS
Authors: NASSIOPOULOS AG TAMBOURIS D FRANGIS N LOGOTHETIDIS S GEORGA S KRONTIRAS C XANTHOPOULOS N
Citation: Ag. Nassiopoulos et al., TITANIUM DISILICIDE ON SILICON BY INTERDIFFUSION OF TITANIUM AND AMORPHOUS-SILICON MULTILAYERS - TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND RESISTIVITY MEASUREMENTS, Thin solid films, 247(1), 1994, pp. 44-50
CHARACTERIZATION OF THE TITANIUM-SILICON 2 SI INTERFACE IN TITANIUM DISILICIDE FILMS ON SILICON, FORMED BY DEPOSITION OF ALTERNATE TITANIUM-SILICON LAYERS AND ANNEALING/
Authors: REVVA P NASSIOPOULOS AG TRAVLOS A
Citation: P. Revva et al., CHARACTERIZATION OF THE TITANIUM-SILICON 2 SI INTERFACE IN TITANIUM DISILICIDE FILMS ON SILICON, FORMED BY DEPOSITION OF ALTERNATE TITANIUM-SILICON LAYERS AND ANNEALING/, Journal of applied physics, 75(9), 1994, pp. 4533-4538
CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ 5214TM PHOTORESIST
Authors: GOGOLIDES E YANNAKOPOULOU K NASSIOPOULOS AG TSOIS E HATZAKIS M
Citation: E. Gogolides et al., CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ 5214TM PHOTORESIST, Microelectronic engineering, 21(1-4), 1993, pp. 263-266
Risultati: 1-23 |