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Results: 1-25/40
Authors:
ZYKOV VA
GAVRIKOVA TA
NEMOV SA
RYKOV SA
Citation: Va. Zykov et al., DEFECT FORMATION IN THIN COMPENSATED PBSE - CL FILMS, Russian journal of applied chemistry, 71(4), 1998, pp. 543-549
Authors:
ZHITINSKAYA MK
NEMOV SA
SVECHNIKOVA TE
Citation: Mk. Zhitinskaya et al., SPECIFIC FEATURES OF BI2TE3 DOPING WITH SN, Physics of the solid state, 40(8), 1998, pp. 1297-1300
Authors:
NEMOV SA
ZHITINSKAYA MK
PARFENEV RV
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF LOW-LEVEL GE ADDITIONS ON THE SUPERCONDUCTING TRANSITION INPBTE-TL, Physics of the solid state, 40(7), 1998, pp. 1096-1097
Authors:
ZHITINSKAYA MK
NEMOV SA
RAVICH YI
Citation: Mk. Zhitinskaya et al., EFFECT OF PHONON-SCATTERING FROM NEUTRAL AND CHARGED IMPURITY CENTERSON THE LATTICE HEAT-CONDUCTIVITY OF PBTE(TL, NA), Physics of the solid state, 40(7), 1998, pp. 1098-1100
Authors:
VEIS AN
NEMOV SA
Citation: An. Veis et Sa. Nemov, OPTICAL REFLECTION IN PB0.78SN0.22TE DOPED TO 3 AT. PERCENT WITH INDIUM, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 937-938
Authors:
NEMOV SA
GAVRIKOVA TA
ZYKOV VA
OSIPOV PA
PROSHIN VI
Citation: Sa. Nemov et al., FEATURES OF THE ELECTRICAL COMPENSATION OF BISMUTH IMPURITIES IN PBSE, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 689-691
Authors:
NEMOV SA
RAVICH YI
PROSHIN VI
ABAIDULINA TG
Citation: Sa. Nemov et al., TRANSPORT PHENOMENA IN THE SOLID-SOLUTION (PB0.78SN0.22)(0.97)IN0.03TE IN THE HOPPING CONDUCTION REGION, Semiconductors, 32(3), 1998, pp. 280-283
Authors:
NEMOV SA
PROSHIN VI
NAKHMANSON SM
Citation: Sa. Nemov et al., EFFECT OF IN DOPING ON THE KINETIC COEFFICIENTS IN SOLID-SOLUTIONS OFTHE SYSTEM (PBZSN1-Z)(0.95)GE0.05TE, Semiconductors (Woodbury, N.Y.), 32(10), 1998, pp. 1062-1064
Authors:
NEMOV SA
RAVICH YI
Citation: Sa. Nemov et Yi. Ravich, THALLIUM-DOPED LEAD CHALCOGENIDES - INVESTIGATION METHODS AND PROPERTIES, Uspehi fiziceskih nauk, 168(8), 1998, pp. 817-842
Authors:
ZHITINSKAYA MK
NEMOV SA
SVECHNIKOVA TE
Citation: Mk. Zhitinskaya et al., EFFECT OF INHOMOGENEITIES OF BI2T3 CRYSTALS ON THE TRANSVERSE NERNST-ETTINGSHAUSEN EFFECT, Semiconductors, 31(4), 1997, pp. 375-377
Authors:
MASTEROV VF
NASREDINOV FS
NEMOV SA
SEREGIN PP
ERMOLAEV AV
IRKAEV SM
Citation: Vf. Masterov et al., THE ELECTRICAL-ACTIVITY OF ISOELECTRONIC GERMANIUM IMPURITIES IN LEADCHALCOGENIDES, Semiconductors, 31(3), 1997, pp. 319-320
Authors:
MASTEROV VF
NASREDINOV FS
NEMOV SA
SEREGIN PP
Citation: Vf. Masterov et al., 2-ELECTRON TIN CENTERS WITH NEGATIVE CORRELATION-ENERGY IN LEAD CHALCOGENIDES - DETERMINATION OF THE HUBBARD ENERGY, Semiconductors, 31(2), 1997, pp. 181-185
POSITION OF ANTIMONY IMPURITY ATOMS IN A PBTE LATTICE, DETERMINED BY EMISSION MOSSBAUER-SPECTROSCOPY
Authors:
MASTEROV VF
NASREDINOV FS
NEMOV SA
SEREGIN PP
TROITSKAYA NN
BONDAREVSKII SI
Citation: Vf. Masterov et al., POSITION OF ANTIMONY IMPURITY ATOMS IN A PBTE LATTICE, DETERMINED BY EMISSION MOSSBAUER-SPECTROSCOPY, Semiconductors, 31(11), 1997, pp. 1138-1139
Authors:
NEMOV SA
PROSHIN VI
ABAIDULINA TG
Citation: Sa. Nemov et al., INFLUENCE OF QUASI-LOCAL STATES OF IN ON DEFECT FORMATION IN PBTE, Semiconductors, 30(7), 1996, pp. 676-679
Authors:
MASTEROV VF
NASREDINOV FS
NEMOV SA
SEREGIN PP
Citation: Vf. Masterov et al., IDENTIFICATION OF ONE-ELECTRON AND 2-ELECTRON IMPURITY CENTERS IN SEMICONDUCTORS BY MOSSBAUER-SPECTROSCOPY, Semiconductors, 30(5), 1996, pp. 450-455
Authors:
MASTEROV VF
NASREDINOV FS
NEMOV SA
SEREGIN PP
Citation: Vf. Masterov et al., INVESTIGATION OF ONE-ELECTRON AND 2-ELECTRON EXCHANGE BETWEEN NEUTRALAND IONIZED IMPURITY CENTERS IN SEMICONDUCTORS BY THE MOSSBAUER-SPECTROSCOPY, Semiconductors, 30(5), 1996, pp. 472-476
Authors:
ZYKOV VA
GAVRIKOVA TA
NEMOV SA
Citation: Va. Zykov et al., CHARACTERISTICS OF SELF-COMPENSATION IN PBSE-CL-SE-EX FILMS, Semiconductors, 30(4), 1996, pp. 386-388
Authors:
NEMOV SA
MUSIKHIN SF
PROSHIN VI
Citation: Sa. Nemov et al., EFFECT OF IN ADDITIONS ON THE ELECTRICAL-PROPERTIES OF SN0.8GE(0.2)TETHIN-FILMS OBTAINED BY LASER SPUTTERING, Semiconductors, 30(2), 1996, pp. 179-180
Authors:
NEMOV SA
PROSHIN VI
RAVICH YI
Citation: Sa. Nemov et al., THERMOELECTRIC-POWER AND ACTIVATION-ENERGY FOR HOPPING CONDUCTIVITY IN PB0.78SN0.22TE SOLID-SOLUTIONS WITH HIGH IN CONTENT, Semiconductors, 30(12), 1996, pp. 1128-1129
Authors:
ABAIDULINA TG
NEMOV SA
PROSHIN VI
RAVICH YI
Citation: Tg. Abaidulina et al., SEEBECK COEFFICIENT AND ELECTRON-ENERGY BAND IN (PB0.78SN0.22)(0.97)IN0.03TE SOLID-SOLUTIONS WITH ADDITIONAL DOPING IN THE RANGE OF THE HOPPING CONDUCTIVITY, Semiconductors, 30(12), 1996, pp. 1133-1134
Authors:
NEMOV SA
NASREDINOV FS
PARFENEV RV
RAVICH YI
CHERNYAEV AV
SHAMSHUR DV
Citation: Sa. Nemov et al., IMPURE ELECTRON-STATES OF TL AND SN ATOMS IN (PBTE)(0.9)(PBS)(0.1) SOLID-SOLUTION, Fizika tverdogo tela, 38(5), 1996, pp. 1586-1591
Authors:
NEMOV SA
NASREDINOV FS
PARFENEV RV
ZHITINSKAYA MK
CHERNYAEV AV
SHAMSHUR DV
Citation: Sa. Nemov et al., EFFECT OF SN IMPURITIES ON ELECTROPHYSICA L PROPERTIES AND SUPERCONDUCTING TRANSITIONS IN (PBTE)(0.95)(PBS)(0.05)TL, Fizika tverdogo tela, 38(2), 1996, pp. 550-557
Authors:
MASTEROV VF
NASREDINOV FS
NEMOV SA
SEREGIN PP
IRKAEV SM
MELEKH BT
TROITSKAYA NN
Citation: Vf. Masterov et al., NONSTANDARD STATES OF TIN ATOMS IN MIXED SILVER AND TIN CHALCOGENIDESWITH NACL STRUCTURE, Fizika tverdogo tela, 38(11), 1996, pp. 3308-3311
Authors:
MASTEROV VF
NASREDINOV FS
NEMOV SA
SEREGIN PP
Citation: Vf. Masterov et al., LOCAL SYMMETRY OF PB1-XSNXTE LATTICES IN NON-APERTURE STATE, Fizika tverdogo tela, 38(10), 1996, pp. 2973-2977
Authors:
NEMOV SA
PARFENIEV RV
SHAMSHUR DV
SAFONCHIK MO
STEPIENDAMM J
Citation: Sa. Nemov et al., SUPERCONDUCTIVITY IN THE PBTE-SNTE-GETE SYSTEM WITH IN AND TL QUASI-LOCAL IMPURITY STATES, Czechoslovak journal of Physics, 46, 1996, pp. 863-864